DD 127 D TRANSISTOR
Abstract: transistor DD 127 D 2N6880 2N6798 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV
Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These
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2N6796,
2N6798,
2N6800,
2N6802
MIL-PRF-19500/557
2N6798
2N67n
T4-LDS-0047,
DD 127 D TRANSISTOR
transistor DD 127 D
2N6880
2N6796
2n6796 jantx
2N6796 JANTXV
2N6802
2n6800
2N6798 JANTXV
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2N6880
Abstract: 2N6798 JANTXV
Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These
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Original
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2N6796,
2N6798,
2N6800,
2N6802
MIL-PRF-19500/557
2N6798
T4-LDS-0047,
2N6880
2N6798 JANTXV
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MOSFET cross-reference
Abstract: 2N6798 557h 2N6796 2N6796U 2N6798U 2N6800 2N6800U 2N6802 2N6802U
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 September 2010. MIL-PRF-19500/557H 24 June 2010 SUPERSEDING MIL-PRF-19500/557G 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/557H
MIL-PRF-19500/557G
2N6796,
2N6796U,
2N6798,
2N6798U,
2N6800,
2N6800U,
2N6802,
2N6802U
MOSFET cross-reference
2N6798
557h
2N6796
2N6796U
2N6798U
2N6800
2N6800U
2N6802
2N6802U
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2N6796
Abstract: 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 09 March 1998 INCH-POUND MIL-PRF-19500/557F 09 December 1997 SUPERSEDING MIL-S-19500/557E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/557F
MIL-S-19500/557E
2N6796,
2N6796U,
2N6798,
2N6798U,
2N6800,
2N6800U,
2N6802,
2N6802U
2N6796
2N6796U
2N6798
2N6798U
2N6800
2N6800U
2N6802
2N6802U
c 2811 transistor
irff130 marking
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DD 127 D transistor
Abstract: 2n6798u 2N6796U
Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These
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Original
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2N6796U,
2N6798U,
2N6800U,
2N6802U
MIL-PRF-19500/557
2N6798U
O-205AF
2N6796,
2N67mensions
T4-LDS-0047-1,
DD 127 D transistor
2N6796U
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Untitled
Abstract: No abstract text available
Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These
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Original
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2N6796U,
2N6798U,
2N6800U,
2N6802U
MIL-PRF-19500/557
2N6798U
O-205AF
T4-LDS-0047-1,
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smd 662
Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Text: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254
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MO036
O-254
2N6782,
IRFF110
2N6782U,
IRFE110
smd 662
2N7422
2n7425
2N7426
2N7383
601 SMD
2N7389
IRHM9260
2N7422U
2N7219U
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1N7001
Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR
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OCR Scan
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2N6755
T0-204AA
2N6756
O-204AA
2N6757
2N6758
2N6659
O-205AF
1N7001
2N6155
4900 SIEMENS
1N7000
BUZ54
2N6759
2n6800
2N6823
BUZ211
IXTP4N90
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1RF9130
Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790
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OCR Scan
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JANTX2N6782
JANTX2N6784
JANTX2N6786
JANTX2N6788
JANTX2N6790
JANTX2N6792
JANTX2N6794
JANTX2N6796
JANTX2N6798
JANTX2N6800
1RF9130
jantx2n1800
JAN2N1793
2N6849
2N1915
2n6845
563 j 400v
JAN2N3095
T0-209AC
IRFF9120
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Untitled
Abstract: No abstract text available
Text: 4302271 0053701 m b • HAS 2N6796 2 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features TO-205AF BOTTOM VIEW • 8.0A, 100V • rDS(on = 0 .1 8 « • SOA is Power-Dissipation Limited SOURCE • Nanosecond Switching Speeds
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OCR Scan
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2N6796
O-205AF
2N6796
LH0063
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PDF
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diode by 26E
Abstract: diagram pulsa 2N6796 DIODE ON u1E
Text: 3875081 G E SOLID STATE Dll dÎF| 3fl7SDfil DD1Û41A □ I T ’ S ?-£>? sian a a ra row er M O SFET s 2N6796 File Num ber 1594 Power MOS Field-Effect Transistors p N-Channel Enhancement-Mode Power Field-Effect Transistors
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OCR Scan
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GDlfl41fl
2N6796
2N6796
diode by 26E
diagram pulsa
DIODE ON u1E
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2N6796 HARRIS
Abstract: 2n6796 jantx qpl-19500 2N6756 2N6796 diode332 2N6770 JANTX 2N6897
Text: Standard Power MOSFETs 2N6796 F ile N u m b e r 1594 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8.0A, 100V ros on = 0.18 fi Features: • SOA is po w e r-d issip ation lim ite d
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OCR Scan
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2N6796
2N6796
O-205AF
O-2I35AF
2N6800
T0-205AF
2N6796 HARRIS
2n6796 jantx
qpl-19500
2N6756
diode332
2N6770 JANTX
2N6897
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2N6796
Abstract: 2N6795
Text: POWER MOSFET TRANSISTORS 100 Volt, 0.18 Ohm N-Channel FEATURES • • • • • ITX 2N6795 JTX, JTXV 2N6796 DESCRIPTION The U nitrode power M O SFET design utilizes the m ost advan ce d technology available. This efficien t design a ch ieves a very low Rosiom and a high transconductance.
