2SK373 Search Results

2SK373 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SK3736-E		Renesas Electronics Corporation	Nch Single Power Mosfet 250V 6A 700Mohm To-220Ab

2SK373 Price and Stock

Filter by Manufacturer


onsemi 2SK3738-TL-E JFET N-CH 40V 1MA SMCP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3738-TL-E	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	2SK3738-TL-E		28,625		1	1 $0.1408 10 $0.1408 100 $0.1324 1000 $0.1197 10000 $0.1197	Buy Now
Rochester Electronics LLC 2SK3738-TL-E JFET N-CH 40V 1MA SMCP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3738-TL-E	Bulk			2,049	1 - 10 - 100 - 1000 - 10000 $0.15	Buy Now
onsemi 2SK3737-5-TL-E RF MOSFET 10V 3MCP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3737-5-TL-E	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	2SK3737-5-TL-E		47,708		1	1 $0.8667 10 $0.8667 100 $0.8147 1000 $0.7367 10000 $0.7367	Buy Now
Rochester Electronics LLC 2SK3737-5-TL-E RF MOSFET 10V 3MCP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3737-5-TL-E	Bulk			333	1 - 10 - 100 - 1000 $0.9 10000 $0.9	Buy Now

2SK373 Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK373	Toshiba	N-Channel MOSFET	Original	PDF
2SK373	Unknown		Scan	PDF
2SK373	Unknown	FET Data Book	Scan	PDF
2SK373	Toshiba	FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE	Scan	PDF
2SK373	Toshiba	Silicon N channel field effect transistor for audio amplifier, high voltage amplifier and constant current applications	Scan	PDF
2SK373	Toshiba	Junction FETs	Scan	PDF
2SK3731	Kexin	N-Channel Enhancement Mode MOSFET	Original	PDF
2SK3731	Panasonic	N-Channel Enhancement Mode MOSFET	Original	PDF
2SK3731	TY Semiconductor	N-Channel Enhancement Mode MOSFET - TO-263	Original	PDF
2SK3736	Renesas Technology	Silicon N Channel MOS FET Power Switching	Original	PDF
2SK3737	Sanyo Semiconductor	FM Tuner, VHF Amplifier Applications	Original	PDF
2SK3737-5-TL-E	SANYO Electric	RF FETs, Discrete Semiconductor Products, MOSFET N-CH 15V 30MA 3MCP	Original	PDF
2SK3738	Sanyo Semiconductor	Junction FETs	Original	PDF
2SK3738-TL-E	On Semiconductor	2SK3738 - JunctionFET 40V 1mA IGSS;-500pA max. Nch Single SMCP	Original	PDF

2SK373GR	Toshiba	Silicon N-Channel Junction Transistor	Scan	PDF
2SK373O	Toshiba	Silicon N-Channel Junction Transistor	Scan	PDF
2SK373Y	Toshiba	Silicon N-Channel Junction Transistor	Scan	PDF

2SK373 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SK3731 TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features Low on-resistance, low Qg +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2	Original	2SK3731 O-263	PDF
2SK3737 Abstract: 71505 8390-3 MARKING KA Text: 2SK3737 Ordering number : ENN8390 2SK3737 N-Channel Silicon MOSFET FM Tuner, VHF Amplifier Applications Features • • • Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol	Original	2SK3737 ENN8390 2SK3737 71505 8390-3 MARKING KA	PDF
K373 Abstract: k3731 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3	Original	2002/95/EC) 2SK3731 K373 k3731	PDF
2SK3738 Abstract: ITR00837 ITR00838 ITR00839 ITR00840 ENN7671 Text: Ordering number : ENN7671 2SK3738 N-Channel Junction Silicon FET 2SK3738 Impedance Converter Applications Application • • Package Dimensions Impedance conversion. Infrared sensor. unit : mm 2124 [2SK3738] Features • Small IGSS. Small Ciss. Ultrasmall package permitting applied sets to be	Original	ENN7671 2SK3738 2SK3738] 2SK3738 ITR00837 ITR00838 ITR00839 ITR00840 ENN7671	PDF
k3731 Abstract: k373 2sk3731 Text: Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 1.4 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C	Original	2SK3731 k3731 k373 2sk3731	PDF
2SK373 Abstract: No abstract text available Text: 2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)	Original	2SK373 SC-43 2SK373	PDF
2SK373 Abstract: No abstract text available Text: 2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)	Original	2SK373 2SK373	PDF
2SK373 Abstract: No abstract text available Text: 2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Applications • High breakdown voltage: VGDS = −100 V min · High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)	Original	2SK373 SC-43 2SK373	PDF
SMD Transistors nc Abstract: 2SK3731 V782 Text: Transistors IC SMD Type N-channel enhancement mode MOSFET 2SK3731 TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features Low on-resistance, low Qg +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1	Original	2SK3731 O-263 SMD Transistors nc 2SK3731 V782	PDF
2SK3737 Abstract: D1306 8390-3 IT09918 Text: 2SK3737 注文コード No. N 8 3 9 0 三洋半導体データシート N 2SK3737 N チャネル MOS 型シリコン電界効果トランジスタ FM チューナ , VHF 帯増幅用特長・低雑音である。・電力利得が大きい。・帰還容量が小さい。	Original	2SK3737 100MHz, IT09915 IT08682 100MHz IT09917 IT09918 2SK3737 D1306 8390-3 IT09918	PDF
K3731 Abstract: K373 2SK3731 2SK373 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET • Features Unit: mm • Low on-resistance, low Qg • High avalanche resistance 4.6±0.2 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3	Original	2002/95/EC) 2SK3731 O-220C-G1 K3731 K3731 K373 2SK3731 2SK373	PDF
2sk170 FET Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14 Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch	Original	2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14	PDF
7027a Abstract: 2SK3738 Text: 2SK3738 Ordering number : EN7671A SANYO Semiconductors DATA SHEET 2SK3738 N-Channel Junction Silicon FET Impedance Converter Applications Applications • • Impedance conversion Infrared sensor Features • • • Small IGSS Small Ciss Ultrasmall package permitting applied sets to be small and slim	Original	EN7671A 2SK3738 027A-003 2SK3738-TL-E 7027a 2SK3738	PDF
2SK3736 Abstract: PRSS0004AC-A Text: 2SK3736 Silicon N Channel MOS FET Power Switching REJ03G0525-0200 Rev.2.00 Jul 27, 2006 Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance Outline RENESAS Package code: PRSS0004AC-A Package name: TO-220AB D 1. Gate 2. Drain	Original	2SK3736 REJ03G0525-0200 PRSS0004AC-A O-220AB) 2SK3736 PRSS0004AC-A	PDF

