KM416C256-7
Abstract: No abstract text available
Text: PRELIMINARY CMOS DRAM KM416C256 2 5 6 K X 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 6 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random A ccess M emory. Its design is optimized for high perform ance applications
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KM416C256
130ns
180ns
40-LEAD
KM416C256-7
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416C256J
Abstract: 416c
Text: PRELIMINARY KM416C256 CMOS DRAM 2 5 6 K X 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 6 C 2 5 6 is a CMOS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random A ccess Memory. Its design is optimized for high performance applications
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KM416C256
6C256J
416C256J
416c
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KM41C1000BJ
Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C1000BJ
KM44C256BP
KM41C1000BP
KM41C1001BP
KM44C256BJ
km4164
KM44C1000LJ
KM41C464Z
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