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    Untitled

    Abstract: No abstract text available
    Text: E 6 & 6/CANADA/OP TOELEK R C /1 3D30blD DDD01DS 33T « C A N A 10 T - V /- Photodiode C30817 DATA SH EET Optics Silicon Avalan che Photodiode for G e n eral-Purp ose Applications • High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm


    OCR Scan     		PDF 3D30blD DDD01DS C30817 C30817

    rca 036

    Abstract: C30957E photodiode demodulation
    Text: £ I G t & G/CANADA/OPTOELEK c / 3D30bl0 OOGGISS SbM H C A N A ID Photodiode C30957E DATA SHEET Optics l T - W n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm


    OCR Scan     		PDF 3030bl0 C30957E C30957E ED-0032/10/88 rca 036 photodiode demodulation

    ELLS 110

    Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
    Text: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module


    OCR Scan     		PDF 3D30bl0 00D0141 C30919E 0-27SI ELLS 110 avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E

    C30642E

    Abstract: rca 514 C30618 C30619 C30641 C30642 T018 el 85
    Text: E G & G/CANADA/OPTOELEK ^ V n l l fl i f J f 1 I ID ]> • E le c tr o O p tic s 'T ^ £/ / 'S 3 3D30bl0 OODDDTD DÔ6 ■ CANA Photodiodes C30618, C30619, C30641, C30642 ¥ -


    OCR Scan     		PDF C30618, C30619, C30641, C30642 ED-0020/03/88 C30642E rca 514 C30618 C30619 C30641 C30642 T018 el 85

    250BG

    Abstract: No abstract text available
    Text: E G & 6/CANADA/0PT0ELEK 47E 3D30blü I> 0QD030f l 4 • CANA UV Series -V /-5 1 Features • • • • Planar Diffused Structure Oxide Passivated Wide Spectral Range Flat Noise Spectrum to DC • Linearity Over Wide Dynamic Range Peak Responsivity: 0.62 A /W at 900 Nanometers


    OCR Scan     		PDF 3D30blà 0QD030f UV-040BG UV-040BQ UV-100BG UV-100BQ UV-215BG UV-215BQ UV-250BG UV-250BQ 250BG

    quadrant photodiode rca

    Abstract: No abstract text available
    Text: E 6 & 6/CANAD A/O PTOELEK ID 303Dbl0 GDQ0143 IME « C A N A D ÆM Electro n • I v i I Photodiode C30927E DATA SHEET Optics % Quadrant Silicon Avalanche Photodiodes for Tracking Applications Optical Characteristics Full Angle for Totally illuminated Photosensitive S u r fa c e .


    OCR Scan     		PDF 303Dbl0 GDQ0143 C30927E C30927E-03 C30927E-02 C30927E-01 VP-104 C30927E-01, C30927E-02, C30927E-03 quadrant photodiode rca

    SIECOR Fiber Optic cable

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK ^ M7E D • 3ü3DblG OGDOE^ EGzG OPTOELECTRONICS h ■ CANA C86075E& C86082E Series - n v / ' O i C86082E Series C86075E Series The EG&G series of 1300 nm LEDs are edge emitting InGaAsP


    OCR Scan     		PDF C86075E& C86082E C86075E ED-0050/12/90 SIECOR Fiber Optic cable

    C30817

    Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
    Text: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —


    OCR Scan     		PDF 3030bl0 C30954E, C30955E, C30956E C30954E C30955E Range--40Â C30817 s915 C30872 C30955E tic 1060 C30956E s914 C30916E 92LS-S916

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELÊK BOBOblD ODDOESb Q • CANA 850 nm Quantum Well 7^ : Pulsed Laser Series DATA SHEET C86083E - High power pulsed laser in a coaxial package T O peration at 50ns pulse duration and 3 kH z repetition rate H igh P eak O utput Pow er: 10W @ 17 A


