520MH Search Results

520MH Price and Stock

Filter by Manufacturer


Rochester Electronics LLC LM10520MH-NOPB SWITCHING CONTROLLER, VOLTAGE-MO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LM10520MH-NOPB	Bulk	250		70	1 - 10 - 100 $4.31 1000 $4.31 10000 $4.31	Buy Now
Rochester Electronics LLC LM10520MHE-NOPB SWITCHING CONTROLLER, VOLTAGE-MO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LM10520MHE-NOPB	Bulk	250		82	1 - 10 - 100 $3.66 1000 $3.66 10000 $3.66	Buy Now
Abracon Corporation ASG-D-V-A-155.520MHZ XTAL OSC VCXO 155.5200MHZ LVDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ASG-D-V-A-155.520MHZ		22		1	1 $11.55 10 $9.971 100 $8.6214 1000 $7.4875 10000 $7.4875	Buy Now
Avnet Abacus	ASG-D-V-A-155.520MHZ			14 Weeks	250	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation ABLJO-V-155.520MHZ XTAL OSC VCXO 155.5200MHZ LVCMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ABLJO-V-155.520MHZ				10	1 - 10 $38.105 100 $38.105 1000 $38.105 10000 $38.105	Buy Now
Mouser Electronics	ABLJO-V-155.520MHZ		2			1 $40.25 10 $40.09 100 $33.43 1000 $33.24 10000 $33.24	Buy Now
RS	ABLJO-V-155.520MHZ	Bulk		12 Weeks	10	1 - 10 $41.95 100 $41.95 1000 $41.95 10000 $41.95	Get Quote
Avnet Abacus	ABLJO-V-155.520MHZ			14 Weeks	10	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation ASG-P-V-B-491.520MHZ XTAL OSC VCXO 491.5200MHZ LVPECL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ASG-P-V-B-491.520MHZ					1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 520MH price and stock on Findchips.com

520MH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RA55H4452M Abstract: No abstract text available Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	PDF	RA55H4452M 440-520MHz RA55H4452M 55-watt 520-MHz
RD02MUS1 Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	PDF	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
RD07MVS1 Abstract: RD07MVS1-101 T112 3M Touch Systems Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor	Original	PDF	RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) RD07MVS1-101 T112 3M Touch Systems
RA13H4452M Abstract: RA13H4452M-101 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	PDF	RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-101
RA45H4452M Abstract: RA45H4452M-101 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4452M RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	PDF	RA45H4452M 440-520MHz RA45H4452M 45-watt 520-MHz RA45H4452M-101
RA07M4452M Abstract: generator 4.20 mA Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4452 RA07M4452M 07M4452MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier	Original	PDF	RA07M4452M RA07M4452MSA 07M4452 440-520MHz RA07M4452MSA 520-MHz RA07M4452M generator 4.20 mA
RD07MVS1 Abstract: RD07MVS1B T112 3M Touch Systems Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05	Original	PDF	RD07MVS1B 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS1B RD07MVS1 T112 3M Touch Systems
RD09MUP2 Abstract: No abstract text available Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-UHF-072-B Date: 6th Feb. 2006 Rev.date : 22th Jun. 2010 Prepared: M.Miyashita S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: “RD09MUP2” 400-520MHz RF characteristics data	Original	PDF	AN-UHF-072-B RD09MUP2" 400-520MHz RD09MUP2 RD09MUP2: 059XA-G" 400/520MHz 520MHz 3mm/50OHM 330pF
RD01MUS1-101 Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	PDF	RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 c111m RD01MSU1 3M Touch Systems
100OHM Abstract: RD30HUF1 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.	Original	PDF	RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 100OHM
20-TSSOP Abstract: KB8821 KB8822 KB8823 Text: PRELIMINARY SPECIFICATION V1.5 FREQUENCY SYNTHESIZER KB8821/22/23 INTRODUCTION The KB8821/22/23 are high performance dual frequency synthesizers with integrated prescalers designed for RF operation up to 1.2GHz/2.0GHz/2.5GHz and IF operation up to 520MHz.	Original	PDF	KB8821/22/23 KB8821/22/23 520MHz. KB8823) KB8821/22/ 20-TSly TEL-97-D003 20-TSSOP KB8821 KB8822 KB8823
RD07MVS1 Abstract: RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor	Original	PDF	RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101
GP 839 DIODE Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.	Original	PDF	RD01MUS2 520MHz 520MHz RD01MUS2 GP 839 DIODE GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
RA07N4452M Abstract: RF MOSFET MODULE RA07N4452 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4452M RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to	Original	PDF	RA07N4452M 440-520MHz RA07N4452M 520-MHz RF MOSFET MODULE RA07N4452

