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    4142 TS Search Results

    4142 TS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LPS4414-223MLB Coilcraft Inc General Purpose Inductor, 22uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, ROHS COMPLIANT Visit Coilcraft Inc
    LPS4414-222MRB Coilcraft Inc General Purpose Inductor, 2.2uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    LPS4414-224MRB Coilcraft Inc General Purpose Inductor, 220uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    LPS4414-222MLC Coilcraft Inc General Purpose Inductor, 2.2uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, ROHS COMPLIANT Visit Coilcraft Inc
    LPS4414-224MRC Coilcraft Inc General Purpose Inductor, 220uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
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    4142 TS Price and Stock

    Infineon Technologies AG ITS4142N

    Power Switch ICs - Power Distribution SMART HI SIDE SWITCH INDUSTRIAL APPS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ITS4142N 33,928
    • 1 $3.01
    • 10 $1.96
    • 100 $1.55
    • 1000 $1.07
    • 10000 $0.933
    		Buy Now

    Infineon Technologies AG BTS4142NHUMA1

    Power Switch ICs - Power Distribution SMART HI-SIDE PWR SWITCH 1-CH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BTS4142NHUMA1 25,697
    • 1 $2.01
    • 10 $1.55
    • 100 $1.34
    • 1000 $1.22
    • 10000 $1.13
    		Buy Now

    Infineon Technologies AG ITS4142NHUMA1

    Power Switch ICs - Power Distribution SMART HI SIDE SWITCH INDUSTRIAL APPS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ITS4142NHUMA1 14,372
    • 1 $1.88
    • 10 $1.4
    • 100 $1.18
    • 1000 $1.04
    • 10000 $0.933
    		Buy Now

    Infineon Technologies AG BTS4142N

    Power Switch ICs - Power Distribution SMART HI-SIDE PWR SWITCH 1-CH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BTS4142N 13,531
    • 1 $3.55
    • 10 $2.34
    • 100 $1.88
    • 1000 $1.28
    • 10000 $1.13
    		Buy Now

    Molex 41422-5001

    Molex TERMINAL 14-18 REEL STRIP OF 100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 41422-5001
    • 1 -
    • 10 -
    • 100 $0.134
    • 1000 $0.134
    • 10000 $0.134
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    4142 TS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC* MMBT4126 14E D | 7^4142 0Q072tfl Q | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cotlector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		MMBT4126 0Q072tfl PDF

    Untitled

    Abstract: No abstract text available
    Text: SD275SE30A/B/C SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4142, Rev A SILICON SCHOTTKY RECTIFIER DIE Ultra Low Forward Voltage Drop Typical Voltage Drop 0.30V Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode


    Original     		SD275SE30A/B/C PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 m E D ^7=^4142 Q0G?aci 4 1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		MMBTA43 OT-23 PDF

    IRFr010

    Abstract: No abstract text available
    Text: FEATURES D-PACK Lower R d s ON Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 0012315 • • • • • • • 7^4142


    OCR Scan     		IRFR010/12/14/15 IRFU010/12/14/15 IRFR010/U010 IRFR01 2/U012 IRFR014/U014 IRFR015/U015 IRFR010/012 IRFR014/015 IRFU010/012 IRFr010 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage


    OCR Scan     		KSB596 KSD526 GQG77fe PDF

    JE2955

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS MJD2955 INC 42E D B 7^4142 OOCHOS'i 3 • SHGK PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • Lead Formed for Surface Mount Applications No Suffix


    OCR Scan     		MJD2955 JE2955 JE2955 PDF

    Untitled

    Abstract: No abstract text available
    Text: S AMSUNG ELECTRONICS INC MMBT3904 M5E D B 7=^4142 ODGTGBT b El NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25°C C h a ra cte ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		MMBT3904 OT-23 PDF

    samsung 822

    Abstract: IRFS820 N 821 Diode IRFS821 IRFS822 IRFS823 GG173
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7=^4142 001737^ bib I suste N-CHANNEL POWER MOSFETS IRFS820/821/822/823 FEATURES TO-220F • Lower R ds ON • Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		IRFS820/821/822/823 to-220f IRFS820/821Z822/823 IRFS820 IRFS821 IRFS822 IRFS823 samsung 822 N 821 Diode GG173 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR I NC MMBT6427 1ME D | 7^4142 0 0 0 7 2 8 4 •*1 | 'f-Z '? . NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		MMBT6427 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMI CONDUCTOR INC MMBT5550 14E D 17^4142 0007502 S .J NPN EPITAXIAL SILICON TRANSISTOR - ;— H IG H VOLTAGE TRANSISTO R ' T - a SOT.23 q - R ~ A BSO LUTE M A X IM U M RATINGS Ta= 2 5 ° C


    OCR Scan     		MMBT5550 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MPS8598 IME D | 7^4142 DQim qO PNP EPITAXIAL SILICON TRANSISTOR T -29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ceo=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Vbltage


    OCR Scan     		MPS8598 625mW PDF

    TI41

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D m 7^4142 KM64B258A 0017500 ITT SMGK BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.)


