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    48BA Search Results

    48BA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJHSEE48BA1 Amphenol Communications Solutions Modular Jack - Right Angle, Input Output Connectors 8P8C, Right Angle, With shield, with LEDs.. Visit Amphenol Communications Solutions
    RJHSEG48BA1 Amphenol Communications Solutions Modular Jack - Right Angle, Input Output Connectors 8P8C, Right Angle, With shield, with LEDs.. Visit Amphenol Communications Solutions
    RJHSE548BA1 Amphenol Communications Solutions Modular Jack - Right Angle, Input Output Connectors 8P8C, RA, Shield, With LEDs. Visit Amphenol Communications Solutions
    RJHSEJ48BA1 Amphenol Communications Solutions Modular Jack - Right Angle, Input Output Connectors 8P8C, Right Angle, With shield, with LEDs.. Visit Amphenol Communications Solutions
    AM6548BACDXEAF Texas Instruments Quad Arm® Cortex®-A53 and dual Arm Cortex-R5F Sitara™ processor with gigabit PRU-ICSS, 3D graphics 784-FCCSP -40 to 105 Visit Texas Instruments
    SF Impression Pixel

    48BA Price and Stock

    Maxim Integrated Products MAX5048BATT-T

    IC GATE DRVR LOW-SIDE 6TDFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MAX5048BATT-T Cut Tape 6,875 1
    • 1 $10.2
    • 10 $7.096
    • 100 $5.4016
    • 1000 $4.4849
    • 10000 $4.4849
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    MAX5048BATT-T Digi-Reel 6,875 1
    • 1 $10.2
    • 10 $7.096
    • 100 $5.4016
    • 1000 $4.4849
    • 10000 $4.4849
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    MAX5048BATT-T Reel 5,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $4.4125
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    KEMET Corporation B-20L-48B-A

    NI-ZN BEAD, COATED 2.4MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B-20L-48B-A Tray 4,960 1
    • 1 $1.76
    • 10 $1.213
    • 100 $0.84413
    • 1000 $0.605
    • 10000 $0.605
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    TME B-20L-48B-A 100
    • 1 -
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    • 100 $1.09
    • 1000 $0.81
    • 10000 $0.81
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    Avnet Abacus B-20L-48B-A 27 Weeks 30,000
    • 1 -
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    PanJit Group MMBZ5248B-AU_R1_000A1

    SURFACE MOUNT SILICON ZENER DIOD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBZ5248B-AU_R1_000A1 Cut Tape 2,980 1
    • 1 $0.11
    • 10 $0.073
    • 100 $0.11
    • 1000 $0.03327
    • 10000 $0.03327
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    Micron Technology Inc MT60B2G8HB-48B:A-TR

    DDR5 16G 2GX8 FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT60B2G8HB-48B:A-TR Cut Tape 2,877 1
    • 1 $20.63
    • 10 $18.314
    • 100 $16.2517
    • 1000 $14.94396
    • 10000 $14.94396
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    MT60B2G8HB-48B:A-TR Digi-Reel 2,877 1
    • 1 $20.63
    • 10 $18.314
    • 100 $16.2517
    • 1000 $14.94396
    • 10000 $14.94396
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    PanJit Group BC848B-AU_R1_000A1

    SOT-23, TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BC848B-AU_R1_000A1 Cut Tape 2,711 1
    • 1 $0.11
    • 10 $0.073
    • 100 $0.11
    • 1000 $0.03327
    • 10000 $0.03327
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    Find more 48BA price and stock on Findchips.com

    48BA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns


    Original     		PDF BS62LV1600 115mA R0201-BS62LV1600 220uA 100uA 110uA

    CY14B101LA-SZ45XI

    Abstract: CY14B101LA-SZ25XI
    Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small


    Original     		PDF CY14B101LA CY14B101NA 8/64K CY14B101LA/CY14B101NA CY14B101LA-SZ45XI CY14B101LA-SZ25XI

    AT49BV802A

    Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		PDF 3405E AT49BV802A AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W19B320AT/B w19b320

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		PDF 3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom

    S 3590A

    Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout


    Original     		PDF

    bga 6x8

    Abstract: bga 6x8 Package A64E06161 A64E06161G
    Text: A64E06161 1M X 16 Bit Low Voltage Super RAMTM Preliminary Features n Common I/O using three-state output n Support 3 distinct operation modes for reducing standby power : Reduced Memory Size Operation 4M,8M,12M,16M Partial Array Refresh (4M,8M,12M) Deep Power Down Mode


    Original     		PDF A64E06161 48-ball A64E06161 I/O10 I/O11 I/O12 I/O14 I/O13 I/O15 A64E06161G bga 6x8 bga 6x8 Package A64E06161G

    TIB0

    Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
    Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


    Original     		PDF K9F6408Q0C K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D TIB0 K9F6408Q0C K9F6408Q0C-B K9F6408U0C-B K9F6408U0C-QCB0

