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    Toshiba America Electronic Components 2SK1365

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    Toshiba America Electronic Components 2SK1365F

    Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA 2SK1365F 1,000
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    2SK136 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK136 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK136 Unknown FET Data Book Scan PDF
    2SK136 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK136 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK136 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK136 Panasonic Si N-channel junction. AF low-noise amplifier. Scan PDF
    2SK1362 Toshiba Original PDF
    2SK1362 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1363 Toshiba Original PDF
    2SK1363 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1363 Unknown Scan PDF
    2SK1363 Toshiba Silicon N-Channel MOS Type / High Speed / High Current Switching Applications Scan PDF
    2SK1363 Toshiba N-Channel Enhancement MOSFET Scan PDF
    2SK1365 Toshiba TRANS MOSFET N-CH 1000V 7A 3(2-16F1B) Original PDF
    2SK1365 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK1365 Toshiba N-Channel MOSFET Original PDF
    2SK1365 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1365 Toshiba Original PDF
    2SK1365 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, switching power supply applications Scan PDF
    2SK1365 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (pi-MOSII.5) Scan PDF

    2SK136 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k1365

    Abstract: 2SK1365
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1365 k1365 2SK1365 PDF

    k1365

    Abstract: No abstract text available
    Text: 2SK1365 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1365 Switching Power Supply Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)


    Original     		2SK1365 2-16F1B k1365 PDF

    k1365

    Abstract: No abstract text available
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1365 2-16F1B k1365 PDF

    k1365

    Abstract: k136 2SK1365
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)


    Original     		2SK1365 k1365 k136 2SK1365 PDF

    k1365

    Abstract: 2SK1365 416W
    Text: 2SK1365 東芝電界効果トランジスタ .5 シリコンNチャネルMOS形 π−MOSⅡ 2SK1365 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 1.5Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。


    Original     		2SK1365 2-16F1B 2006-11toff VDD400 K1365 k1365 2SK1365 416W PDF

    K1365

    Abstract: 2SK1365 K136
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1365 K1365 2SK1365 K136 PDF

    2SK1365

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type π-MOS II.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.5Ω (Typ.) • High Forward Transfer Admittance


    Original     		2SK1365 2SK1365 PDF

    K1365

    Abstract: 2SK1365
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		2SK1365 K1365 2SK1365 PDF

    k1365

    Abstract: 2SK1365
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)


    Original     		2SK1365 k1365 2SK1365 PDF

    800v nmos

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)


    OCR Scan     		2SK1365 800v nmos PDF

    2SK1362

    Abstract: ifr 220
    Text: TOSHIBA Discrete Semiconductors 2SK1362 Field Effect Transistor Silicon N Channel MOSType rc-MOS II High Speed, High Current Switching Applications Features • High Breakdown Voltage ' V (BR)DSS - 9 0 0 V • High Forward Transfer Admittance - |Yfsl= 1.7S(Typ.)


    OCR Scan     		2SK1362 00Elbl3 ifr 220 PDF

    diode U1J

    Abstract: 2SK1365
    Text: T O S H IB A 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S SWITCHING PO W ER SUPPLY APPLICATIONS • Low Drain-Source O N Resistance


    OCR Scan     		2SK1365 -l-50 diode U1J 2SK1365 PDF

    k1365

    Abstract: toshiba l40 2SK1365
    Text: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII.5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING POWER SUPPLY APPLICATIONS 1 5 .8 1 0 .5 , • Low Drain-Source ON Resistance


    OCR Scan     		2SK1365 k1365 toshiba l40 2SK1365 PDF

    k1365

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII .5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING PO W ER SUPPLY APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5 .8 ± 0 .5 | • Low Drain-Source ONResistance


    OCR Scan     		2SK1365 300/uA k1365 PDF

    2SK1362

    Abstract: transistor SS 110
    Text: TOSHIBA 2SK1362 Field Effect Transistor Silicon N Channel MOS Type rc-MOS II High Speed, High Current Switching Applications Features • High Breakdown Voltage ' V (BR)DSS = 9 0 0 V • High Forward Transfer Admittance - y,s = 1 -7 S Hyp-) • Low Leakage Current


    OCR Scan     		2SK1362 100nA 2SK1362 transistor SS 110 PDF

    transistor 2sk 11

    Abstract: 2sk1363
    Text: TOSHIBA 2SK1363 Field Effect Transistor U n it in m m Silicon N Channel MOS Type n-MOS 11.5 15.8 ± 0 -5 gf 3.6 ± 0 .2 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' F*ds(on) = 1-1Q (Typ.) • High Forward Transfer Admittance


    OCR Scan     		2SK1363 300nA transistor 2sk 11 2sk1363 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O S II5 2 S K 1 365 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS U nit in mm SWITCHING PO W ER SUPPLY APPLICATIONS r • Low Drain-Source ON Resistance


    OCR Scan     		2SK1365 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1362 Field Effect Transistor Unit in mm Silicon N Channel MOSType rc-MOS II 15.8 ± 0.5 — 0 3.6 ±0.2 - High Speed, High Current Switching Applications Features • High Breakdown Voltage ' V (B R )D S S = 9 0 0 V


    OCR Scan     		2SK1362 DD21bl3 PDF

    transister

    Abstract: 2SK1363
    Text: TOSHIBA Discrete Semiconductors 2SK1363 Field Effect Transistor Unit in mm Silicon N Channel MOSType ji-MOS II.5 15.8 ±0.5 #3.6 ±0.2 35 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance _ Rds(on) = 1-1^ (Typ.)


    OCR Scan     		2SK1363 transister 2SK1363 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII .5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : Rd S(ON) = 1-5H (Typ.)


    OCR Scan     		2SK1365 PDF

    2SK1363

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1363 Field Effect Transistor Silicon N Channel MOSType ji-MOS II.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance _ Rds(on) = 1-1^ (Typ.) • High Forward Transfer Admittance


    OCR Scan     		2SK1363 2SK1363 PDF

    transistor 2SK1603

    Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
    Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all


    OCR Scan     		OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358 PDF

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


    OCR Scan     		2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL PDF

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


    OCR Scan     		2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 PDF