BUK453-50B
Abstract: BUK453-50A R2d DIODE BUK453 T0220AB buk453 50B
Text: BUK453-50A BUK453-50B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK453-50A
BUK453-50B
BUK453
T0220AB;
M89-1138/RST
BUK453-50B
BUK453-50A
R2d DIODE
T0220AB
buk453 50B
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BUK455-50A
Abstract: BUK455-50B buk455 15 1E41 DPP100-24 T0220AB
Text: Philips Components BUK455-50A BUK455-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is Intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-50A
BUK455-50B
BUK455
M89-1155/RC
BUK455-50A
BUK455-50B
15 1E41
DPP100-24
T0220AB
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BUK553-50B
Abstract: BUK553-50A buk553 T0220 PACKAGE buk553 T0220AB 50A POWER TRANSISTOR FOR SMPS
Text: Philips Components BUK553-50A BUK553-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK553-50A
BUK553-50B
BUK553
M89-1153/RC
BUK553-50B
BUK553-50A
T0220 PACKAGE buk553
T0220AB
50A POWER TRANSISTOR FOR SMPS
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Untitled
Abstract: No abstract text available
Text: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53131
0D50445
BUK453-50A
BUK453-50B
BUK453
inK453-50A
T-39-n
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PDF
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BUK543
Abstract: BUK543-50A BUK543-50B
Text: N AMER PHILIPS/DISCRETE SSE D ODEQSÖQ 1 BUK543-50A BUK543-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK543-50A
BUK543-50B
BUK543
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PDF
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t100c
Abstract: BUK452-50A BUK452-50B T0220AB
Text: N AMER PHILIPS/DISCRETE 2SE D • btS3*131 002D430 4 ■ PowerMOS transistor BUK452-50A BUK452-50B T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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002DM3Ã
BUK452-50A
BUK452-50B
BUK452
t100c
BUK452-50B
T0220AB
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DD 127 D TRANSISTOR
Abstract: BUK443-50B BUK443 BUK443-50A TRANSISTOR K 135 J 50
Text: N AMER PHIL IP S/D ISCRETE 2SE D ^53^31 G0E0345 2 PowerMOS transistor BUK443-50A BUK443-50B T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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G0E0345
BUK443-50A
BUK443-50B
BUK443
ID/100
DD 127 D TRANSISTOR
BUK443-50B
TRANSISTOR K 135 J 50
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BUK452-50A
Abstract: BUK452-50B T0220AB
Text: N AMER PHI LIP S/ DI SCRETE btS3*131 002DM3Ü 4 2SE D BUK452-50A BUK452-50B PowerMOS transistor T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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002D43G
BUK452-50A
BUK452-50B
BUK452
ID/100
T0220AB
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PDF
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buk443
Abstract: KYW 30 40 diode
Text: 5SE D N AMER P H I L IPS/DISCRETE m bbS3T31 0020345 2 PowerMOS transistor BUK443-50A BUK443-50B T - 3 ^ -0 7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3T31
BUK443-50A
BUK443-50B
BUK443
T-39-09
buk443
KYW 30 40 diode
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PDF
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BUK542
Abstract: BUK542-50A BUK542-50B 1-B-03
Text: N AMER PHILIPS/DISCRETE: 5SE D • bbB3T31 0G2G5fe.5 S ■ PowerMOS transistor Logic Level FET BUK542-50A BUK542-50B T~ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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bbS3T31
002Q5t
BUK542-50A
BUK542-50B
BUK542
1-B-03
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ^ SSE D 53=131 0 0 2 0 4 3 0 4 BUK452-50A BUK452-50B PowerMOS transistor T-37-IJ GENERAL DESCRIPTION SYMBOL > « O N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK452-50A
BUK452-50B
T-37-IJ
BUK452
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Untitled
Abstract: No abstract text available
Text: N AflER P H IL IP S /D IS CRETE 2SE D • bbS3T31 0Q2D330 0 ■ PowerMOS transistor BUK442-50A BUK442-50B r-39-o <? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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bbS3T31
0Q2D330
BUK442-50A
BUK442-50B
r-39-o
BUK442
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E 55E D ooso4fls ? BUK455-50A BUK455-50B PowerMOS transistor r-s ^ -/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK455-50A