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original     		PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    TE28F640J3C-120

    Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
    Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective


    Original     		PDF 28F128J3, 28F640J3, 28F320J3 x8/x16) 32-Byte 128-bit --64-bit High-Densi8/x16 56-Lead TE28F640J3C-120 TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability

    SST39LF512

    Abstract: SST39LF010 SST39LF020 SST39LF040 SST39VF010 SST39VF020 SST39VF040 SST39VF512
    Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet


    Original     		PDF SST39LF512 SST39LF010 SST39LF020 SST39LF040 SST39VF512 SST39VF010 SST39VF020 SST39VF040 SST39LF/VF512 512Kb SST39LF040 SST39VF040

    MX23L3213

    Abstract: MX23L3213TC-12 MX23L3213TC-70 MX23L3213TC-90 MX23L3213TI-10 MX23L3213TI-70 MX23L3213TI-90 tsop 48 PIN
    Text: MX23L3213 32M-BIT MASK ROM FEATURES PIN DESCRIPTION • Bit organization - 4M x 8 byte mode - 2M x 16 (word mode) • Fast access time - Random access:70ns(max.) • Current - Operating:16mA - Standby:5uA • Supply voltage - 2.7V ~ 3.6V • Package - 48 pin TSOP (12mm x 20mm)


    Original     		PDF MX23L3213 32M-BIT D15/A-1 JUN/29/2005 MX23L3213 MX23L3213TC-12 MX23L3213TC-70 MX23L3213TC-90 MX23L3213TI-10 MX23L3213TI-70 MX23L3213TI-90 tsop 48 PIN

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    A29L800

    Abstract: A29L800V
    Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.


    Original     		PDF A29L800 KbyteX15 KwordX15 48TFBGA) A29L800V

    smd transistor HB

    Abstract: LP62S16128B-T
    Text: LP62S16128B-T Series 128K X 16 BIT LOW VOLTAGE CMOS SRAM Features n Operating voltage: 2.7V to 3.6V n Access times: 55/70 ns max. n Current: Very low power version: Operating: 55ns 40mA (max.) 70ns 35mA (max.) Standby: 10µA (max.) n n n n n Full static operation, no clock or refreshing required


    Original     		PDF LP62S16128B-T 44-pin 48-ball MO192 smd transistor HB

    Untitled

    Abstract: No abstract text available
    Text: RENESAS LSIs 2003.08.21 Ver. 7.0 M5M5V416CWG -55HI, -70HI 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's


    Original     		PDF M5M5V416CWG -55HI, -70HI 4194304-BIT 262144-WORD 16-BIT) 262144-words 16-bit, M5M5V416C

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    AS6C1016

    Abstract: sram 64k 64k x 8 sram
    Text: OCTOBER 2007 January 2007 AS6C1016 X 8CMOS BIT LOW POWER CMOS SRAM 64K X 16 BIT LOW512K POWER SRAM FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 20mA TYP. Standby current : 2 A (TYP.) Single 2.7V ~ 5.5V power supply


    Original     		PDF AS6C1016 44-pin 48-ball AS6C1016 576-bit OCTOBER/2007, sram 64k 64k x 8 sram

    BGA-48-0608

    Abstract: BH616UV1611
    Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1611 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V The BH616UV1611 is a high performance, ultra low power CMOS y Ultra low power consumption :


    Original     		PDF BH616UV1611 BH616UV1611 55/70ns R0201-BH616UV1611 BGA-48-0608

    BGA-48-0608

    Abstract: BH616UV8011
    Text: Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit BH616UV8011 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V y Ultra low power consumption : Operation current : 12mA Max. at 55ns


    Original     		PDF BH616UV8011 x8/x16 R0201-BH616UV8011 TSOP1-48 BGA-48-0608 BH616UV8011

    lv8011

    Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
    Text: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout


    Original     		PDF 1265E 01/00/xM lv8011 AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T

    A12C

    Abstract: A14C A15C CY62127V
    Text: CY62127V V CYPRESS 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq


    OCR Scan     		PDF CY62127V 44-pin CY62127V A12C A14C A15C

    Untitled

    Abstract: No abstract text available
    Text: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from


    OCR Scan     		PDF Am29DL800B 8-Bit/512 16-Bit) Am29DL800 FBB048.

    Untitled

    Abstract: No abstract text available
    Text: / A M D il A m 2 9 L V 0 1 7 B 16 Megabit 2 M x 8-Bit CM O S 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • S in g le p o w e r s u p p ly o p e ra tio n ■ Embedded Algorithms — Full voltage range: 2.7 to 3.6 volt read and write


    OCR Scan     		PDF 16-038-TSOP-1 TSR040--40-Pin 16-038-TSOP-1 TSR040 Am29LV017B FGC048--48-Ball 16-038-FGC-2