Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK314 Search Results

    2SK314 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3148-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 20A 60Mohm To-220Fm Visit Renesas Electronics Corporation
    2SK3149-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 20A 60Mohm To-220Ab Visit Renesas Electronics Corporation
    2SK3147L-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 5A 130Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SK3147STR-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 5A 130Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SK314 Price and Stock

    Rochester Electronics LLC 2SK3140-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3140-E Bulk 101
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3
    • 10000 $3
    		Buy Now

    Rochester Electronics LLC 2SK3140-02-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3140-02-E Bulk 101
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3
    • 10000 $3
    		Buy Now

    Renesas Electronics Corporation 2SK3140-02-E

    2SK3140-02-E
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK3140-02-E 1,206 111
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.0625
    • 10000 $3.0625
    		Buy Now
    2SK3140-02-E 327 111
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.0625
    • 10000 $3.0625
    		Buy Now
    Rochester Electronics 2SK3140-02-E 1,533 1
    • 1 $2.88
    • 10 $2.88
    • 100 $2.71
    • 1000 $2.45
    • 10000 $2.45
    		Buy Now

    Renesas Electronics Corporation 2SK3140E

    Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220CFM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK3140E 837 111
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.0625
    • 10000 $3.0625
    		Buy Now

    Renesas Electronics Corporation 2SK3140-E

    2SK3140 - Power Field-Effect Transistor, 60A, 60V, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK3140-E 837 1
    • 1 $2.88
    • 10 $2.88
    • 100 $2.71
    • 1000 $2.45
    • 10000 $2.45
    		Buy Now
    Find more 2SK314 price and stock on Findchips.com

    2SK314 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK314 Unknown FET Data Book Scan PDF
    2SK3140 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3140 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3141 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3141 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3141-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3142 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3142 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3142-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3144 Toshiba Original PDF
    2SK3147 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3147(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147L-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3147S Kexin N-Channel MOSFET Original PDF
    2SK3147(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147S Renesas Technology SMD, High Speed Power Amplifier, 100V 5A 20W, MOS-FET N-Channel enhanced Original PDF

    2SK314 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3147S

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Silicon N Cannel MOSFET 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1


    Original     		PDF 2SK3147S O-252 2SK3147S

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK3148 Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 45 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 1. Gate 2. Drain


    Original     		PDF 2SK3148 220FM Hitachi DSA002749

    Hitachi DSA0076

    Abstract: 2SK3149
    Text: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching ADE-208-749B Z 3rd. Edition Mar. 2001 Features • Low on-resistance R DS =45mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2


    Original     		PDF 2SK3149 ADE-208-749B 220AB Hitachi DSA0076 2SK3149

    2SK3149

    Abstract: 4560M Hitachi DSA00398
    Text: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching ADE-208-749A Z 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220AB


    Original     		PDF 2SK3149 ADE-208-749A 220AB 2SK3149 4560M Hitachi DSA00398

    Untitled

    Abstract: No abstract text available
    Text: 2SK3140 Spice parameter .SUBCKT 2sk3140 1 2 3 * Model generated on Jul 26, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:


    Original     		PDF 2SK3140 1e-32 06858e-05 17288e-06 5e-09 55919e-09 XTI88e-06

    2SK3142

    Abstract: Hitachi DSA00239
    Text: 2SK3142 Silicon N Channel MOS FET High Speed Power Switching ADE-208-681A Z 2nd. Edition February 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM


    Original     		PDF 2SK3142 ADE-208-681A 220CFM 2SK3142 Hitachi DSA00239

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching ADE-208-749A Z 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220AB


    Original     		PDF 2SK3149 ADE-208-749A 220AB Hitachi DSA00279

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK3142 Silicon N Channel MOS FET High Speed Power Switching ADE-208-681A Z 2nd. Edition Feb. 1999 Features • Low on-resistance R DS(on) =4mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2


    Original     		PDF 2SK3142 ADE-208-681A 220CFM D-85622 Hitachi DSA00276

    2SK3140

    Abstract: Hitachi DSA00239
    Text: 2SK3140 Silicon N Channel MOS FET High Speed Power Switching ADE-208-767C Z 4th. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM


