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    2SB155 Search Results

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    2SB155 Price and Stock

    Sanken Electric Co Ltd 2SB1559

    TRANS PNP DARL 150V 8A TO-3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1559 Bulk 90 1
    • 1 $2.88
    • 10 $1.975
    • 100 $2.88
    • 1000 $1.11864
    • 10000 $1.11864
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    Quest Components 2SB1559 320
    • 1 $3.33
    • 10 $3.33
    • 100 $2.22
    • 1000 $2.0535
    • 10000 $2.0535
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    2SB1559 56
    • 1 $4.2
    • 10 $2.1
    • 100 $2.1
    • 1000 $2.1
    • 10000 $2.1
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    Santek 2SB1559

    POWER BIPOLAR TRANSISTOR, 8A I(C), 150V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB1559 63
    • 1 $1.875
    • 10 $1.875
    • 100 $1.125
    • 1000 $1.125
    • 10000 $1.125
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    Toshiba America Electronic Components 2SB1557

    POWER BIPOLAR TRANSISTOR, 7A I(C), 140V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB1557 43
    • 1 $1.8
    • 10 $1.656
    • 100 $1.44
    • 1000 $1.44
    • 10000 $1.44
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    2SB155 Datasheets (97)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB155 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB155 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB155 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB155 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB155 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB155 Unknown Vintage Transistor Datasheets Scan PDF
    2SB155 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB155 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB155 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB155 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB155 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB155 Unknown Cross Reference Datasheet Scan PDF
    2SB1550 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1550 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1550 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1550 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1550 ROHM TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Scan PDF
    2SB1550 ROHM TO-220, TO-220FP, TO-220FN, HRT Transistors Scan PDF
    2SB1551 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1551 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SB155 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1559

    Abstract: 2SD2389
    Text: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1559 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2389 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original     		2SB1559 2SD2389 2SB1559 2SD2389 PDF

    2SD2389

    Abstract: audio Darlington 6A 2SB1559
    Text: Inchange Semiconductor Product Specification 2SB1559 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2389 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		2SB1559 2SD2389 2SD2389 audio Darlington 6A 2SB1559 PDF

    2SB1558

    Abstract: 2SD2387
    Text: Inchange Semiconductor Product Specification 2SB1558 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PI package ・Complement to type 2SD2387 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		2SB1558 2SD2387 2SB1558 2SD2387 PDF

    2SD2386

    Abstract: 2SB1557 NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION


    Original     		2SD2386 2SB1557 2SD2386 2SB1557 NPN POWER DARLINGTON TRANSISTORS PDF

    2SB1551

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB1551 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to


    Original     		2SB1551 O-220Fa O-220Fa) -20mA 2SB1551 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1553 Silicon PNP epitaxial planar type Unit: mm 2.5±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Allowing automatic insertion with radial taping


    Original     		2SB1553 PDF

    B1557

    Abstract: 2SB1557 2SD2386
    Text: 2SB1557 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1557 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2386 Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		2SB1557 2SD2386 2-16C1A B1557 2SB1557 2SD2386 PDF

    2SB1554

    Abstract: No abstract text available
    Text: Power Transistors 2SB1554 Silicon PNP epitaxial planar type For power amplification Unit: mm 5.0±0.1 • Features Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –20 V Peak collector current


    Original     		2SB1554 2SB1554 PDF

    2SB1553

    Abstract: No abstract text available
    Text: Power Transistors 2SB1553 Silicon PNP epitaxial planar type Unit: mm 18.0±0.5 Solder Dip Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −6 V Peak collector current ICP −6


    Original     		2SB1553 2SB1553 PDF

    D2387

    Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2387 2SB1558 2-16C1A D2387 transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387 PDF

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2384 2SB1555 2-21F1A 2-21F1A 2SB1555 2SD2384 PDF

    2SD2386

    Abstract: 2SB1557 npn DARLINGTON 10A
    Text: Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION


    Original     		2SD2386 2SB1557 2SD2386 2SB1557 npn DARLINGTON 10A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1557- SILICON PNP EPITAXIAL TYPE DARLINGTON POWER U nit in mm POW ER AM PLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2 S D 2 3 8 6 03.2*0.2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		2SB1557· --140V 2-16C1A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V q e O = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SB1555 2SD2384 PDF

    2SB1557

    Abstract: 2SD2386
    Text: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 03.2 ±0.2 1 5.9 M A X . High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Tc = 25°C)


    OCR Scan     		2SB1557 2SD2386 2SB1557 PDF

    2SB1558

    Abstract: 2SD2387
    Text: TO SH IBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2387 Unit in mm 1 5.9 M A X . • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 t> 03.2 ±0.2 -Ú


    OCR Scan     		2SD2387 2SB1558 2SB1558 2SD2387 PDF

    2SB1555

    Abstract: 2-21F1A 2SD2384
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 555 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2384 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		2SB1555 --140V 2SD2384 2SB1555 2-21F1A PDF

    TOSHIBA Transistor Silicon PNP Epitaxial Type

    Abstract: 2SB1557 2SD2386
    Text: 2SB1557 TOSHIBA TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 3.2 ± 0 .2 15.9M AX High Breakdown Voltage : VcEO = —140V (Min.) Complementary to 2SD2386 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SB1557 --140V 2SD2386 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1557 PDF

    2SB1550

    Abstract: No abstract text available
    Text: h ÿ > 'S /'Transistors 2SB1550 2SB1550 Epitaxial Planar PNP Silicon Transistor Darlington Freq. Power Amp. • M i r fiiE l/ D im e n s io n s (Unit : mm) 9 — U > S >i£t&bT hFE A 'iS '- 'o 1) 2) * - 4.5± 0.2 KF*3»o ¿3,6±0.2 3 ) ^ - i 5 7 o i • Features


    OCR Scan     		2SB1550 O-220 SC-46 2SB1550 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2384 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2384 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO —140V (Mm.) Complementary to 2SB1555 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		2SD2384 --140V 2SB1555 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 PO W ER AM PLIFIER APPLICATIONS Unit in mm .2 + 0.2 15.9MAX. • High Breakdown Voltage : V^EO = 140V (Min.) • Complementary to 2SB1557 ^o 1 , / J- f / i k A 5


    OCR Scan     		2SD2386 2SB1557 PDF

    2SB1557

    Abstract: 2SD2386
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1557 03.2 ±0.2


    OCR Scan     		2SD2386 2SB1557 2SD2386 PDF

    2SB1558

    Abstract: 2SD2387
    Text: TOSHIBA 2SB1558 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 55 8 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2387 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SB1558 2SD2387 2SB1558 PDF

    a1000n

    Abstract: common emitter amplifier 2-21F1A 2SB1556 2SD2385
    Text: TOSHIBA 2SB1556 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2SB1 556 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		2SB1556 2SD2385 a1000n common emitter amplifier 2-21F1A 2SB1556 2SD2385 PDF