    OCR Scan     		KM64B258A 110mA KM64B258AJ-8: 185mA KM64B258AJ-10: 175mA KM64B258AJ-12: 165mA KM64B258AJ: 28-pin TI41 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC MMBT5401 M2E D • 7^4142 0 0 C H Û 4 7 S ■ SMGK PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage ■


    OCR Scan     		MMBT5401 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC fa7E D • 7^4142 KM44C1OOOBSL DDlSbfi? bSO ■ SMGK CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM44C1000BSL-6 tRAC tCAC tRC 60ns 15ns 110ns KM44C1000BSL-7 70ns 20ns


    OCR Scan     		KM44C1OOOBSL KM44C1000BSL-6 110ns KM44C1000BSL-7 130ns KM44C1000BSL-8 150ns cycles/256ms 20-LEAD 0Q157G5 PDF

    Untitled

    Abstract: No abstract text available
    Text: 42E D SAMSUNG ELECTRONICS INC 7=^4142 DDDTDbS 7 M SM CK NPN EXITAXIAL SILICON TRANSISTOR M PSA44 'T - 'r 7 - i s HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic. Collector-Base Voltage , Colleotor-Emitter Voltage ‘ • Emitter-Base Voltage


    OCR Scan     		PSA44 MPSA44 PDF

    JE3055

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS MJD3055 INC 42E D B 7^4142 000=1031 1 OSÍ1GK NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • « • • • Lead Formed for Surface Mount Applications No Suffix


    OCR Scan     		MJD3055 JE3055 500mA 300/tS, MJD30S5 G00TD32 T-33-Ã JE3055 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMI CONDUCTOR 14E INC D 1 7^4142 QÜG7323 4 T - ¿ 7 - i MPS6513 ! NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V ceo=30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		G7323 MPS6513 625mW 2N3904 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E » • DG17D77 GTD ■ SriGK PRELIMINARY 7^4142 KM23V16100A CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152X 8 bit organization • Fast access tim e: 200ns(max.) • Supply voltage: single+3V or +3.3V


    OCR Scan     		DG17D77 KM23V16100A 16M-Bit 200ns 36-pin, KM23V16100A KM23V16100A) PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D KA2220 S 7^4142 0 0 0 =120 0 S E3SMÛK LINEAR INTEGRATED CIRCUIT 'T - 'n - T A EQUALIZER AMPLIFIER WITH ALC The KA2220 Is a monolithic integrated circuit consisting of a preamplifier and ALC circuit for cassette tape recorders


    OCR Scan     		KA2220 KA2220 7U4142 PDF

    IRFS730

    Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		7Rb414B IRFS730/731/732/733 to-220f IRFS730/731 /732Z733 IRFS730 IRFS731 IRFS732 IRFS733 733 mosfet 731 MOSFET IR 733 0D173 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM SPECIFICATION REVISION HISTORY REV. NO. 0.0 SUMMARY DATE Initial Release 1997. 1. 29 • • • » • • • • • • • • Rev 0.0 ELECTRONICS • 7^4142 00372^7 AIT PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM


    OCR Scan     		KM732V696/L 64Kx32 732V696/L 152-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUN6 ELECTRONICS INC b4E D • 7^4142 KMM5362000B1/B1G 0G14b47 G67 ■ SflGK DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000B1 is a 2M bits x 36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM5362000B1/B1G 0G14b47 KMM5362000B1 20-pin 72-pin 22/xF KMM5362000B1-6 110ns PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 b 74 0014^11 DRAM MODULES KMM5404100/G 4MX40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5404100-6 • • • • • • • Irac tcAC tue 60ns 15ns 110ns KM M5404100-7 70ns 20ns


    OCR Scan     		KMM5404100/G 4MX40 110ns M5404100-7 130ns KMM5404100-8 KMM5404100 24-pin 72-pin PDF

    syrelec 4541

    Abstract: crouzet 4541 syrelec ts 4142 Syrelec Crouzet ts 4141 syrelec C 106 Syrelec 100 crouzet
    Text: 4141 / 4142 Preselection up/down counters, LCD, 48 x48 • ■ ■ ■ ■ ■ Presets and scale factor easy to alter Large back-lit LCD display unit Simultaneous display of current value and preset Safeguarded : good resistance to interference Backed up on EEPRÔM memory


    OCR Scan     		PDF