Untitled
Abstract: No abstract text available
Text: IXGH 32N60CD1 IXGT 32N60CD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms
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32N60CD1
32N60CD1
O-247
O-268
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32N60CD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms
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32N60CD1
32N60CD1
O-247
O-268
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32N60CD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings IC25 TC = 25°C 60 A IC90 TC = 90°C 32
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32N60CD1
O-247
32N60CD1
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Untitled
Abstract: No abstract text available
Text: IXGH 32N60CD1 IXGT 32N60CD1 HiPerFASTTM IGBT with Diode VCE SAT typ tfi(typ) Light Speed Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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32N60CD1
O-247
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32N60CD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM VCES IC25 IXGR 32N60CD1 = 600 V = 45 A = 2.7 V = 55 ns VCE SAT tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 Symbol Test Conditions VCES TJ = 25°C to 150°C
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ISOPLUS247TM
32N60CD1
2x31-06B
32N60CD1
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2x31-06B
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM IXGR 32N60CD1 VCES IC25 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V
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ISOPLUS247TM
32N60CD1
247TM
2x31-06B
2x31-06B
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM IXGR 32N60CD1 VCES IC25 = 600 V = 45 A = 2.7 V = 55 ns VCE SAT tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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ISOPLUS247TM
32N60CD1
2x31-06B
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32N60CD1
Abstract: 30-1000T
Text: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 VCE SAT typ tfi(typ) Light Speed Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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32N60CD1
O-247
32N60CD1
30-1000T
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM IXGR 32N60CD1 VCES IC25 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V
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ISOPLUS247TM
32N60CD1
247TM
2x31-06B
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20-600T
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM VCES IC25 IXGR 32N60CD1 = 600 V = 45 A = 2.7 V = 55 ns VCE SAT tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 Symbol Test Conditions VCES TJ = 25°C to 150°C
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ISOPLUS247TM
32N60CD1
2x31-06B
20-600T
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32N60CD1
Abstract: diode fr 307
Text: IXGH 32N60CD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE SAT typ tf1(typ) Light Speed Series = 600 V = 60 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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32N60CD1
O-247
32N60CD1
diode fr 307
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32N60CD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM = 600 V = 45 A = 2.1 V = 55 ns VCES IC25 IXGR 32N60CD1 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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ISOPLUS247TM
32N60CD1
Featu150
32N60CD1
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Untitled
Abstract: No abstract text available
Text: IXGH 32N60CD1 IXGT 32N60CD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE SAT typ tfi(typ) Light Speed Series = 600 V = 60 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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32N60CD1
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM
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O-220
O-263
O-247
PLUS247
O-268
ISOPLUS247TM
O-264
20N30
28N30
30N30
12n60c
60n60 igbt
diode b242
31N60
ixgk50n60bu1
50n60bd1
Diode 12 b2
120n60
60N60
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Untitled
Abstract: No abstract text available
Text: a ix Y S Advanced Technical Information IXGH 32N60CD1 VCES IC25 HiPerFAST IGBT with Diode V CE SAT typ Light Speed Series Symbol t f1(typ) Test Conditions Maximum Ratings =25° C to 150° C 600 V T, : 25°C to 150°C: FL 600 V Continuous ±20 V Transient
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32N60CD1
O-247AD
O-247AD
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Untitled
Abstract: No abstract text available
Text: □ IXYS H H ifl JL æ* X IXGH 32N60CD1 HiPerFAST IGBT with Diode VCES I C25 VCE SAT typ tf1(typ) Light Speed Series V A V ns 600 60 2.1 55 Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i
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32N60CD1
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IXGR32N60CD1
Abstract: No abstract text available
Text: □ TXYS HHifl JLæ* 3k. X HiPerFAST IGBT with Diode ISOPLUS247™ IXGR 32N60CD1 = 600 V = 45 A = 2.1 V = 55 ns V,CES IC25 V CE SAT typ ^fi(typ) (Electrically Isolated Backside) Preliminary data sheet Symbol TestC onditions V C ES Tj = 25°C to 150°C 600
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ISOPLUS247â
32N60CD1
IXGR32N60CD1
IXGR32N60CD1
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32N60CD1
Abstract: No abstract text available
Text: riTvv<v Advanced Technical Information IXGH 32N60CD1 HiPerFAST IGBT w ith Diode I 'fl typ Maximum Ratings Sym bol Test C onditions V C ES Tj = 25°C to 150°C 600 V V CG R Tj = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous +20 V v GEM Transient +30
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32N60CD1
O-247
O-247AD
32N60CD1
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BC 247 B
Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
Text: □ IXYS ADVANCED TECHNICAL INFORMATION 32N60CD1 32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25
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IXGH32N60CD1
IXGH32N60CD1S
O-247
32N60CD1S)
BC 247 B
IXGH32N60
DIODE SMD GEM
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diode lt 247
Abstract: IXGH32N60
Text: ADVANCED TECHNICAL INFORMATION 32N60CD1 32N60CD1S HiPerFAST IGBT with Diode v 600 V 60 A 2.1V 55 ns CES ^C25 v CE sat typ ^fl(typ) Light Speed Series Symbol Test Conditions V CES ^ Vco* Tj = 25°C to 150°C; V « Maximum Ratings = 25°C to 150°C
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IXGH32N60CD1
IXGH32N60CD1S
O-247
32N60CD1S)
diode lt 247
IXGH32N60
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12N60c equivalent
Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t
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ISOPLUS220TM
US247TM
247TM
ISOPLUS22rM
ISOPLUS227TM
IXFE180N10
IXFE73N30Q
IXFE48N50Q
IXFE48N50QD2
12N60c equivalent
13N50 equivalent
equivalent of IGBT 12N60C
motor IG 2200 19
ixlf 19n250a
24N60CD1
19N250
32N50
004II
27N80Q
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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2QN60
Abstract: ixgh 1500
Text: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH
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T0-220AB^
12N100U1
17N100U1
40N30BD1
22N50BU1
24N50BU1
32N50BU1
2QN60BU1
2QN60
ixgh 1500
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