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OCR Scan
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2N6795
2N6796
2N6796
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PDF
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2N7003
Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
Text: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0
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OCR Scan
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2N6755
T0-204AA
2N6756
O-204AA
2N6757
2N6758
O-254AA
2N7003
2N7009
2N7011
2N7073
G50-12C1
2N6759
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PDF
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2N6796
Abstract: 2N6795 2N6195 2N679B 2N6196 LE17 diode 60V 8A
Text: 37E » SEMELAB LTD I 0133107 □□□□313 1 T-39-09 JAN 0 5 1988 SEM ELAB 2N 6795 2N 6796 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES P IN 1 -S o u rc e P IN 2 -G a te
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OCR Scan
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D0DD313
2N6795
2N6796
2N6795
2N6796
Tc-25
2N6195
2N679B
2N6196
LE17
diode 60V 8A
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PDF
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Untitled
Abstract: No abstract text available
Text: International sslRectifier Government and Space hexfet power m o sfets Hermetic Package N-Channel Part BV d s s Number V IRFF024 RDS(on) (Ohms) •d @ Tq = 100°C R thJC Max. Pd @ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) 60 0.15 8.0 IRFF110 100 0.60
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OCR Scan
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IRFF024
IRFF110
2N6782
JANTX2N6782
JANTXV2N6782
IRFF120
2N6788
JANTX2N6788
JANTXV2N6788
IRFF130
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PDF
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TO-254
Abstract: T0-204 IRF450 equivalent
Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS
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OCR Scan
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2N6756
2N6758
2N6760
2N6762
2N6764
2N6766
2N6768
2N6770
2N6788
2N6790
TO-254
T0-204
IRF450 equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current
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OCR Scan
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IRFF014
IRFF034
IRFF113
IRFF111
IRFF123
IRFF121
IRFF133
IRFF131
IRFF112
2N6782
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PDF
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T0220H
Abstract: 2N6795 2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T018 T046
Text: MAE D • Ö1331Ö7 00004bS 110 ■ SMLB SEMELABL SEMELAB LTD T-ir.ot MOS TRANSISTORS Type Rei 2N3824 HR 2N3824LP HR 2N4391 EEQ 2N4392 REQ 2N4393 EEQ 2N4416 REQ 2N6659 HR 2N6660 HR 2N6661 HR 2N6661-220H-■ISO HR 2N6755 REQ 2H6756 REQ REQ 2N6757 REQ 2N6758
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OCR Scan
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2N3824
2N3824LP
2N4391
2H4392
2N4393
2N4416
2N6659
2N6660
2N6661
2N6661-220H-
T0220H
2N6795
T018
T046
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PDF
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ED 83
Abstract: No abstract text available
Text: Government/ Space Products International [^Rectifier HEXFET, CECC Qualified — Europe N-Channel Types Basic Type IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 IRF320 IRF330 IRF340 IRF350 IRF420 IRF430 IRF440 IRF450 VDS V RDS(on)
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OCR Scan
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IRF044
IRF120
IRF130
IRF140
IRF150
IRF220
IRF230
IRF240
IRF250
IRF244
ED 83
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PDF
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2N6901 JANTX
Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Text: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements
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OCR Scan
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2N6901
2N6901
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6901 JANTX
2N6901 JANTXV
2N6901 JANTX harris
2n6898
transistor h44
2N6897 JANTXV
2N6897
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PDF
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2N6155
Abstract: 2n6156 qpl-19500 2N6756 2N6901 D-05N md-141 2N6755 2N67 2N6756 JANTX
Text: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 6 0 V -1 0 0 V rDs on = 0.18 fi and 0.25 fl Features: • SOA is power-dissipation limited
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OCR Scan
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2N6755,
2N6756
0V-100V
2N6755
2N6756
2N6796
O-2I35AF
O-205AF
2N6800
2N6155
2n6156
qpl-19500
2N6901
D-05N
md-141
2N67
2N6756 JANTX
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PDF
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2N6904
Abstract: L051 2N6895 QPL-19500 2N6904 JANTX 2N6901 2N6903 2N6901 JANTXV 741 terminal
Text: Logic-Level Power MOSFETs 2N6904 F ile N u m b e r 1880 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 8 A, 200 V r D s ( o n ) : 0.6 ft N-CHANNEL ENHANCEMENT MODE Features: • D e s ig n o p tim iz e d f o r 5 v o lt g a te d riv e ■ C a n b e d riv e n d ir e c tly fr o m Q -M O S ,
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OCR Scan
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2N6904
2N6904
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
L051
2N6895
QPL-19500
2N6904 JANTX
2N6901
2N6903
2N6901 JANTXV
741 terminal
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PDF
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irf630 irf640
Abstract: vd 5205 IRFZ34 E2960 2N6796 IR E2959 e2958 E2961 H13C IRF9530 international
Text: International S Rectifier Government/ Space Products HEXFET, ESA/SCC - Qualified - Europe N-Channel Types Basic Type Vd s V 2N6764 2N6766 2N6768 RDS(on) (Ohms) ESA/SCC Specification Variant Test Level issue No. Issue Date 100 200 400 0.055 0.085 0.30 5205/013
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OCR Scan
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2N6764
2N6766
2N6768
T0-204AA
2N6804
2N6806
2N6796
2N6782
2N6798
2N6784
irf630 irf640
vd 5205
IRFZ34
E2960
2N6796 IR
E2959
e2958
E2961
H13C
IRF9530 international
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PDF
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