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    4142 TS Search Results

    4142 TS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LPS4414-223MLB Coilcraft Inc General Purpose Inductor, 22uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, ROHS COMPLIANT Visit Coilcraft Inc
    LPS4414-222MRB Coilcraft Inc General Purpose Inductor, 2.2uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    LPS4414-224MRB Coilcraft Inc General Purpose Inductor, 220uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    LPS4414-222MLC Coilcraft Inc General Purpose Inductor, 2.2uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, ROHS COMPLIANT Visit Coilcraft Inc
    LPS4414-224MRC Coilcraft Inc General Purpose Inductor, 220uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
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    4142 TS Price and Stock

    Infineon Technologies AG ITS4142N

    Power Switch ICs - Power Distribution SMART HI SIDE SWITCH INDUSTRIAL APPS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ITS4142N 33,928
    • 1 $3.01
    • 10 $1.96
    • 100 $1.55
    • 1000 $1.07
    • 10000 $0.933
    		Buy Now

    Infineon Technologies AG BTS4142NHUMA1

    Power Switch ICs - Power Distribution SMART HI-SIDE PWR SWITCH 1-CH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BTS4142NHUMA1 25,697
    • 1 $2.01
    • 10 $1.55
    • 100 $1.34
    • 1000 $1.22
    • 10000 $1.13
    		Buy Now

    Infineon Technologies AG ITS4142NHUMA1

    Power Switch ICs - Power Distribution SMART HI SIDE SWITCH INDUSTRIAL APPS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ITS4142NHUMA1 14,372
    • 1 $1.88
    • 10 $1.4
    • 100 $1.18
    • 1000 $1.04
    • 10000 $0.933
    		Buy Now

    Infineon Technologies AG BTS4142N

    Power Switch ICs - Power Distribution SMART HI-SIDE PWR SWITCH 1-CH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BTS4142N 13,531
    • 1 $3.55
    • 10 $2.34
    • 100 $1.88
    • 1000 $1.28
    • 10000 $1.13
    		Buy Now

    Molex 41422-5001

    Molex TERMINAL 14-18 REEL STRIP OF 100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 41422-5001
    • 1 -
    • 10 -
    • 100 $0.134
    • 1000 $0.134
    • 10000 $0.134
    		Get Quote

    4142 TS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    JB marking transistor

    Abstract: transistor marking JB MMBT5550 marking JB
    Text: SAMSUNG SEMICONDUCTOR INC MMBT5550 14E D | 7*^4142 0007505 S. J NPN EPITAXIAL SILICON TRANSISTOR -HIGH VOLTAGE TRANSISTOR T-jq-R ' SOT.23 ~ ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic


    OCR Scan     		MMBT5550 10/iA, JB marking transistor transistor marking JB marking JB PDF

    KM28C64A-20

    Abstract: KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25
    Text: SAMSUNG ELECTRONICS INC D • 7^4142 OOlböfiO TSS SflGK CMOS EEPROM KM28C64A/KM28C65A 8 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64AJ65A: Commercial — KM28C64AK65AI: Industrial • Simple Byte Write & Page Write


    OCR Scan     		KM28C64A/KM28C65A KM28C64A/65A: KM28C64AK65AI: KM28C65A) 64-Byte 120ns 7Tb4142 KM28C64A/KM28C65A KM28C64A-20 KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC* MMBT4126 14E D | 7^4142 0Q072tfl Q | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cotlector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		MMBT4126 0Q072tfl PDF

    2N6515

    Abstract: 2N6516
    Text: SAMSUNG SEMICONDUCTOR INC 2N6516 14E D | 7^4142 00071^ 1 | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISOTR • Collector-Emitter Voltage: Vcto=300V * Collector Dlssipatioh: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic


    OCR Scan     		2N6516 625mW 2N6515 T-29-21 100mA, 20MHz 2N6515 PDF

    transistor

    Abstract: Samsung Semiconductor
    Text: r 7 [ SAMSUNG SEMICONDUCTOR INC MMBC1623L3 m e o § 7^4142 0007am, i | NPN EPITAXIAL SILICON TRANSISTOR — : -' T AMPLIFIER TRANSISTOR - a R - - SO T-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage


    OCR Scan     		0007am, MMBC1623L3 transistor Samsung Semiconductor PDF

    Untitled

    Abstract: No abstract text available
    Text: SD275SE30A/B/C SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4142, Rev A SILICON SCHOTTKY RECTIFIER DIE Ultra Low Forward Voltage Drop Typical Voltage Drop 0.30V Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode


    Original     		SD275SE30A/B/C PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 m E D ^7=^4142 Q0G?aci 4 1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		MMBTA43 OT-23 PDF

    2929 transistor

    Abstract: MMBT6427 MMBTA14 SOT-23 J
    Text: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7^4142 OGt^eT! t | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		0075T1 MMBTA14 MMBT6427 T-29-29 OT-23 100jjA, 2929 transistor SOT-23 J PDF

