sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
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O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
76N07-11
76N07-12
100N10
170N10
sd 20n60
IXFX 44N80
20n80
60n60
9n80
C2625
power mosfet 100n20
IXFH32N50
230N10
8N80
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50n50
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs VDSS IXFX50N50 IXFX 55N50 D ^D25 DS on 500 V 50 A 100 mQ 500 V 55 A 80 mQ trr <250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions V Tj =25°Cto150°C Tj = 25° C to 150° C; RQS= 1 M il 500 500 V V Continuous
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Cto150
IXFX50N50
55N50
50N50
55N50
PLUS247TM
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5555N
Abstract: No abstract text available
Text: Lattica ispLSI' 3256 ;Semiconductor ICorporation High Density Programmable Logic Features Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — 128 I/O Pins — 11000 PLD Gates — 384 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State
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55N55
Abstract: fast IXFX
Text: VDSS HiPerFET Power MOSFETs IXFX 50N50 IXFX 55N50 D ^D25 DS on 500 V 50 A 100 mQ 500 V 55 A 85 mQ t„ < 250 ns Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VTCR Tj = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MO 500 500 V V VGS Continuous
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50N50
55N50
55N50
PLUS247TM
55N55
fast IXFX
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