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    3M Interconnect 665-1-2-X1296-

    SCOTCH DOUBLE SIDED TAPE 665 1/2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 665-1-2-X1296- Bulk 72
    • 1 -
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    • 100 $8.67389
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    • 10000 $8.67389
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    The Bergquist Company CPU-.005--12--X-12-

    THERM PAD 304.8MMX304.8MM TAN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CPU-.005--12--X-12- 18
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    • 100 $46.46
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    3M 3M-RP25-12--X-12--2

    TAPE DBL SIDED GRAY 12"X12"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3M-RP25-12--X-12--2 Bulk 2
    • 1 -
    • 10 $52.43
    • 100 $52.43
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    3M 3M-RP45-12--X-12--2

    TAPE DBL SIDED GRAY 12"X12"
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    DigiKey 3M-RP45-12--X-12--2 Bulk 2
    • 1 -
    • 10 $54.07
    • 100 $54.07
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    3M 8926-025-12--X-12--5

    THERM PAD 304.8 X 304.8MM 1=1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 8926-025-12--X-12--5 Bulk 1
    • 1 $17.49
    • 10 $13.334
    • 100 $10.3898
    • 1000 $8.30394
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    512X12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    font ram 16x8

    Abstract: yh 4100 GU256X128C-3900B GU256X128C-3900 GU256X32 Font 16x32 dot font NORITAKE GU256x64 512X128 gu256x16
    Text: GU256X128C-3900 GU256X128C-3900B Comparison Chart DOCUMENT NO. DATE OF ISSUE REVISION PUBLISHED BY Noritake Co., Inc. : E-M-0044-00 : April 15, 2011 : : Noritake Co., Inc. East Coast 2635 Clearbrook Drive New Jersey Arlington Height, IL 60005 888 296 – 3423


    Original     		GU256X128C-3900 GU256X128C-3900B E-M-0044-00 E-M-0044-00 128x128 256x16 256x32 256x64 font ram 16x8 yh 4100 GU256X32 Font 16x32 dot font NORITAKE GU256x64 512X128 gu256x16 PDF

    K4R571669A-FCK8

    Abstract: K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9
    Text: Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.11( September 2001) - Preliminary


    Original     		K4R571669A/K4R881869A 256/288Mbit 16/18bit 1066MHz 260mV 300mV 800MHz 1066MHz 256/288Mb) K4R571669A-FCK8 K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9 PDF

    Sony IMX 183

    Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
    Text: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1


    Original     		PDF

    direct rdram rambus 1200

    Abstract: No abstract text available
    Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


    Original     		600MHz DL-0118-07 direct rdram rambus 1200 PDF

    da53

    Abstract: DB26 0195c Outline T39
    Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other


    Original     		512Kx16/18x32s) 600MHz DL-0118-010 da53 DB26 0195c Outline T39 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16401 Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401 is a high speed, low power and 4M bit full CMOS SRAM organized as 262,144 words by 16bit. The HY62UF16401 uses high performance full CMOS process technology and designed for high speed low power circuit


    Original     		HY62UF16401 256Kx16bit 16bit. 48ball 5M-1994. PDF

    SM-1994

    Abstract: No abstract text available
    Text: HY62UF16201 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201 is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62UF16201 uses high performance full CMOS process technology and designed for high speed low power circuit


    Original     		HY62UF16201 128Kx16bit 16bit. 48ball SM-1994. SM-1994 PDF

    p714h

    Abstract: p804h EDM160160-05 SED1330 P650H SED1335 TA 7217 AP 160X160 SAD 512 p120h
    Text: LCM 使用手册 EDM160160-05 液晶显示器模块 原理与应用手册 大连东显电子有限公司 地址: 邮编: 电话: 传真: 大连开发区哈尔滨路 25-1 号 116600 0411 7612956 7631122 7612955 (0411)7612958 第 1 页 共 41页 大连东显电子有限公司


    Original     		EDM160160-05 96hrs p714h p804h EDM160160-05 SED1330 P650H SED1335 TA 7217 AP 160X160 SAD 512 p120h PDF

    diode t29

    Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
    Text: PRELIMINARY DATA SHEET 288M bits Direct Rambus  DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including


    Original     		EDR2518ABSE EDR2518AB EDR2518AB 1066MHz 288Mbits 800MHz 9375ns M01E0107 diode t29 EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E PDF

    da53

    Abstract: DB26 BE1210 DB62 ROP10
    Text: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 512Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application