RA07M4452MSA Abstract: RA07M Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4452MSA RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 440- to	Original	PDF	RA07M4452MSA 440-520MHz RA07M4452MSA 520-MHz RA07M
RD07MVS1-101 Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor	Original	PDF	RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101, RD07MVS1-101 T112 ID-750 RD07M D07MVS1 3M Touch Systems
RD01MUS2 Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	PDF	RD01MUS2 520MHz RD01MUS2 520MHz RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems
Untitled Abstract: No abstract text available Text: Product Data Sheet CDS6E-380/520 6dB Directional Coupler Product Description RFS CDS*E series Directional Coupler has been design for indoor applications covering 380 to 520MHz. Units couple off a defined fraction of signal from 6 to 30 dB with minimal reflections or loss.The	Original	PDF	CDS6E-380/520 520MHz.
RA07H4452M Abstract: RA07H4452M-01 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452M 440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 440- to 520-MHz	Original	PDF	RA07H4452M 440-520MHz RA07H4452M 520-MHz RA07H4452M-01
SP8718 Abstract: SP8718AC Text: SP8718AC 520MHz 64/65 TWO MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B The SP8718 -^64/65 is a 50mW program m able divider with a maximum specified operating frequency of 520MHz over the tem perature range -55° C to +125° C. The signal (clock) inputs are biased internally and require	OCR Scan	PDF	SP8718AC 520MHz MIL-STD-883C SP8718 MIL-M-38510 fortheSP8718ACat SP8718 SP8718AC
Untitled Abstract: No abstract text available Text: SERIAL INPUT PLL FREQUENCY SYNTHESIZER WITH 520M H z PRESCALER FU JIT S U MB1504 SERIAL INPUT PLL FREQUENCY SYNTHESIZER WITH 520MHz PRESCALER June 1 9 8 9 E d itio n 3 .0 The Fujitsu M B1504, u tilizin g BI-CMOS technology, is a single ch ip serial inp u t	OCR Scan	PDF	MB1504 520MHz B1504, B1504 16-bit 15-bit 14-bit 19-bit 18-bi MB1504
2SC3103 Abstract: No abstract text available Text: - 198 - M A Sé fé '¡ ' m • 2 S C 3 1 0 3 EA %&WM is 'J -X , 2. 8Wo ffliÉ : VHF/uHF 150/400MHz «MSffl, 7. 2V m<a OHF 2* T' 20:1 VSWR tìÉtX-èo É : VHF/UHF (150/400MHz) UHF w ® 7 .2 v - y j - x , eifo 51 S Ì j i f t l M o W S : Vcc=9V, Po=6. 0W, f=520MHz O f j f f	OCR Scan	PDF	2SC3103 520MHz 15CC/W) 520MFiZ 150/400MHz 27MHz 800MHz) 860MHz,
M64072FP Abstract: M64072 64072FP 20SOP 20P2N 20P2E 20S50 M6407 Text: M IT S U B IS H I INTEGRATED CIRCUIT M 64072FP /G P 520MHz DUAL P L L FREQUENCY SYNTHESIZER DESCRIPTION M64072FP/GP is a 520MHz band 2 system 1 chip PLL fre quency synthesizer. Since PLL with 2 systems is incorpo rated, it is optimum for cordlessphone. duel band transceiv	OCR Scan	PDF	64072FP 520MHz M64072FP/GP 20SOP) 20P2N 20P2E 20SOP 20P2N) M64072FP M64072 20SOP 20P2N 20P2E 20S50 M6407
24P2E Abstract: M64083GP Text: MITSUBISHI SEMICONDUCTORS [DIGITAL/ANALOG IC] M64083GP Dual PLL Frequency Synthesizer DESCRIPTION The M64083GP is a dual-circuit single-chip PLL frequency synthesizer 1C that supports a maximum direct input of 520MHz. The M64083GP includes a high-speed lockup function. This 1C is ideal for	OCR Scan	PDF	M64083GP M64083GP 520MHz. 24P2E 24P2E

520MH Search Results

520MH Price and Stock

Rochester Electronics LLC LM10520MH-NOPB

Rochester Electronics LLC LM10520MHE-NOPB

Abracon Corporation ASG-D-V-A-155.520MHZ

Abracon Corporation ABLJO-V-155.520MHZ

Abracon Corporation ASG-P-V-B-491.520MHZ

520MH Datasheets Context Search

RA55H4452M

RD02MUS1

RD07MVS1

RA13H4452M

RA45H4452M

RA07M4452M

RD07MVS1

RD09MUP2

RD01MUS1-101

100OHM

20-TSSOP

RD07MVS1

GP 839 DIODE

RA07N4452M

RA07M4452MSA

RD07MVS1-101

RD01MUS2

Untitled

RA07H4452M

SP8718

Untitled

2SC3103

M64072FP

24P2E