24N60A
Abstract: 24N60
Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20
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24N60
24N60A
O-247
24N60A
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24N60
Abstract: 24N60A 1365c
Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20
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24N60
24N60A
24N60
24N60A
1365c
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IXGH20N60AU1
Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient
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N60U1
N60AU1
O-247
IXGH20N60U1
IXGH20N60AU1
IXGH20N60AU1
IXGH20N60U1
20N60AU1
*GH20N60AU1
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200N60
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES IC25 VCE sat 600 V 600 V 200 A 200 A 2.5 V 2.7 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30
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200N60
200N60A
OT-227B,
T100A
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200n60
Abstract: ixgn200N60 200N60A IXGN200N60A
Text: HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES IC25 VCE sat 600 V 600 V 200 A 200 A 2.5 V 2.7 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30
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200N60
200N60A
OT-227B,
200n60
ixgn200N60
200N60A
IXGN200N60A
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30n60b
Abstract: 30N60 30N60C ic 931
Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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30N60B
30N60C
O-268
O-247
30n60b
30N60
30N60C
ic 931
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Untitled
Abstract: No abstract text available
Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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30N60B
30N60C
O-268
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10N60A
Abstract: IGBT 10N60 10N60 10N60 e N60A
Text: Low VCE sat IGBT High speed IGBT IXGH 10 N60 IXGH 10 N60A Maximum Ratings VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM
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10N60A
10N60
10N60
10N60A
10N60U1
IGBT 10N60
10N60 e
N60A
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT VCES IXGN 200N60 IXGN 200N60A 600 V 600 V IC25 VCE sat 200 A 2.5 V 200 A 2.7 V E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient
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200N60
200N60A
OT-227B,
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24N60
Abstract: 40N60A4 40n60 robot control 24N60A 40N60A D-68623 gate drive circuit for igbt 40n60a 4
Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 600 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous
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24N60
24N60A
O-247
40N60A
24N60
40N60A4
40n60
robot control
24N60A
40N60A
D-68623
gate drive circuit for igbt
40n60a 4
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RG 290
Abstract: C110
Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 120N60B VCES IC25 Electrically Isolated Back Surface = 600 V = 156 A = 2.1 V VCE(sat) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600
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ISOPLUS247TM
120N60B
RG 290
C110
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 180 A = 2.5 V VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600
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80N60B
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600
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IXGH39N60B
IXGH39N60BD1
IXGT39N60B
IXGT39N60BD1
O-268
O-247
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD3 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Buck configuration IGBT Preliminary data sheet Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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50N60BD3
OT-227B,
0-06A
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49n6
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with HiPerFRED IXGN 49N60BD3 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Buck configuration IGBT Preliminary data sheet Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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49N60BD3
OT-227B,
0-06A
49n6
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30N60C
Abstract: No abstract text available
Text: n ix Y S ADVANCED TECHNICAL INFORMATION VCES High Speed IGBT tn 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/1XST 30N60B IXSH/1XST 30N60C ^CES Short Circuit SOA Capability • Symbol Test Conditions v CES T, =25°Cto150°C 600 V VC0R ^ 600 V v GES Continuous
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30N60B
30N60C
Cto150
O-247AD
O-268
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Untitled
Abstract: No abstract text available
Text: ^C25 VCE sat 20 A 20 A 2.5 V 3.0 V VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10 N60AU1 600 V Combi Packs Preliminary data Symbol Test Conditions V« Td = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous
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10N60U1
N60AU1
4bflb22b
GD0223Ã
10N60AU1
D94006DE,
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XSH24N60
Abstract: 24n60
Text: P IX Y S HiPerFAST IGBT IXSH 24N60 IXSH 24N60A v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V " ces Tj = 25° C to 150° C 600 V VCGR Tj = 2 5°C tO 150°C; RGE= 1 Mi2 600 V vGES
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24N60
24N60A
O-247
/XSH24N60
24N60A
IXSH24N60U1
IXSH24N60AU1
XSH24N60
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Untitled
Abstract: No abstract text available
Text: □ IXYS V CES HiPerFAST IGBT 600 V 600 V IXSH 24N60 IXSH 24N60A V C25 CE sat 48 A 2.2 V 48 A 2.7 V Short Circuit SOA Capability G_ Maximum Ratings Sym bol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V
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24N60
24N60A
Collect4N60A
24N60
24N60A
24N60U1
24N60AU1
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24N60AU
Abstract: ixsh24n60au1 24n60au1 TO-247 weight
Text: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V
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24N60U1
24N60AU1
IXSH24N60AU1
1999IXYS
24N60AU
ixsh24n60au1
TO-247 weight
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode v CES IXSH 10N60U1 IXSH 10N60AU1 "S" Series Improved SCSOA Capability 600 V 600 V Symbol Test Conditions v"CES v CGR T j = 25°C to 150°C 600 V T j = 25°C to 150°C; RGE= 1 M n 600 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25” C
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10N60U1
10N60AU1
10N60AU1
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10N60A
Abstract: IGBT 10N60 10N6Q
Text: nixYS ^ IXGH10N60 IXGA/IXGH 10N60A |g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s
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IXGH10N60
10N60A
O-263
O-247
10N60
10N60A
10N60U1
10N60AU1
D94006DE,
IGBT 10N60
10N6Q
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n60c
Abstract: ci lm 317
Text: 0IXYS ADVANCEDTECHNICALINFORMATION High Speed IGBT with Diode IXSH30N60CD1 IXSK30N60CD1 IXST30 N60CD1 CES ^C25 VCE sat t fi Short Circuit SOA Capability 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings 600 V vCGR 600 V VGES vGEM
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IXSH30N60CD1
IXSK30N60CD1
IXST30
N60CD1
O-247AD
Cto150
O-268
O-264
n60c
ci lm 317
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NPN Power Darlington Modules
Abstract: sk30db semikron SK 300
Text: se MIKROn Maximum Ratings VcEV Units lc = 1 A, V be = - 2 V 600 V Vbe = - 2 V 600 V 600 V SEMITRANS 2 NPN Power Darlington Modules 30 A, 600 V SK 30 DB 060 D V ebo o II ' VcBO Values o o VcEVsus Conditions m II Symbol 7 V lc D. C. 30 A tp = 1 ms 60 A D. C.
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h21E2)
NPN Power Darlington Modules
sk30db
semikron SK 300
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