BUK455-50B
BUK455
bbS3T31
777ali
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PDF
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BUK453-50B
Abstract: 1B05 BUK453-50A 1B-05 T0220AB D0504 buk453 bfa53
Text: N AUER P H I L I P S / D I S C R E T E 25E D • bbSBTBl 0020445 b PowerMOS transistor BUK453-50A BUK453-50B T-3^-}| GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bfa53T31
0G20445
BUK453-50A
BUK453-50B
BUK453
ID/100
1B05
1B-05
T0220AB
D0504
bfa53
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 25E D ^53=131 0D20240 T • BUK426-50A BUK426-50B PowerMOS transistor G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies
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0D20240
BUK426-50A
BUK426-50B
BUK426
0Q2QE44
1E-02
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PDF
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BUK545-50A
Abstract: 1E05 BUK545 BUK545-50B
Text: N AMER PHILIPS/DISCRETE 5 SE D • fc.hS3T31 DDEOSTQ 4 ■ PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r - 3 7 -< 0 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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h53T31
BUK545-50A
BUK545-50B
BUK545
ID/100
1E05
BUK545-50B
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PDF
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BUK545-50A
Abstract: BUK545 BUK545-50B
Text: N AMER PH IL IP S/ DISCR ET E 5SE D fc>h53T31 DDEOSTQ 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r -3 7 -,3 < 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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h53T31
BUK545-50A
BUK545-50B
BUK545
ID/100
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PDF
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BUK543-50A
Abstract: BUK543 BUK543-50B
Text: N AMER P HI LI PS /D IS CRE TE SSE D ODEQSÖQ 1 B U K 543-50A B U K 543-50B PowerMOS transistor Logic Level FET QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK543-50A
BUK543-50B
BUK543
BUK543-50B
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PDF
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BUK445
Abstract: SO-020 417K BUK445-50A BUK445-50B
Text: N AMER P H I L I P S / D I S C R E T E SSE D • bbSBiai 00SD3aS 3 ■ PowerMOS transistor BUK445-50A BUK445-50B T -3 7 -0 ? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK445-50A
BUK445-50B
T-37-0?
BUK445
ID/100
SO-020
417K
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHIL I P S / D I S CR E T E 5SE D fc.b53^31 DDEOSTO 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r-3 i- o i GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK545-50A
BUK545-50B
BUK545
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PDF
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BUK555-50A
Abstract: BUK555-50B T0220AB 418 NDS
Text: N AMER PHILIPS/DISCRETE SSE J> bfciS3ci31 0 D 2 0 t 3 S m G • PowerMOS transìstor Logic Level FET BUK555-50A BUK555-50B N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bfaS3T31
0D20t3S
BUK555-50A
BUK555-50B
BUK555
BUK555-50B
T0220AB
418 NDS
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PDF
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BUK456-50A
Abstract: BUK456 N25Y 15 1E41 BUK456-50B T0220AB
Text: N AMER P H I L I P S / D I S C R E T E 25E D • k b S 3 c131 002ÜSE0 5 ■ BUK456-50A BUK456-50B PowerMOS transistor T - 3 T - 13 GENERAL DESCRIPTION N-channel enhancement mode field-etfect power transistor in a plastic envelope. The device is intended for use in
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BUK456-50A
BUK456-50B
BUK456
N25Y
15 1E41
T0220AB
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PDF
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BUK455-50A
Abstract: BUK455 BUK455-50B T0220AB
Text: N AMER P H I L I P S / D I S C R E T E SSE D m Ljfci53ci31 O G S O M a S 7 • PowerMOS transistor BUK455-50A BUK455-50B T-31-Ì3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bfci53cÃ
BUK455-50A
BUK455-50B
BUK455
-ID/100
T0220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: ^ 33= 131 0 0 2 0 5 2 0 25E D N AMER P H I L I P S / D I S C R E T E S BUK456-50A BUK456-50B PowerMOS transistor T - 3^-13 GENERAL DESCRIPTION SYM BO L Cfl Q > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK456-50A
BUK456-50B
BUK456
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