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    120N6 Search Results

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    120N6 Price and Stock

    Rochester Electronics LLC EL5120N6E

    EL5120 - 2MHZ RAIL-TO-RAIL INPUT
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    DigiKey EL5120N6E Bulk 3,950 300
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    Infineon Technologies AG IKQ120N60TXKSA1

    IGBT TRENCH FS 600V 160A TO247-3
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    DigiKey IKQ120N60TXKSA1 Tube 2,540 1
    • 1 $13.24
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    Avnet Americas IKQ120N60TXKSA1 Tube 19 Weeks 240
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    Mouser Electronics IKQ120N60TXKSA1 388
    • 1 $11.4
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    Newark IKQ120N60TXKSA1 Bulk 469 1
    • 1 $13.83
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    • 100 $11.23
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    Rochester Electronics IKQ120N60TXKSA1 3,260 1
    • 1 $7.74
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    TME IKQ120N60TXKSA1 1
    • 1 $11.26
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    Chip1Stop IKQ120N60TXKSA1 Tube 1,435
    • 1 $9.24
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    EBV Elektronik IKQ120N60TXKSA1 20 Weeks 240
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    PanJit Group PJMH120N60EC_T0_00601

    600V/ 120MOHM / 30A/ EASY TO DRI
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    DigiKey PJMH120N60EC_T0_00601 Tube 1,800 1
    • 1 $6.29
    • 10 $4.25
    • 100 $6.29
    • 1000 $2.66157
    • 10000 $2.36435
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    Vishay Siliconix SIHA120N60E-GE3

    MOSFET N-CH 600V 25A TO220
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    DigiKey SIHA120N60E-GE3 Bulk 999 1
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    Vishay Siliconix SIHB120N60E-GE3

    MOSFET N-CH 600V 25A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB120N60E-GE3 Tube 913 1
    • 1 $5.12
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    Find more 120N6 price and stock on Findchips.com

    120N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    120n60b

    Abstract: IC tl 072 IXGX120N60B
    Text: HiPerFASTTM IGBT IXGK 120N60B IXGX 120N60B VCES IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30 V V IC25 IC90 IL(RMS) ICM TC = 25°C


    Original     		PDF 120N60B O-264 120n60b IC tl 072 IXGX120N60B

    ISOPLUS247

    Abstract: 120N60C2
    Text: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT IXGR 120N60C2 VCES IC110 VCE sat tfi(typ) ISOPLUS247TM Lightspeed 2TM Series (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 120N60C2 ISOPLUS247TM IC110 405B2 ISOPLUS247 120N60C2

    120N60B

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFASTTM IGBT IXGK 120N60B IXGX 120N60B VCES IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25 °C to 150 °C TJ = 25 °C to 150 °C; RGS = 1 MW 600 600 V V VCES VGEM Continuous Transient ±20 ±30 V V


    Original     		PDF 120N60B 247TM PLUS247TM 120N60B

    120n60b

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 120N60B VCES IC25 Electrically Isolated Back Surface = 600 V = 156 A = 2.1 V VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF ISOPLUS247TM 120N60B IC110 mou75 120n60b

    RG 290

    Abstract: C110
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 120N60B VCES IC25 Electrically Isolated Back Surface = 600 V = 156 A = 2.1 V VCE(sat) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600


    Original     		PDF ISOPLUS247TM 120N60B RG 290 C110

    120n60

    Abstract: 120N6
    Text: Advanced Technical Information HiPerFASTTM IGBT IXGK 120N60B IXGX 120N60B VCES IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25 °C to 150 °C TJ = 25 °C to 150 °C; RGS = 1 MW 600 600 V V VCES VGEM Continuous Transient ±20 ±30 V V


    Original     		PDF 120N60B 120N60B 247TM O-264 120n60 120N6

    120N60B

    Abstract: igbt clip IXGX120N60B
    Text: HiPerFASTTM IGBT IXGK 120N60B IXGX 120N60B VCES IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30 V V IC25 IC90 IL(RMS) ICM TC = 25°C