    MMBC1009F1

    Abstract: No abstract text available
    Text: SAM SUNG SEMICONDUCTOR INC MMBC1009F1 l^ E D | 7*ìfc.4142 00G723? | NPN EPITAXIAL SILICON TRANSISTOR1~ ^ AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic' Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		00G723? MMBC1009F1 OT-23 MMBC1009F1 PDF

    IRFr010

    Abstract: No abstract text available
    Text: FEATURES D-PACK Lower R d s ON Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 0012315 • • • • • • • 7^4142


    OCR Scan     		IRFR010/12/14/15 IRFU010/12/14/15 IRFR010/U010 IRFR01 2/U012 IRFR014/U014 IRFR015/U015 IRFR010/012 IRFR014/015 IRFU010/012 IRFr010 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage


    OCR Scan     		KSB596 KSD526 GQG77fe PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 I ME D | 7^4142 00G723G fl | PNP EPITAXIAL SILICON TRANSISTOR T DRIVER TRANSISTOR - & - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-B ase Voltage Vc8 0 50 V CoHector-Emltter Voltage


    OCR Scan     		00G723G MMBA811C7 OT-23 PDF

    it4142

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC 14E D | ? it,4142 GOOtfllb 0 | KSA952 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION PT=600 mW High Hfe and LOW VCE<sat) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C ) Characteristic Symbol Collector-Base Voltage


    OCR Scan     		KSA952 it4142 PDF

    JE2955

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS MJD2955 INC 42E D B 7^4142 OOCHOS'i 3 • SHGK PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • Lead Formed for Surface Mount Applications No Suffix


    OCR Scan     		MJD2955 JE2955 JE2955 PDF

    ic LM 356 equivalent

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MPS5172 IME D I 7^4142 0007321 0 I T ~ * J ~ 2 ,/ NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTÖR • Collector-Em itter Voltage: Veto =25V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		MPS5172 625mW MPSA10 ic LM 356 equivalent PDF

    hfe1

    Abstract: KSA952 PT-600
    Text: SAMSUNG SEMICONDUCTOR INC 14E D | ?i t , 4142 KSA952 GOOtfllb | PNP SILICON TRANSISTOR GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION PT=600 mW High Hf e and LOW V CE < sat) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Sym bol Collector-Base Voltage


    OCR Scan     		KSA952 -100mA -700mA 700mA, 350ns, hfe1 PT-600 PDF

    dj audio transistor

    Abstract: KSB708 t-33-f KSB707 KSD568 ksb744
    Text: SAMSUNG SEMICONDUCTOR INC KSB707 14E 0 I 7*^4142 0007500 S I T ? 1 - / 7 - PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POW&R AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO-220 • Complement to KSD568 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic


    OCR Scan     		KSB707 KSD568 O-220 00G7S14 KSB744/744A T-33-17 dj audio transistor KSB708 t-33-f KSD568 ksb744 PDF

    samsung 822

    Abstract: IRFS820 N 821 Diode IRFS821 IRFS822 IRFS823 GG173
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7=^4142 001737^ bib I suste N-CHANNEL POWER MOSFETS IRFS820/821/822/823 FEATURES TO-220F • Lower R ds ON • Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		IRFS820/821/822/823 to-220f IRFS820/821Z822/823 IRFS820 IRFS821 IRFS822 IRFS823 samsung 822 N 821 Diode GG173 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR I NC MMBT6427 1ME D | 7^4142 0 0 0 7 2 8 4 •*1 | 'f-Z '? . NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		MMBT6427 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMI CONDUCTOR INC MMBT5550 14E D 17^4142 0007502 S .J NPN EPITAXIAL SILICON TRANSISTOR - ;— H IG H VOLTAGE TRANSISTO R ' T - a SOT.23 q - R ~ A BSO LUTE M A X IM U M RATINGS Ta= 2 5 ° C


    OCR Scan     		MMBT5550 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MPS8598 IME D | 7^4142 DQim qO PNP EPITAXIAL SILICON TRANSISTOR T -29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ceo=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Vbltage


    OCR Scan     		MPS8598 625mW PDF

    TI41

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D m 7^4142 KM64B258A 0017500 ITT SMGK BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.)


    OCR Scan     		KM64B258A 110mA KM64B258AJ-8: 185mA KM64B258AJ-10: 175mA KM64B258AJ-12: 165mA KM64B258AJ: 28-pin TI41 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC MMBT5401 M2E D • 7^4142 0 0 C H Û 4 7 S ■ SMGK PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage ■


    OCR Scan     		MMBT5401 OT-23 PDF

    KM28C64-20

    Abstract: KM28C65-20 KM28C64 KM28C64I-20 KM28C64-25
    Text: SAMSUNG SEMICONDUCTOR INC 7^4142 23E D 00DÛ333 1 CMOS EEPROM KM28C64/KM28C65 T ""4 8 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64/KM28C65: Commercial — KM28C64I/KM28C65I: Industrial • Simple Byte Write


    OCR Scan     		KM28C64/KM28C65 KM28C64/KM28C65: KM28C64I/KM28C65I: KM28C6S) 32-byte 150ps/byte 200ns 100/iA-- 30mA-- KM28C64-20 KM28C65-20 KM28C64 KM28C64I-20 KM28C64-25 PDF