font ram 16x8
Abstract: yh 4100 GU256X128C-3900B GU256X128C-3900 GU256X32 Font 16x32 dot font NORITAKE GU256x64 512X128 gu256x16
Text: GU256X128C-3900 GU256X128C-3900B Comparison Chart DOCUMENT NO. DATE OF ISSUE REVISION PUBLISHED BY Noritake Co., Inc. : E-M-0044-00 : April 15, 2011 : : Noritake Co., Inc. East Coast 2635 Clearbrook Drive New Jersey Arlington Height, IL 60005 888 296 – 3423
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GU256X128C-3900
GU256X128C-3900B
E-M-0044-00
E-M-0044-00
128x128
256x16
256x32
256x64
font ram 16x8
yh 4100
GU256X32
Font 16x32 dot font
NORITAKE
GU256x64
512X128
gu256x16
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K4R571669A-FCK8
Abstract: K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9
Text: Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.11( September 2001) - Preliminary
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K4R571669A/K4R881869A
256/288Mbit
16/18bit
1066MHz
260mV
300mV
800MHz
1066MHz
256/288Mb)
K4R571669A-FCK8
K4R881869A-FCK8
K4R881869A-FCM8
K4R881869A-FCM9
K4R881869A-FCN9
K4R881869A-FCT9
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Sony IMX 183
Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
Text: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1
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direct rdram rambus 1200
Abstract: No abstract text available
Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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600MHz
DL-0118-07
direct rdram rambus 1200
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da53
Abstract: DB26 0195c Outline T39
Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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512Kx16/18x32s)
600MHz
DL-0118-010
da53
DB26
0195c
Outline T39
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Untitled
Abstract: No abstract text available
Text: HY62UF16401 Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401 is a high speed, low power and 4M bit full CMOS SRAM organized as 262,144 words by 16bit. The HY62UF16401 uses high performance full CMOS process technology and designed for high speed low power circuit
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HY62UF16401
256Kx16bit
16bit.
48ball
5M-1994.
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SM-1994
Abstract: No abstract text available
Text: HY62UF16201 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201 is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62UF16201 uses high performance full CMOS process technology and designed for high speed low power circuit
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HY62UF16201
128Kx16bit
16bit.
48ball
SM-1994.
SM-1994
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p714h
Abstract: p804h EDM160160-05 SED1330 P650H SED1335 TA 7217 AP 160X160 SAD 512 p120h
Text: LCM 使用手册 EDM160160-05 液晶显示器模块 原理与应用手册 大连东显电子有限公司 地址: 邮编: 电话: 传真: 大连开发区哈尔滨路 25-1 号 116600 0411 7612956 7631122 7612955 (0411)7612958 第 1 页 共 41页 大连东显电子有限公司
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EDM160160-05
96hrs
p714h
p804h
EDM160160-05
SED1330
P650H
SED1335
TA 7217 AP
160X160
SAD 512
p120h
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diode t29
Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
Text: PRELIMINARY DATA SHEET 288M bits Direct Rambus DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including
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EDR2518ABSE
EDR2518AB
EDR2518AB
1066MHz
288Mbits
800MHz
9375ns
M01E0107
diode t29
EDR2518ABSE
EDR2518ABSE-8C-E
T45 to DB9
EDR2518ABSE-8C
EDR2518ABSE-AD
EDR2518ABSE-AE
EDR2518ABSE-AE-E
EDR2518ABSE-AEP
EDR2518ABSE-AEP-E
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da53
Abstract: DB26 BE1210 DB62 ROP10
Text: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 512Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application
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256/288-Mbit
512Kx16/18x32s)
256/288-Mbit
600MHz
800MHz
DL0060
DL0060
da53
DB26
BE1210
DB62
ROP10
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Untitled
Abstract: No abstract text available
Text: K4R881869A for short channel 1066 MHz Direct RDRAM 288Mbit RDRAM A-die 512K x 18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R881869A for short channel 1066 MHz Direct RDRAM™ Change History Version 1.11( September 2001) - Preliminary
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K4R881869A
288Mbit
18bit
1066MHz
260mV
300mV
288Mb)
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chip yx 801
Abstract: yx 801 yx 801 ic yx 801 4 pin IC yx 801
Text: PF829-03 SRM20V512SLMX7 512K-Bit Static RAM ge lta o V n w tio Lo pera cts O odu Pr ● Wide Temperature Range ● Low Supply Current ● Access Time 70ns ● 65,536 wordsx8 bit Asynchronous • DESCRIPTION The SRM20V512SLMX7 is a 65,536 words×8-bit asynchronous, static, random access memory on a monolithic
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PF829-03
SRM20V512SLMX7
512K-Bit
SRM20V512SLMX7
chip yx 801
yx 801
yx 801 ic
yx 801 4 pin
IC yx 801
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Untitled
Abstract: No abstract text available