    Original     		PDF 120N60B 120N60B 247TM O-264 torque25 igbt clip IXGX120N60B

    PLUS247

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT IXGK 120N60C2 IXGX 120N60C2 Lightspeed 2TM Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30


    Original     		PDF 120N60C2 IC110 405B2 PLUS247

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 120N60B Electrically Isolated Back Surface VCES IC25 = 600 V = 156 A = 2.1 V VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF ISOPLUS247TM 120N60B IC110

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT 120N60A3 120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXGN120N60A3 IXGN120N60A3D1 IC110 OT-227B, E153432 IF110 2x61-06A

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT Lightspeed 2TM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C limited by leads Maximum Ratings


    Original     		PDF 120N60C2 120N60C2 IC110 O-264 PLUS247 405B2

    Untitled

    Abstract: No abstract text available
    Text: VCES = 600V IC110 = 120A VCE sat ≤ 1.35V 120N60A3 120N60A3D1 GenX3TM 600V IGBT Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 G 60A3D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


    Original     		PDF IC110 IXGN120N60A3 IXGN120N60A3D1 OT-227B, E153432 60A3D1 IF110 2x61-06A

    IXGN120N60A3D1

    Abstract: 120N60A3 IXGN120N60A3 IXGN120N60A 120n60 120N60A3D1 IF110
    Text: 120N60A3 120N60A3D1 GenX3TM 600V IGBT VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 G 60A3D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


    Original     		PDF IXGN120N60A3 IXGN120N60A3D1 IC110 OT-227B, E153432 60A3D1 IF110 2x61-06A IXGN120N60A3D1 120N60A3 IXGN120N60A3 IXGN120N60A 120n60 120N60A3D1 IF110

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		PDF 7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2

    AM29F010

    Abstract: 29F010 amd am29f010 CROSS REFERENCE programmer for 29F010 NEXFLASH 29f010 PLCC 29F010 DIP 45p6 Flash cross reference 90K-1
    Text: NX29F010 1Mbit 128Kx8 5V-only Sector Flash Cross Reference Guide AMD n/a AM29F010-45JC AM29F010-55JC AM29F010-70JC AM29F010-90JC / 120JC n/a AM29F010-45EC AM29F010-55EC AM29F010-70EC AM29F010-90EC / 120EC AM29F010-45PC AM29F010-55PC AM29F010-70PC AM29F010-90PC / 120PC


    Original     		PDF NX29F010 128Kx8) AM29F010-45JC AM29F010-55JC AM29F010-70JC AM29F010-90JC 120JC AM29F010-45EC AM29F010-55EC AM29F010-70EC AM29F010 29F010 amd am29f010 CROSS REFERENCE programmer for 29F010 NEXFLASH 29f010 PLCC 29F010 DIP 45p6 Flash cross reference 90K-1

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


    Original     		PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    M25P08

    Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
    Text: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010


    Original     		PDF SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 W29EE512 SST39SF010; SST29EE010 AM29F010, M25P08 MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGK 120N60B IXGX 120N60B VCES ^C25 V CE sat Maximum Ratings Symbol Test C onditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 600 600 V V v vGEM Continuous Transient ±20 ±30


    OCR Scan     		PDF 120N60B PLUS247â

    si6045

    Abstract: No abstract text available
    Text: BHXYS Advanced Technical Information Hi PerFAST IGBT IXGK 120N60B IXGX 120N60B V CES ^C25 V CE sat Symbol Test Conditions Maximum Ratings T j = 25° C to 150° C T,J = 25° C to 150° C; FL. = 1 MQ üb 600 600 V V Continuous Transient +20 ±30 V V L.


    OCR Scan     		PDF 120N60B 120N60B PLUS247TM O-264 B2-167 si6045

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B