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    3CS TRANSISTOR Search Results

    3CS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3CS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 3cs

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation PCM : 300 mW(Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -50


    Original     		PDF OT-363 BC857S OT-363 -10mA -100mA -10mA 100MHz 200Hz marking 3cs

    C2373

    Abstract: Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor
    Text: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code


    Original     		PDF Q62702-C2373 OT-363 May-12-1998 C2373 Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor

    5b1 transistor

    Abstract: transistor 5B1 H12E
    Text: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-363 Q62702-2373 Jan-20-1997 5b1 transistor transistor 5B1 H12E

    BC857S

    Abstract: VPS05604
    Text: BC857S PNP Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		PDF BC857S VPS05604 EHA07175 OT363 Peak30V EHP00381 EHP00380 Nov-29-2001 BC857S VPS05604

    BC857S

    Abstract: VPS05604
    Text: BC857S PNP Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		PDF BC857S VPS05604 EHA07175 OT363 EHP00381 EHP00380 Aug-20-2001 EHP00382 BC857S VPS05604

    VPS05604

    Abstract: No abstract text available
    Text: BC 857S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604


    Original     		PDF VPS05604 EHA07175 OT-363 EHP00381 EHP00380 Nov-08-1999 EHP00382 EHP00379 VPS05604

    MARKING 3cs

    Abstract: No abstract text available
    Text: BC857S PNP Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		PDF BC857S VPS05604 EHA07175 OT363 MARKING 3cs

    MARKING 3cs

    Abstract: No abstract text available
    Text: BC857S PNP Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		PDF BC857S VPS05604 EHA07175 OT363 MARKING 3cs

    sot363 marking DATE code

    Abstract: marking AF BC856S BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: BC856S/U EHA07175 BC856S OT363 BC856U sot363 marking DATE code marking AF BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363

    transistor marking 6c1

    Abstract: No abstract text available
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: EHA07175 BC856U transistor marking 6c1

    Untitled

    Abstract: No abstract text available
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: EHA07175 BC856U

    WD90C11A

    Abstract: 3C503 schematic diagram cga to vga converter 3cs12 WD90C11 transistor m014 Transistor 2N2222A equivalent integrated circuit 74LS151 Western digital 8514 interfacing of RAM and ROM with 8088
    Text: WD90C11IWD90C11A TABLE OF CONTENTS Section Title 1.0 INTRODUCTION 1.1 Document Scope 1.2 Features 1.3 General Description 13-1 13-1 13-1 13-2 2.0 WD90C11 A ARCHITECTURE 2.1 WD90C11 (A) Modules . 13-3 13-3 3.0 WD90C11 (A) INTERFACES 3.1 CPU and BIOS ROM Interface


    Original     		PDF WD90C11IWD90C11A WD90C11 WD90C11A 3C503 schematic diagram cga to vga converter 3cs12 WD90C11 transistor m014 Transistor 2N2222A equivalent integrated circuit 74LS151 Western digital 8514 interfacing of RAM and ROM with 8088

    Untitled

    Abstract: No abstract text available
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: BC856S/U EHA07175 BC856S OT363 BC856U

    transistor marking 6c1

    Abstract: transistor marking E2 3Ds SOT363
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: EHA07175 BC856U transistor marking 6c1 transistor marking E2 3Ds SOT363

    transistor BC 339

    Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: EHA07175 BC856U transistor BC 339 TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564

    CRTC 6845

    Abstract: WD90C33 pin diagram of LED dot matrix display 32x32 PARADISE 80486 interface EQUIVALENCE CMOS 4047 vlsi 386sx PARADISE VGA cga video 6845 Western digital 8514
    Text: D A'U 5-11 E ET WD90C33 High Performance VGA Controller ~ WESTERN DIGITAL Copyright 1993 Western Digital Corporation All Rights Reserved Information furnished by Western Digital Corporation is believed to be accurate and reliable. However, no responsibility is assumed by Western Digital Corporation for its use; nor for any infringements of


    Original     		PDF WD90C33 68x2230) 68x2201) 68x2260) WD9DC33 P0409 CRTC 6845 WD90C33 pin diagram of LED dot matrix display 32x32 PARADISE 80486 interface EQUIVALENCE CMOS 4047 vlsi 386sx PARADISE VGA cga video 6845 Western digital 8514

    transistors BC 543

    Abstract: TRANSISTOR BC 748 transistor BC 543
    Text: SIEMENS BC 857S PNP Silicon A F Transistor Array • For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage •Two galvanic internal isolated Transistors in one package 3Cs lil Lit L±J Pin Configuration


    OCR Scan     		PDF Q62702-2373 OT-363 fiS35bD5 235LD5 BC857S 0535bD5 012Dbl3 transistors BC 543 TRANSISTOR BC 748 transistor BC 543

    marking Ht SOT-363

    Abstract: 3h250 FT12E 3cs transistor
    Text: SIEMENS BC 857S PNP Silicon AF Transistor Array >For AF input stages and driver applications 1High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package ^ F I H "•> <>« i- n - i u Ordering Code


    OCR Scan     		PDF Q62702-C2373 OT-363 marking Ht SOT-363 3h250 FT12E 3cs transistor

    3cs transistor

    Abstract: marking 3cs 6c2 transistor PS056
    Text: SIEMENS BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications A • High current gain 5_ O ^ • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package


    OCR Scan     		PDF PS05604 Q62702-C2373 OT-363 Mav-12-1998 3cs transistor marking 3cs 6c2 transistor PS056

    2N956

    Abstract: 2N718A N718A
    Text: 3QE D • 7^5 3 7 aoaioa? 5 ■ T~- 3 5 -ic] SGS-THOMSON 2 N 718A 2 N 956 iO L iO IT G M O O S S G S-THOMSON AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N718A and 2N956 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, inten­ ded for high-speed switching and amplifier applica­


    OCR Scan     		PDF 2N718A 2N956 N718A

    TS280-A89Z

    Abstract: No abstract text available
    Text: TS280—A89Z December 1989 FUJITSU DATA SHEET • MB82B71-15/-20 64K BIT HIGH SPEED BI-CMOS SRAM 65,536-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B71 is a 65,536 words by 1 bits static random access memory fabricated with a


    OCR Scan     		PDF TS280-- MB82B71-15/-20 536-WORD MB82B71 300mil 24-LEAD LCC-24P-M02) TS280-A89Z

    Untitled

    Abstract: No abstract text available
    Text: TCD5130AC GENERAL TCD5130AC is a fram e interline CCD area image sensor developed fo r a 3-CCD color camera PAL/SECA M TV system . This device has signal pixels of 754 (horizontal) x 583 (vertical), and its image size agrees w ith 2 / 3 inch type optical system.


    OCR Scan     		PDF TCD5130AC TCD5130AC

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x106rad 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 n.m Process (Lelf = 0.65}im) • Read/Write Cycle Times


    OCR Scan     		PDF HX6409 HX6218 HX6136 1x10U 1x109