    Original     		256/288-Mbit 512Kx16/18x32s) 256/288-Mbit 600MHz 800MHz DL0060 DL0060 da53 DB26 BE1210 DB62 ROP10 PDF

    Untitled

    Abstract: No abstract text available
    Text: K4R881869A for short channel 1066 MHz Direct RDRAM 288Mbit RDRAM A-die 512K x 18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R881869A for short channel 1066 MHz Direct RDRAM™ Change History Version 1.11( September 2001) - Preliminary


    Original     		K4R881869A 288Mbit 18bit 1066MHz 260mV 300mV 288Mb) PDF

    PIC16F816

    Abstract: PIC16F86 pic16f877a full instruction set program for pic16c54c digital clock RFID pic16f876 PIC16F73 Bootloader 4mhz crystal to pic16f877 PCM16XC0 FUNCTION circuit pic16f874 pic16f84a
    Text: PRODUCT LINE CARD Including Development Tools FIRST QUARTER 2001 CURRENT MICROCHIP PRODUCT LINE PICmicro MICROCONTROLLER FAMILY PRODUCTS Program Memory Analog Digital MAX Speed BOR/ CCP/ Serial I/O MHz ICSPTM PBOR PLVD ECCP Timers/WDT PIC12CXXX: 400ns Instruction Execution, 33/35 Instructions, 8-Pin Package, 4MHz Internal Oscillator, 4/5 Oscillator Selections


    Original     		PIC12CXXX: 400ns PIC12C508A 512x12 PIC12C509A 1024x12 PIC12CR509A PIC12CE518 PIC16F816 PIC16F86 pic16f877a full instruction set program for pic16c54c digital clock RFID pic16f876 PIC16F73 Bootloader 4mhz crystal to pic16f877 PCM16XC0 FUNCTION circuit pic16f874 pic16f84a PDF

    chip yx 801

    Abstract: yx 801 yx 801 ic yx 801 4 pin IC yx 801
    Text: PF829-03 SRM20V512SLMX7 512K-Bit Static RAM ge lta o V n w tio Lo pera cts O odu Pr ● Wide Temperature Range ● Low Supply Current ● Access Time 70ns ● 65,536 wordsx8 bit Asynchronous • DESCRIPTION The SRM20V512SLMX7 is a 65,536 words×8-bit asynchronous, static, random access memory on a monolithic


    Original     		PF829-03 SRM20V512SLMX7 512K-Bit SRM20V512SLMX7 chip yx 801 yx 801 yx 801 ic yx 801 4 pin IC yx 801 PDF

    PIC16 example code spi slave

    Abstract: PIC16 example c code i2c master PIC16FR57 18-SO 25c010 pcd8572 ic 24C16B pic16c154 pcd8582 ds00148b2
    Text: MI CR OC ON TR OL LE RS PRODUCT LINE CARD MEMORY PRODUCTS AP S PL TA I N CA D TI AR O D N PR SP O EC D IF U IC C TS SECOND QUARTER 1997 The Embedded Control Solutions Company PIC16/17 8-BIT MICROCONTROLLER FAMILY Program Memory OTP Product Bytes Words Data


    Original     		PIC16/17 PIC12CXXX 1000ns PIC12C508 512x12 PIC12C509 DS00148B2 PIC16 example code spi slave PIC16 example c code i2c master PIC16FR57 18-SO 25c010 pcd8572 ic 24C16B pic16c154 pcd8582 ds00148b2 PDF

    PIC16F867

    Abstract: PIC16F866 PIC16F825 PIC16F787 93C76 wp FUZZY pic MICROCONTROLLER pwm PIC16F877 and pwm generator pic16c17 PIC16C177 PIC16C555
    Text: MI CR OC ON TR OL LE RS PRODUCT LINE CARD AP MEMORY PRODUCTS S PL TA I N CA D TI AR O D N PR SP O EC D IF U IC C TS SECOND QUARTER 1998 The Embedded Control Solutions Company PICmicro 8-BIT MICROCONTROLLER FAMILY Product Program Memory OTP E2PROM Data


    Original     		PIC12CXXX 400ns PIC12C508 512x12 DS00148C2 PIC16F867 PIC16F866 PIC16F825 PIC16F787 93C76 wp FUZZY pic MICROCONTROLLER pwm PIC16F877 and pwm generator pic16c17 PIC16C177 PIC16C555 PDF

    bft10

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan     		TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-400-1 44-P-400-0 bft10 PDF