    OCR Scan     		PDF C86083E

    Untitled

    Abstract: No abstract text available
    Text: E G & G/ CANADA/ OPTOELEK 47E D • 3030L10 GD00312 b ■ PDA Series_ CANA t -V/-55 Features • • Linearity Over Wide Dynamic Range Cross Talk Between Elements <1% • Wide Spectral Range • Planar Diffused Structure Operating Data and Specifications at 23°C


    OCR Scan     		PDF 3030L10 GD00312 -V/-55

    SG2007A

    Abstract: SG2004A 3G30b 904nm SG2006A M9002 SG2002A SG2007 SG2010A SG2012A
    Text: E G & G/CANADA/OPTOELEK IO D • Æ M Electro ■ m m V ^ IO D t ic s 3 G 3 0 b l 0 0 0 0 0 0 7 0 2 TT ■iCAJ^IA-p.‘/ SG2000A Series GaAs Pulsed Lasers DATA SHEET 904 nm Gallium Arsenide Injection Lasers for Pulsed Operation Small Emitting Areas Variants With Reverse-Case Polarity are Available


    OCR Scan     		PDF 3G30bl0 QD0G070 SG2000A SG2012A 42S8R6 VS-117 SG2012A SG2007A SG2004A 3G30b 904nm SG2006A M9002 SG2002A SG2007 SG2010A

    C30617E

    Abstract: C30616E ingaas LED 5-1304 C86013E C30986E C86054E C86057E-13 C86057E-13-TC C86057E-14
    Text: E G 8. G / C A N A D A / O P T O E L E K ItCJI 10E D • 3030blD OOQQOn A ■ CANA "H’ Electro InGaAsP Infrared Emitters Optics 1300 nm LED SERIES DATA SHEET C86057E SERIES - D u al-in -L in e p ack ag e S in g le o r m u ltim o d e fiber C86013E C86054E


    OCR Scan     		PDF 3030blG C86013E C86054E 1300nm 1300nm) C30616E, C30617E C30986E C86054E C30616E ingaas LED 5-1304 C86057E-13 C86057E-13-TC C86057E-14

    S86021E

    Abstract: corning fiber optic S989 rca 628 RCA Solid State RCA Solid State power devices GaAs 850 nm Infrared Emitting Diode LPJ-100 S86018E S86017E
    Text: E G 8. G / C A N A D A / O P T O E L E K I t C 10E 3D3Gbl G D 0000D23 Electro Optics and Devices i l T ICANA Infrared Emitters S86017E, S86018E S86020E,S86021E S86017E S86018E u 1 High-Speed Gallium Aluminum Arsenide IR-Emitters for Continuous or Pulse Applications


    OCR Scan     		PDF S86017E, S86018E S86020E S86021E S86017E S86020E S86018E L-977 L-999 S86021E corning fiber optic S989 rca 628 RCA Solid State RCA Solid State power devices GaAs 850 nm Infrared Emitting Diode LPJ-100 S86017E

    Untitled

    Abstract: No abstract text available
    Text: G S C/CANADA/OPTOELEK 10E C • 3030bl0 0000051 ICANA 1 C86006E. C86010E GaAlAs Injection Lasers Developmental Types 820 nm Gallium Aluminum Arsenide Injection Lasers for CW or Pulsed Operation With Integral Fiber Optic Cables and Connectors RCA developm ental types C86006E


    OCR Scan     		PDF 3030bl0 C86006E. C86010E C86006E C86006E, C86007E,

    RCA 4046

    Abstract: RCA Solid State rca 036 C30948E 3ls543sr1
    Text: F f & g/CANADA/OPTOELEK id ]> • 3 Q 3 0 b l 0 □□□□□40 SSE « C A N A Solid State Detectors n n n ElectroOpt.cs I m U P w l and Devices Developm ental TvDe C30948E Photodiode Silicon Avalanche Photodiode Having Very High Modulation Capability ■ High Quantum Efficiency 85% typical at 830 and 900 nm


    OCR Scan     		PDF 3Q30bl0 C30948E C30948E KLS-S223R1 543SR1 RCA 4046 RCA Solid State rca 036 3ls543sr1