Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    120N60B Search Results

    SF Impression Pixel

    120N60B Price and Stock

    IXYS Corporation IXGX120N60B

    IGBT 600V 200A 660W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGX120N60B Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXGR120N60B

    IGBT 600V 156A 520W ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGR120N60B Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXGK120N60B

    IGBT 600V 200A 660W TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGK120N60B Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXGX120N60B3

    IGBT 600V 280A 780W PLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGX120N60B3 Tube 30
    • 1 -
    • 10 -
    • 100 $8.76033
    • 1000 $8.76033
    • 10000 $8.76033
    		Buy Now
    Bristol Electronics IXGX120N60B3 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IXYS Corporation IXGK120N60B3

    DISC IGBT PT-MID FREQUENCY TO-26
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGK120N60B3 Tube 25
    • 1 -
    • 10 -
    • 100 $12.3024
    • 1000 $12.3024
    • 10000 $12.3024
    		Buy Now
    Find more 120N60B price and stock on Findchips.com

    120N60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    120n60b

    Abstract: IC tl 072 IXGX120N60B
    Text: HiPerFASTTM IGBT IXGK 120N60B IXGX 120N60B VCES IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30 V V IC25 IC90 IL(RMS) ICM TC = 25°C


    Original     		PDF 120N60B O-264 120n60b IC tl 072 IXGX120N60B

    120N60B

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFASTTM IGBT IXGK 120N60B IXGX 120N60B VCES IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25 °C to 150 °C TJ = 25 °C to 150 °C; RGS = 1 MW 600 600 V V VCES VGEM Continuous Transient ±20 ±30 V V


    Original     		PDF 120N60B 247TM PLUS247TM 120N60B

    120n60b

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 120N60B VCES IC25 Electrically Isolated Back Surface = 600 V = 156 A = 2.1 V VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF ISOPLUS247TM 120N60B IC110 mou75 120n60b

    RG 290

    Abstract: C110
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 120N60B VCES IC25 Electrically Isolated Back Surface = 600 V = 156 A = 2.1 V VCE(sat) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600


    Original     		PDF ISOPLUS247TM 120N60B RG 290 C110

    120n60

    Abstract: 120N6
    Text: Advanced Technical Information HiPerFASTTM IGBT IXGK 120N60B IXGX 120N60B VCES IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25 °C to 150 °C TJ = 25 °C to 150 °C; RGS = 1 MW 600 600 V V VCES VGEM Continuous Transient ±20 ±30 V V


    Original     		PDF 120N60B 120N60B 247TM O-264 120n60 120N6

    120N60B

    Abstract: igbt clip IXGX120N60B
    Text: HiPerFASTTM IGBT IXGK 120N60B IXGX 120N60B VCES IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30 V V IC25 IC90 IL(RMS) ICM TC = 25°C


    Original     		PDF 120N60B 120N60B 247TM O-264 torque25 igbt clip IXGX120N60B

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 120N60B Electrically Isolated Back Surface VCES IC25 = 600 V = 156 A = 2.1 V VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF ISOPLUS247TM 120N60B IC110

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		PDF 7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


    Original     		PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGK 120N60B IXGX 120N60B VCES ^C25 V CE sat Maximum Ratings Symbol Test C onditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 600 600 V V v vGEM Continuous Transient ±20 ±30


    OCR Scan     		PDF 120N60B PLUS247â

    si6045

    Abstract: No abstract text available
    Text: BHXYS Advanced Technical Information Hi PerFAST IGBT IXGK 120N60B IXGX 120N60B V CES ^C25 V CE sat Symbol Test Conditions Maximum Ratings T j = 25° C to 150° C T,J = 25° C to 150° C; FL. = 1 MQ üb 600 600 V V Continuous Transient +20 ±30 V V L.


    OCR Scan     		PDF 120N60B 120N60B PLUS247TM O-264 B2-167 si6045

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B