Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SB1435 2SB1435 Silicon PNP Epitaxial Planar Type • Package Dim ensions A F Output Amplifier Unit : mm ■ Features • Low collector-em itter saturation voltage VcE(sao • High collector current (Ic) • Automatic mounting by radial taping is possible.
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2SB1435
200MHz
DDlb333
001b33M
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2SB1435
Abstract: SJD00074BED
Text: Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE sat • Large collector current IC • Allowing automatic insertion with radial taping
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2SB1435
2SB1435
SJD00074BED
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2SB1435
Abstract: No abstract text available
Text: Power Transistors 2SB1435 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC • Allowing automatic insertion with radial taping 16.0±1.0
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2SB1435
2SB1435
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2SB1435
Abstract: SJD00074BED 2SB143
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2002/95/EC)
2SB1435
2SB1435
SJD00074BED
2SB143
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2SB1435
Abstract: No abstract text available
Text: Power Transistors 2SB1435 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC • Allowing automatic insertion with radial taping 16.0±1.0
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2SB1435
2SB1435
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC
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2002/95/EC)
2SB1435
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1435 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC • Allowing automatic insertion with radial taping 16.0±1.0
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2SB1435
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC
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2002/95/EC)
2SB1435
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2SB1435
Abstract: No abstract text available
Text: Pow er T ra n sisto rs 2SB1435 2SB1435 Silicon PNP Epitaxial Planar Type Package Dimensions AF Output Amplifier U n i t : mm • Features • Low collector-em itter saturation voltage VcEisao • High collector current (Ic) • Automatic mounting by radial taping is possible.
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2SB1435
200Hz
0Dlb33M
2SB1435
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2SB1424
Abstract: 2SB1426 2SB1413 2SB1414 2SB1416 2SB1417 2SB1417A 2SB1418 2SB1418A 2SB1419
Text: - 90 - 1 I W Ta=25cC, *Ep[àTc=25‘C m 2SBH13 2SB1414 2SB1415 2SB1416 2SBH17 2SB14Ì7A 2SB1418 2SB1418A 2SB1419 2SB1421 *)CD1 A 1) 1) i.'JUL'tOL 2SB1424 2SB1426 2SB1428 2SB1430 2SB1431 2SB1432 2SB1433 2SB1434 2SB1435 2SB1437 2SB1438 2SB1439 2SB1440 2SB1446
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2SB1413
2SB1414
ZSB1415
2SB1416
2SB1417
2SB1417A
2SB1418
2SD2185
SC-59
2SB1440
2SB1424
2SB1426
2SB1414
2SB1418
2SB1418A
2SB1419
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2SB1435
Abstract: SJD00074BED
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2002/95/EC)
2SB1435
2SB1435
SJD00074BED
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2SB1435
Abstract: No abstract text available
Text: Power Transistors 2SB1435 2SB1435 Silicon PNP E p ita xia l P la n a r Type P ackage D im ensions AF Output A m p lifie r Unit I Features • Low c o llc c to r - c m ittc r s a tu r a tio n v o lta g e V c E r .tO • High c o lle c to r c u r r e n t (Ic
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2SB1435
-200mA
-50mA
200MH*
2SB1435
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 10.8±0.2 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC
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2002/95/EC)
2SB1435
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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2SB415
Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661
Text: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596
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2sb507
2sb596
2sa1069
2sb856
2sb1291
2sb508
2sb632
2SB415
sanyo 2sb509
NEC B 536
2sb631 hitachi
2SA1284
2sa966
2SB631
2SB557 TOSHIBA
2SA934
2SB661
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PDF
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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MN115P
MN116P
MN1201A
MN1201M
MN1201S
MN1202M
MN1204A
MN1204B
MN1204E
MN1204F
an6512n
mn1225
MN1280
mn6520
MN6130
MN6147C
MN12C261D
MN12C201D
MN3107
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Original
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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PDF
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3SK2411
Abstract: 2SC1215 3SK143 3SK22 3sk169 3SK247
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Appli Band cation TO-92 (D46) New S Type (D34) M Type (D35) 2SC1215 Package (No.) SS Mini Type S Mini Type S Mini Type (3 pin) (4 pin)
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2SC1215
3SK268
2SC3354
2SC4716
2SC3354
2SC2636
3SK2411
2SC1215
3SK143
3SK22
3sk169
3SK247
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PDF
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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3sk287
Abstract: 3SK139 3sk247 3SK285
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli Band cation TO-92 (D49) New S Type (D39) Cross Pack (Ceramic) (D37(a), D37(b) ) M Type (D40) SS Mini Type S Mini Type S Mini Type
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3SK144
3SK202
3SK241
3SK268
3SK286
2SC1215
2SC3354
2SC2636
3sk287
3SK139
3sk247
3SK285
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PDF
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2SB694
Abstract: Toshiba 2SB754 2Sb754 2SB927 2SA1225 2SA1243 2SA1241 2SB837B 2SA13 2SB1435
Text: 54 - « m Type No. 2SB 8.27 „ 2SB 828 2SB 830 2SB 831 2SB 833 2SS 834 «2SB 835 tt € Manuf. h n =. n B Ä B 4 S 2 * 2 T 2SB 836 2SB 837 , 2SB 837L B B B 4 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 837S 838 839 840 . 841 , 841L 841S 842 843 B B tL 2SB 2SB 2SB
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2SB754
2SA1185
2SB849
2SB1155
2SA1789
2SB927
2SB1010
2SB815
2SA1298
2SB624
2SB694
Toshiba 2SB754
2Sb754
2SB927
2SA1225
2SA1243
2SA1241
2SB837B
2SA13
2SB1435
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