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    50N100 Search Results

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    50N100 Price and Stock

    Rochester Electronics LLC FGA50N100BNTTU

    IGBT, 50A, 1000V, N-CHANNEL
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    DigiKey FGA50N100BNTTU Tube 1,652 116
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    • 1000 $2.6
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    onsemi NXH350N100H4Q2F2P1G-R

    GEN1.5 1500V MASS MARKET
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    DigiKey NXH350N100H4Q2F2P1G-R Tray 72 1
    • 1 $246.61
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    Avnet Americas NXH350N100H4Q2F2P1G-R Tray 36
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    Mouser Electronics NXH350N100H4Q2F2P1G-R 36
    • 1 $282.94
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    Newark NXH350N100H4Q2F2P1G-R Bulk 36
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    Avnet Silica NXH350N100H4Q2F2P1G-R 16 Weeks 12
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    EBV Elektronik NXH350N100H4Q2F2P1G-R 17 Weeks 12
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    Flip Electronics NXH350N100H4Q2F2P1G-R 2,088
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    onsemi NXH350N100H4Q2F2S1G-R

    GEN1.5 1500V MASS MARKET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NXH350N100H4Q2F2S1G-R Tray 72 1
    • 1 $253.88
    • 10 $253.88
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    Avnet Americas NXH350N100H4Q2F2S1G-R Tray 36
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    Mouser Electronics NXH350N100H4Q2F2S1G-R
    • 1 $291.27
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    Newark NXH350N100H4Q2F2S1G-R Bulk 36
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    EBV Elektronik NXH350N100H4Q2F2S1G-R 17 Weeks 12
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    onsemi NXH350N100H4Q2F2P1G

    IC PWR MODULE 1000V 350A PIM42
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    DigiKey NXH350N100H4Q2F2P1G Tray 36 1
    • 1 $154.22
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    • 100 $150.89833
    • 1000 $150.89833
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    Avnet Americas NXH350N100H4Q2F2P1G Tray 36
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    • 1000 $154.52019
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    Mouser Electronics NXH350N100H4Q2F2P1G 6
    • 1 $154.22
    • 10 $150.89
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    Newark NXH350N100H4Q2F2P1G Bulk 36 1
    • 1 $169.18
    • 10 $164.24
    • 100 $146.95
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    Avnet Silica NXH350N100H4Q2F2P1G 5,832 15 Weeks 12
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    EBV Elektronik NXH350N100H4Q2F2P1G 15 Weeks 12
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    New Advantage Corporation NXH350N100H4Q2F2P1G 7,338 1
    • 1 $311.67
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    • 100 $311.67
    • 1000 $311.67
    • 10000 $288.41
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    onsemi NXH350N100H4Q2F2S1G

    IC PWR MODULE 1000V 350A PIM42
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    DigiKey NXH350N100H4Q2F2S1G Tray 28 1
    • 1 $157.41
    • 10 $157.41
    • 100 $154.49918
    • 1000 $154.49918
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    Avnet Americas NXH350N100H4Q2F2S1G Tray 36
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    • 100 $177.98299
    • 1000 $158.2071
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    Mouser Electronics NXH350N100H4Q2F2S1G
    • 1 $170.6
    • 10 $154.5
    • 100 $154.49
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    Newark NXH350N100H4Q2F2S1G Bulk 36 1
    • 1 $180.12
    • 10 $174.84
    • 100 $164.36
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    EBV Elektronik NXH350N100H4Q2F2S1G 15 Weeks 12
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    Find more 50N100 price and stock on Findchips.com

    50N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N100

    Abstract: 50N120 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623
    Text: Advanced Technical Information IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A IGBT with Reverse Blocking capability VCE sat = 2.5 V tf = 75 ns C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol


    Original     		PDF 50N120 50N100 O-247 50N120 50N100 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623

    rr0805

    Abstract: RGR07 RNC60H Resistor 22 ohms rb60 resistor MIL-R-39007 rr1206 MIL-R-26 RW79 MIL-R-26 MIL-R-39005 RR2512
    Text: Product Approvals - CECC Type Specification Style MFR3 MFR3 MFR4 MFR4 MFR5 MFR5 BS CECC 40101-019 GX GZ FX FZ EX EZ 1R0 1R 01R0 1R0 9R1 9R1 - MFR4 MFR4 MFR5 MFR5 BS CECC 40101-803 BK BC CK CC 10R 10R 9R1 9R1 FA025 FA05 FA1 FA94 BS CECC 40101-019 FX EX DX CX


    OCR Scan     		PDF FA025 50n-100K 2-121Kfl 100i2-100Kn 2-100K 2-100KC2 2-100KQ MIL-R-55342 M55342/6 rr0805 RGR07 RNC60H Resistor 22 ohms rb60 resistor MIL-R-39007 rr1206 MIL-R-26 RW79 MIL-R-26 MIL-R-39005 RR2512

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan     		PDF 9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


    OCR Scan     		PDF DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100