    Untitled

    Abstract: No abstract text available
    Text: & PIC16C5X Microchip EPROM-Based 8-Bit CMOS Microcontroller Series FEATURES High-Performance RISC-like CPU • Only 33 single word instructions to leam • All single cycle instructions 200ns except for program branches which are two-cycle • Operating speed: DC - 20 MHz clock input


    OCR Scan     		PIC16C5X 200ns) 200ns 12-bit DS30015K-page PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664BJ/BFT-1Q,-12 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 65,536-W ORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as


    OCR Scan     		TC55V1664BJ/BFT-1Q 16-BIT TC55V1664BJ/BFT 10172M7 TC55V1664BJ/BFT-10 PDF

    PIC1672

    Abstract: RC522 PIC1670 PIC1655A PIC1650A PIC1654 L103201 pic single phase inverter VDO RD3 SF237
    Text: millllllllllH lllql II •: M I C R O C H I P TECHNOLOGY INC S3 D • — bl03201 — OODBMSS fi ■ 1 INTRODUCTION 1 .1 . . . " Descnption The General Instrument PIC Family is a series of MOS/LSI 8-bit microcomputers manufactured to meet the requirements of the costcompetitive controller market. The PIC microcomputer contains


    OCR Scan     		bl03201 PIC1656 PIC1670 PIC1672 RC522 PIC1655A PIC1650A PIC1654 L103201 pic single phase inverter VDO RD3 SF237 PDF

    SRM20W116LLTT2

    Abstract: SRM20W116LLTT7
    Text: EPSON PF869-03 SRM20W116 LLTT2/7 1M-Bit Static RAM • • • • Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V / 70ns(2.7V) 65,536 Words X16-Bit Asynchtonous Wide Temperature Range DESCRIPTION The SRM20W116LLTT2/7 is a 65,536 words x16-bit asynchronous, random access memory on a monolithic


    OCR Scan     		PF869-03 SRM20W116LLTT2/7 120ns X16-Bit SRM20W116LLTT2/7 -44pin 740ma> 125toos SRM20W116LLTT2 SRM20W116LLTT7 PDF

    SRM21016LLTT12

    Abstract: 8ie22
    Text: PF865-01 EPSON SRM21016LLTT i2 1 M-Bit Static RAM • W ide Voltage Operation and Low Current Consumption • Access Tim e 120ns 2.7V • 65,536 Words X 16-Bit Asynchtonous • W ide Tem perature Range I D E S C R IP T IO N The SRM21016LLTT12 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic


    OCR Scan     		PF865-01 SRM21016LLTT12 120ns 16-Bit SRM21016LLTT12 -44pin 740ma> -44pin-R1 8ie22 PDF

    V52C8128

    Abstract: V52C8128-80
    Text: MOSEL- VITELIC V52C8128 MULTIPORT VIDEO RAM WITH 128K X 8 DRAM AND 256 X 8 SAM HIGH PERFORMANCE V52C8128 70 PRELIMINARY 80 10 Max. RAS Access Time, tRAc 70 ns 80 ns 100 ns Max. CAS Access Time, (tcAc) 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t ^ )


    OCR Scan     		V52C8128 V52C8128 V52C8128-80 PDF

    MJL 2194

    Abstract: 16LC54A-04 MJL 2194 transistor 2162 20-pin qfp ScansUX7 16CR58A 6C58 PIC16C54A 2176 PIC16CR57A
    Text: M ENHANCED PIC16C5X ic r o c h ip EPROM/ROM-Based 8-Bit CMOS Microcontroller Series Devices Included in this Data Sheet Package Types • PIC16C54A • PIC16C58A • PIC16CR58A • PIC16CR57A High-Performance RISC-like CPU • Only 33 single word instructions to learn


    OCR Scan     		PIC16C5X PIC16C54A PIC16C58A PIC16CR58A PIC16CR57A PIC16C54A PIC16C58A PIC16CR58A 12-bit MJL 2194 16LC54A-04 MJL 2194 transistor 2162 20-pin qfp ScansUX7 16CR58A 6C58 2176 PDF

    HY6316100

    Abstract: No abstract text available
    Text: H Y 6 3 1 6 1 O O A S /H Y 6 3 1 6 1 O O A L •HYUNDAI 64Kx16bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY6316100 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16-bits. The HY6316100 uses sixteen common input and output lines and has an output enable pin


    OCR Scan     		64Kx16bit HY6316100 576-bit 16-bits. 15/20/25ns HY6316100AS 44pin 400mil PDF