2SK1185
Abstract: FM20
Text: 2SK1185 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics (Ta = 25ºC) Ratings typ Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±5 A I DSS 250 µA VDS = 100V, VGS = 0V
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2SK1185
2SK1185
FM20
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2SK1181
Abstract: No abstract text available
Text: 2SK1181 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±13 A I DSS A VTH 2.0 8.5 ±52 (Tch ID (pulse) 150ºC) min 500 I D = 250µA, VGS = 0V
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2SK1181
FM100
2SK1181
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SLA5038
Abstract: 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848
Text: 3 Power MOSFETs 3-1. MOSFETs 3-2. MOSFET Arrays 25 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419
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2SK1188
2SK1189
2SK2419
2SK1190
2SK2420
2SK1191
2SK2421
2SK1192
2SK1712
2SK1185
SLA5038
2SK1190
SLA5015
2SK1192
SLA5013
2SK1180
2SK1191
SLA5012
SMA5106
2SK2848
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2SK1186
Abstract: FM20
Text: 2SK1186 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ID ±9 A I DSS A VTH 2.0 W Re (yfs) 2.4 ±36 (Tch ID (pulse) 150ºC) 30 (Tc = 25ºC)
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2SK1186
2SK1186
FM20
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2SK1177
Abstract: 2SK2420 2SK1180
Text: 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419 22.0 35 EAS RDS (ON) max (VGS = 10V) Ciss (typ)
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2SK1188
2SK1189
2SK2419
2SK1190
2SK2420
2SK1191
2SK2421
2SK1192
2SK1712
2SK1185
2SK1177
2SK1180
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2SK118
Abstract: 2SK1182 2SK118+equivalent
Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)
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2SK118
2SK118
2SK1182
2SK118+equivalent
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2SK3460
Abstract: 2SK2710A 2SK3332 2SK3460 equivalent 2SK2708 FKV550T 2SK1190 2SK1191 2SK2706 2SK3199 equivalent
Text: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SJ424* VGSS (V) ID (A) ID (pulse) (A) PD (W) ±5 ±20 25 ±20 ±8 ±32 ±20 ±2.5 ±10 500 ±20 ±8.5 2SK1180 500 ±20 2SK1181 500 2SK1183 −60 ±20 2SJ425 −60
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2SJ424*
2SK1180
2SK1181
2SK1183
2SJ425
2SK1177
2SK1179
2SK1184
2SK1185
2SK1186
2SK3460
2SK2710A
2SK3332
2SK3460 equivalent
2SK2708
FKV550T
2SK1190
2SK1191
2SK2706
2SK3199 equivalent
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2SK1183
Abstract: FM20
Text: 2SK1183 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol (Ta = 25ºC) Ratings typ min Unit max Conditions VDSS 200 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA
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2SK1183
FM100
2SK1183
FM20
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2SK1187
Abstract: FM20
Text: 2SK1187 External dimensions 1 . FM20 Absolute Maximum Ratings Ratings Unit Symbol VDSS 100 V V BR DSS VGSS ±20 V I GSS ID ±12 A I DSS A VTH 2.0 W Re (yfs) 4.4 58 mJ RDS (on) 0.12 Tch 150 ºC Ciss Tstg –55 to +150 ºC ±48 (Tch 35 (Tc = 25ºC) PD
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2SK1187
2SK1187
FM20
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2SK1181
Abstract: No abstract text available
Text: 2SK1181 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±13 A I DSS A VTH 2.0 85 (Tc = 25ºC) W Re (yfs) 8.5 ±52 (Tch ID (pulse) PD 150ºC)
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2SK1181
FM100
2SK1181
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2SK1185
Abstract: FM20
Text: 2SK1185 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ID ±5 A I DSS A VTH 2.0 W Re (yfs) 1.5 ±20 (Tch ID (pulse) 150ºC) 25 (Tc = 25ºC)
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2SK1185
2SK1185
FM20
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2sk129
Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119
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2SK101
2SK102
2SK103
2SK104
2SK105
2SK106
2SK107
2SK108
2SK109
2SK109A
2sk129
2sk150 datasheet
2SK101
2SK107 data sheet
2SK105 Datasheet
2sk122
2SK109
2sk146 datasheet
2SK182E
2SK131
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2SK1186
Abstract: FM20
Text: 2SK1186 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol min Unit max Conditions VDSS 100 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±9 A I DSS
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2SK1186
FM100
2SK1186
FM20
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2SK1187
Abstract: FM20
Text: 2SK1187 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Electrical Characteristics Ta = 25ºC Ratings Unit Symbol (Ta = 25ºC) Ratings typ min Unit max Conditions VDSS 100 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA
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2SK1187
FM100
2SK1187
FM20
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2SK1184
Abstract: FM20
Text: 2SK1184 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics (Ta = 25ºC) Ratings typ Symbol Ratings Unit Symbol VDSS 200 V V(BR) DSS VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±5 A I DSS 250 µA VDS = 200V, VGS = 0V
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2SK1184
2SK1184
FM20
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2SK1187
Abstract: FM20
Text: 2SK1187 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ±12 ID ±48 (Tch ID (pulse) 150ºC) 35 (Tc = 25ºC) PD min (Ta = 25ºC) Ratings typ
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2SK1187
2SK1187
FM20
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2SK1188
Abstract: FM20
Text: 2SK1188 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V(BR) DSS VGSS ±20 V I GSS ID ±10 A I DSS A VTH 2.0 25 (Tc = 25ºC) W Re (yfs) 2.2 ±40 (Tch ID (pulse) PD 150ºC)
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2SK1188
2SK1188
FM20
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2SK1180
Abstract: No abstract text available
Text: 2SK1180 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics (Ta = 25ºC) Ratings typ Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±10 A I DSS 250 µA VDS = 500V, VGS = 0V
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2SK1180
FM100
2SK1180
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2SK1188
Abstract: FM20
Text: 2SK1188 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Ratings Unit Symbol min (Ta = 25ºC) Ratings typ Unit max Conditions VDSS 60 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±10 A I DSS
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2SK1188
FM100
2SK1188
FM20
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2sk170 FET
Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch
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2SK246
2SJ103
2SK117
2SK362
2SK363
2SK364
2SJ104
2SK30ATM
2SK170
2SJ74
2sk170 FET
Junction-FET
fet to92
2SK118
2SJ74
2sk879
2sj105
2SJ14
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2SK118
Abstract: No abstract text available
Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)
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2SK118
2SK118
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condenser microphone 20hz
Abstract: 2SK118
Text: TOSHIBA 2SK118 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 18 Unit in mm GENERAL PURPOSE A N D IM PEDANCE CONVERTER A N D CONDENSER MICROPHONE APPLICATIONS 4.2 MAX. • • • High Breakdown Voltage High Input Impedance Low Noise
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2SK118
100k0,
120Hz)
55MAX.
condenser microphone 20hz
2SK118
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2SK1189
Abstract: No abstract text available
Text: TOSHIBA 2SK118 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 9 <; K 1 1 8 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 4.2 MAX. • • • High Breakdown Voltage High Input Impedance Low Noise
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2SK118
120Hz)
2SK1189
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK118 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 18 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 4.2MAX. • • • High Breakdown Voltage High Input Impedance Low Noise
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2SK118
55MAX.
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