2SK136 Search Results

800v nmos

Contextual Info: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)

2SK1362

Abstract: ifr 220
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1362 Field Effect Transistor Silicon N Channel MOSType rc-MOS II High Speed, High Current Switching Applications Features • High Breakdown Voltage ' V (BR)DSS - 9 0 0 V • High Forward Transfer Admittance - |Yfsl= 1.7S(Typ.)

k1365

Abstract: 2SK1365
Contextual Info: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)

diode U1J

Abstract: 2SK1365
Contextual Info: T O S H IB A 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S SWITCHING PO W ER SUPPLY APPLICATIONS • Low Drain-Source O N Resistance

k1365

Abstract: toshiba l40 2SK1365
Contextual Info: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII.5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING POWER SUPPLY APPLICATIONS 1 5 .8 1 0 .5 , • Low Drain-Source ON Resistance

k1365

Contextual Info: 2SK1365 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1365 Switching Power Supply Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)

k1365

Contextual Info: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII .5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING PO W ER SUPPLY APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5 .8 ± 0 .5 | • Low Drain-Source ONResistance

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 1 365 SEM ICONDUCTOR TO SH IBA SILICON N CHANNEL MOS TYPE TECHNICAL tt- M O S II .5 DATA (2SK1365) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. SWITCHING POWER SUPPLY APPLICATIONS.

2SK1362

Abstract: transistor SS 110
Contextual Info: TOSHIBA 2SK1362 Field Effect Transistor Silicon N Channel MOS Type rc-MOS II High Speed, High Current Switching Applications Features • High Breakdown Voltage ' V (BR)DSS = 9 0 0 V • High Forward Transfer Admittance - y,s = 1 -7 S Hyp-) • Low Leakage Current

transistor 2sk 11

Abstract: 2sk1363
Contextual Info: TOSHIBA 2SK1363 Field Effect Transistor U n it in m m Silicon N Channel MOS Type n-MOS 11.5 15.8 ± 0 -5 gf 3.6 ± 0 .2 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' F*ds(on) = 1-1Q (Typ.) • High Forward Transfer Admittance

k1365

Contextual Info: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)

k1365

Abstract: k136 2SK1365
Contextual Info: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)

Contextual Info: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O S II5 2 S K 1 365 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS U nit in mm SWITCHING PO W ER SUPPLY APPLICATIONS r • Low Drain-Source ON Resistance

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1362 Field Effect Transistor Unit in mm Silicon N Channel MOSType rc-MOS II 15.8 ± 0.5 — 0 3.6 ±0.2 - High Speed, High Current Switching Applications Features • High Breakdown Voltage ' V (B R )D S S = 9 0 0 V

transister

Abstract: 2SK1363
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1363 Field Effect Transistor Unit in mm Silicon N Channel MOSType ji-MOS II.5 15.8 ±0.5 #3.6 ±0.2 35 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance _ Rds(on) = 1-1^ (Typ.)

K1365

Abstract: 2SK1365 K136
Contextual Info: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)

2SK1365

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type π-MOS II.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.5Ω (Typ.) • High Forward Transfer Admittance

K1365

Abstract: 2SK1365
Contextual Info: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.0 S (typ.)

Contextual Info: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII .5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : Rd S(ON) = 1-5H (Typ.)

k1365

Abstract: 2SK1365
Contextual Info: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)

2SK1363

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1363 Field Effect Transistor Silicon N Channel MOSType ji-MOS II.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance _ Rds(on) = 1-1^ (Typ.) • High Forward Transfer Admittance

transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

2SK1118

Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531