Text: PF807-06 SRM21016LLTX12/15 1M-Bit Static RAM ge ltan o V w tio Loperauct O rod P ● Wide Voltage Operation and Low Current Consumption ● Access Time 120ns/150ns 2.7V ● 65,536 WordsX16-Bit Asynchtonous ● Wide Temperature Range • DESCRIPTION The SRM21016LLTX12/15 is a 65,536 wordsx16-bit asynchronous, random access memory on a monolithic
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PF807-06
SRM21016LLTX12/15
120ns/150ns
WordsX16-Bit
SRM21016LLTX12/15
SRM21016LL
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Untitled
Abstract: No abstract text available
Text: K4R881869A for short channel 1066 MHz Direct RDRAM 288Mbit RDRAM A-die 512K x 18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R881869A for short channel 1066 MHz Direct RDRAM™ Change History Version 1.11( September 2001) - Preliminary
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K4R881869A
288Mbit
18bit
1066MHz
260mV
300mV
288Mb)
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Untitled
Abstract: No abstract text available
Text: 1066 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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512Kx16/18x32s)
600MHz
DL-0118-050
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SM-1994
Abstract: A2000V
Text: HY62UF16100/ HY62QF16100/ HY62EF16100/ HY62SF16100 Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16100 / HY62QF16100 / HY62EF16100 / HY62SF16100 is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The
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HY62UF16100/
HY62QF16100/
HY62EF16100/
HY62SF16100
64Kx16bit
HY62UF16100
HY62QF16100
HY62EF16100
16bit.
SM-1994
A2000V
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Untitled
Abstract: No abstract text available
Text: K4R571669D K4R881869D for short channel 1066 MHz Direct RDRAM 256/288Mbit RDRAM D-die 512K x 16/18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R571669D K4R881869D for short channel 1066 MHz Direct RDRAM™
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K4R571669D
K4R881869D
256/288Mbit
16/18bit
92balls
Table19
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VDR 0047
Abstract: HY63V16100A
Text: HY63V16100A Series 64Kx16bit CMOS Fast SRAM PRELIMINARY DESCRIPTION FEATURES The HY63V16100A is a 1,048,576-bit high-speed, SRAM organized as 65,536 words by 16 bits. The HY63V16100A uses sixteen common input and output lines and has an output enable pin which
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HY63V16100A
64Kx16bit
576-bit
44pin
400mil
10MAX
004MAX
VDR 0047
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bft10
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
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TC55V1664BJ/BFT-10
536-WORD
16-BIT
TC55V1664BJ/BFT
SOJ44-P-400-1
44-P-400-0
bft10
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V1664BJ/BFT-1Q,-12 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 65,536-W ORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as
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TC55V1664BJ/BFT-1Q
16-BIT
TC55V1664BJ/BFT
10172M7
TC55V1664BJ/BFT-10
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SRM20W116LLTT2
Abstract: SRM20W116LLTT7
Text: EPSON PF869-03 SRM20W116 LLTT2/7 1M-Bit Static RAM • • • • Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V / 70ns(2.7V) 65,536 Words X16-Bit Asynchtonous Wide Temperature Range DESCRIPTION The SRM20W116LLTT2/7 is a 65,536 words x16-bit asynchronous, random access memory on a monolithic
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PF869-03
SRM20W116LLTT2/7
120ns
X16-Bit
SRM20W116LLTT2/7
-44pin
740ma>
125toos
SRM20W116LLTT2
SRM20W116LLTT7
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SRM21016LLTT12
Abstract: 8ie22
Text: PF865-01 EPSON SRM21016LLTT i2 1 M-Bit Static RAM • W ide Voltage Operation and Low Current Consumption • Access Tim e 120ns 2.7V • 65,536 Words X 16-Bit Asynchtonous • W ide Tem perature Range I D E S C R IP T IO N The SRM21016LLTT12 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic
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PF865-01
SRM21016LLTT12
120ns
16-Bit
SRM21016LLTT12
-44pin
740ma>
-44pin-R1
8ie22
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V52C8128
Abstract: V52C8128-80
Text: MOSEL- VITELIC V52C8128 MULTIPORT VIDEO RAM WITH 128K X 8 DRAM AND 256 X 8 SAM HIGH PERFORMANCE V52C8128 70 PRELIMINARY 80 10 Max. RAS Access Time, tRAc 70 ns 80 ns 100 ns Max. CAS Access Time, (tcAc) 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t ^ )
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V52C8128
V52C8128
V52C8128-80
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HY6316100
Abstract: No abstract text available
Text: H Y 6 3 1 6 1 O O A S /H Y 6 3 1 6 1 O O A L •HYUNDAI 64Kx16bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY6316100 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16-bits. The HY6316100 uses sixteen common input and output lines and has an output enable pin
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64Kx16bit
HY6316100
576-bit
16-bits.
15/20/25ns
HY6316100AS
44pin
400mil
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