    Original     		PDF 2SK3140 ADE-208-767C 220CFM 2SK3140 Hitachi DSA00239

    2SK3141

    Abstract: Hitachi DSA00239
    Text: 2SK3141 Silicon N Channel MOS FET High Speed Power Switching ADE-208-680B Z 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220AB


    Original     		PDF 2SK3141 ADE-208-680B 220AB 2SK3141 Hitachi DSA00239

    2SK3140

    Abstract: PRSS0003AE-A
    Text: 2SK3140 Silicon N Channel MOS FET High Speed Power Switching REJ03G1069-0500 Previous: ADE-208-767C Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3140 REJ03G1069-0500 ADE-208-767C) PRSS0003AE-A O-220C 2SK3140 PRSS0003AE-A

    DS1280

    Abstract: 2SK3149 2SK3149-E PRSS0004AC-A
    Text: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching REJ03G1074-0400 Previous: ADE-208-767C Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3149 REJ03G1074-0400 ADE-208-767C) PRSS0004AC-A O-220AB) DS1280 2SK3149 2SK3149-E PRSS0004AC-A

    2sk4005

    Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321


    Original     		PDF 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2sk4005 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 45 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220AB D G 1 2 S 3 1. Gate


    Original     		PDF 2SK3149 220AB Hitachi DSA002749

    1E32

    Abstract: No abstract text available
    Text: 2SK3142 Spice parameter .SUBCKT 2sk3142 1 2 3 * Model generated on May 25, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:


    Original     		PDF 2SK3142 1e-32 11491e-05 77661e-06 5e-09 06236e-09 1E32

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1


    Original     		PDF 2SK3147S O-252

    Hitachi DSA002753

    Abstract: No abstract text available
    Text: 2SK3140 Silicon N Channel MOS FET High Speed Power Switching ADE-208-767C Z 4th. Edition February 1999 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source 2SK3140 Outline TO–220CFM


    Original     		PDF 2SK3140 ADE-208-767C 220CFM Hitachi DSA002753

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK3141 Silicon N Channel MOS FET High Speed Power Switching ADE-208-680B Z 3rd. Edition February 1999 Features • • • Low on-resistance RDS(on) = 4 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline TO–220AB D


    Original     		PDF 2SK3141 ADE-208-680B 220AB Hitachi DSA002749

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731(Z) 1st. Edition December 1998 Features • • • Low on-resistance R DS =0.1 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline DPAK–2


    Original     		PDF 2SK3147 ADE-208-731 D-85622 Hitachi DSA002780

    HITACHI 2SK* TO-3

    Abstract: No abstract text available
    Text: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance R ds = 45 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline T O -220A B Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		PDF 2SK3149 -220A HITACHI 2SK* TO-3

    Untitled

    Abstract: No abstract text available
    Text: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 1st. Edition February 1999 Features • Low on-resistance • • Rds = 0.1 Q. typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline DPAK-2 II


    OCR Scan     		PDF 2SK3147

    Untitled

    Abstract: No abstract text available
    Text: 2SK3148 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance • Rds = 45 m ii typ. High speed switching • 4 V gate drive device can be driven from 5 V source Outline T O -2 2 0 F M Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		PDF 2SK3148

    Untitled

    Abstract: No abstract text available
    Text: 2SK3141 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-680B Z 3rd. Edition February 1999 Features • Low on-resistance • • R DS(on) = 4 m ii typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline Absolute Maximum Ratings (Ta = 25 °C)


    OCR Scan     		PDF 2SK3141 ADE-208-680B

    2SK314

    Abstract: 4511 gm JE 33 5551a tt 22
    Text: NEC j m*Ti\rx A J u n c tio n Field E ffe c t T ra n s is to r 2SK314 m Silicon N-Channel Junction FET Audio Frequency Low Noise Amplifier Industrial Use Ü - E 1 /P A C K A G E DIM ENSIO NS ^ « /F E A T U R E S Unit : mm o ® iß « T " to NF = 1.0 dB TYP. (VDs = 10 V,Id = 5 mA,RG= 1.0 kQ,f=100 Hz)


    OCR Scan     		PDF 2SK314 2SK314 4511 gm JE 33 5551a tt 22