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Vishay Intertechnologies PR03000202009JAC00 Metal Film Resistors - Through Hole 3watts 20ohms 5%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	PR03000202009JAC00		1,339			1 $0.73 10 $0.301 100 $0.214 1000 $0.124 10000 $0.124	Buy Now
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5093NW20R00J Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G2225X7R225KT3AB Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6	PDF
NIPPON CAPACITORS Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi	PDF
MRF6VP11KH Abstract: J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 0, 1/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical	Original	MRF6VP11KH MRF6VP11KHR6 MRF6VP11KH J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101	PDF
ATC100B151J Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.	Original	MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT	PDF
TUI-lf-9 Abstract: ATC700B392JT50X Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched	Original	MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X	PDF
MRF6VP2600H Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 100fficers, MRF6VP2600H ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6	PDF
MRF6VP2600KH Abstract: TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H 20ficers, MRF6VP2600HR6 MRF6VP2600KH TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw	PDF
MRF6VP2600H Abstract: T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.	Original	MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT	PDF
mrf6vp2600h Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.	Original	MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H	PDF