2SK3738 Abstract: No abstract text available Text: Ordering number : EN7671A 2SK3738 N-Channel JFET http://onsemi.com 40V, 50 to 130 A, 0.13mS, SMCP Applications • • Impedance conversion Infrared sensor Features • • • Small IGSS Small Ciss Ultrasmall package permitting applied sets to be small and slim	Original	EN7671A 2SK3738 2SK3738	PDF
2SK3738 Abstract: D1306 ITR00837 ITR00838 ITR00839 ITR00840 Text: 注文コード No. N 7 6 7 1 2SK3738 三洋半導体データシート N 2SK3738 用途 N チャネル接合形シリコン電界効果トランジスタインピーダンス変換用・インピーダンス変換用。・赤外線センサー用。特長	Original	2SK3738 IT06670 IT06671 IT06672 2SK3738 D1306 ITR00837 ITR00838 ITR00839 ITR00840	PDF
2SK3738 Abstract: No abstract text available Text: Ordering number : ENN7671 2SK3738 2SK3738 N-Channel Junction Silicon FET Impedance Converter Applications Application • • Package Dimensions Impedance conversion. Infrared sensor. unit : mm 2124 [2SK3738] Features • Small IGSS. Small Ciss. Ultrasmall package permitting applied sets to be	Original	2SK3738 ENN7671 2SK3738] 2SK3738/D 2SK3738	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK373 TOSHIBA FIELD EFFECT TRANSISTOR i SILICON N CHANNEL JUNCTION TYPE <; k 3 7 3 FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT Unit in mm CURRENT APPLICATIONS • 5.1 M AX. High Breakdown Voltage : V q d s = _ 100V Min. • T n c i o = _ 1 On A Í M	OCR Scan	2SK373 SC-43	PDF
2SK373 Abstract: No abstract text available Text: TOSHIBA 2SK373 TO SH IBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2SK373 Unit in mm FOR A U D IO , HIGH VOLTAGE AMPLIFIER A N D CONSTANT CURRENT APPLICATIONS • • 5.1 M A X . High Breakdown Voltage : VGDS= —100V Min. High Input Impedance : lQ gg= —l.OnA (Max.) (VQ.g= —80V)	OCR Scan	2SK373 -100V SC-43	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SK373 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK373 Unit in mm FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT CURRENT APPLICATIONS • • 5.1 M AX. High Breakdown Voltage : VGDS= —100V Min. High Input Impedance : lGSS~ —1-OnA (Max.) (V(jg= —80V)	OCR Scan	2SK373 T0-92 SC-43	PDF
2SK373 Abstract: No abstract text available Text: T O S H IB A 2SK373 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK373 FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT U nit in mm CURRENT APPLICATIONS • 5.1 M AX. High Breakdown Voltage : V G D S= —100V M in. • 0.45 High Input Impedance : lQ g g = —l.OnA (Max.) (VQ.g= —80V)	OCR Scan	2SK373 -100V SC-43 2SK373	PDF
2SK373 Abstract: No abstract text available Text: TOSHIBA 2SK373 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK373 Unit in mm FOR AUDIO, HIGH VOLTAGE A M PLIFIER AN D CONSTANT . 5.1 MAX. CURRENT APPLICATIONS • • High Breakdown Voltage : VQDg= —100V Min. High Input Impedance : lQ gg= —l.OnA (Max.) (VQg= —80V)	OCR Scan	2SK373 -100V SC-43 2SK373	PDF
vgds 100v Abstract: 2SK373 Text: TOSHIBA 2SK373 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK373 FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT Unit in mm CURRENT APPLICATIONS • . 5.1 M AX. High Breakdown Voltage : VGDS“ —100V Min. • 0.45 High Input Impedance : I@gg= —l.OnA (Max.) (V (jg= —80V)	OCR Scan	2SK373 -100V SC-43 vgds 100v 2SK373	PDF
2SK241 Equivalent FET Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf Text: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo	OCR Scan	OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf	PDF

Privacy Settings

2SK373 Search Results

2SK373 Result Highlights (1)

2SK373 Price and Stock

onsemi 2SK3738-TL-E

Rochester Electronics LLC 2SK3738-TL-E

onsemi 2SK3737-5-TL-E

Rochester Electronics LLC 2SK3737-5-TL-E

2SK373 Datasheets (17)

2SK373 Datasheets Context Search

Untitled

2SK3737

K373

2SK3738

k3731

2SK373

2SK373

2SK373

SMD Transistors nc

2SK3737

K3731

2sk170 FET

7027a

2SK3736

2SK3738

2SK3738

2SK3738

Untitled

2SK373

Untitled

2SK373

2SK373

vgds 100v

2SK241 Equivalent FET