2sk2365
Abstract: MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 2SK3058-ZJ PHB24N03LT 2SJ328
Text: N & P CHANNEL HIGH POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 3A TO 60A, AND POWER RATING UP TO 75W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 900V UP TO 100V N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BUK464-200A BUK465-200A BUK466-200A
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2SK2983-ZJ
2SK2984-ZJ
2SK3056-ZJ
2SK2411-ZJ
2SK2513-ZJ
2SK2499-ZJ
2SK3058-ZJ
2SK3060-ZJ
2SK3062-ZJ
2SJ302-ZJ
2sk2365
MTB23P60E
TO-263AB
2sk2134
2SJ series
NEC 2sJ302
2SJ302
PHB24N03LT
2SJ328
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2sk4005
Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321
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2SK301
2SK302
2SK303
2SK304
2SK308
2SK309
2SK310
2SK311
2SK312
2SK313
2sk4005
2SK385
2SK332
2SK339
2SK309
2SK400
2SK336
2SK386
2sk317
2SK354
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Untitled
Abstract: No abstract text available
Text: IC MOSFET SMD Type Product specification 2SK3022 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15
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2SK3022
O-252
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2SK3022
Abstract: No abstract text available
Text: IC MOSFET SMD Type Silicon N-Channel Power F-MOSFET 2SK3022 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80
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2SK3022
O-252
2SK3022
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2SK3022
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3022 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage
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2SK3022
2SK3022
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2SK3036
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm
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2SK3036
2SK3036
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2SK3029
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage
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2SK3029
2SK3029
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage
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2SK3036
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2SK3029
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage
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2SK3029
2SK3029
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2SK3036
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage
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2SK3036
2SK3036
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2SK3036
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm
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2SK3036
2SK3036
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2SK3022
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3022 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage
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2SK3022
2SK3022
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage
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2SK3029
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2SK3029
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage
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2SK3029
2SK3029
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2SK3029
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage
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2SK3029
2SK3029
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japan 8622
Abstract: 2SK3093LS
Text: 2SK3093LS Ordering number : EN8622 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3093LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.
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2SK3093LS
EN8622
150described
japan 8622
2SK3093LS
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japan 8622
Abstract: 2SK3093LS
Text: 2SK3093LS Ordering number : EN8622 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3093LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.
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2SK3093LS
EN8622
PW10s,
japan 8622
2SK3093LS
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage
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2SK3036
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2SK3049
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 4.2±0.2 ● Contactless relay
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2SK3049
O-220D
2SK3049
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TA-3081
Abstract: 2SK3092
Text: Ordering number : ENN6788 2SK3092 N-Channel Silicon MOSFET 2SK3092 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Low Qg. unit : mm 2083B [2SK3092] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source
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ENN6788
2SK3092
2083B
2SK3092]
2092B
TA-3081
2SK3092
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2SK3043
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2
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2SK3043
100mJ
O-220D
2SK3043
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2SK3048
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 4.2±0.2 ● Contactless relay
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2SK3048
O-220D
2SK3048
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2SK3035
Abstract: 2A DIODE
Text: Power F-MOS FETs 2SK3035 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage
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2SK3035
2SK3035
2A DIODE
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2SK3049
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 4.2±0.2 ● Contactless relay
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2SK3049
O-220D
2SK3049
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