Untitled
Abstract: No abstract text available
Text: PD - 96272 IRG7CH75K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution
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IRG7CH75K10B
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7462 ic
Abstract: Q67041-A4694-A001 SIGC81T60NC 7462-M 7462
Text: SIGC81T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • IGBT-Modules G Applications: • drives Chip Type VCE ICn
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SIGC81T60NC
Q67041-A4694A001
7462-M,
7462 ic
Q67041-A4694-A001
SIGC81T60NC
7462-M
7462
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SIGC81T60N
Abstract: No abstract text available
Text: Preliminary SIGC81T60N IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • IGBT-Modules G Applications: • drives Chip Type
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SIGC81T60N
Q67041-A4694A001
7462-E,
SIGC81T60N
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8ETL06
Abstract: No abstract text available
Text: PD - 20989 FD100T06A5B FRED Die in Wafer Form # # 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel , Chip Pack, and Sawn on Film "(upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD100T06A5B
150ns
8ETL06
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a4100
Abstract: dt 5329 SIDC53D120H 4392H
Text: Preliminary SIDC53D120H Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE ICn SIDC53D120H 1200V 100A A This chip is used for:
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SIDC53D120H
Q67050-A4100A001
4392H,
a4100
dt 5329
SIDC53D120H
4392H
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Untitled
Abstract: No abstract text available
Text: PD - 20987 FD120T06A5B FRED Die in Wafer Form # # 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel, Chip Pack, and Sawn on Film " (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD120T06A5B
190ns
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Untitled
Abstract: No abstract text available
Text: I - 0517J rev. B FD100U06A5B FRED Die in Wafer Form z 600V VF = 1.25V typ. 5" Wafer 100% Tested at Probe c Electrical Characteristics Parameter VFM VFM VRRM IRM trr Description Typical Forward Voltage Typical Forward Voltage Minimum Reverse Breakdown Voltage
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0517J
FD100U06A5B
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Untitled
Abstract: No abstract text available
Text: I - 0517J rev. A FD100U06A5B FRED Die in Wafer Form z 600V VF = 1.25V typ. 5" Wafer 100% Tested at Probe c Electrical Characteristics Parameter VFM VFM VRRM IRM trr Description Typical Forward Voltage Typical Forward Voltage Minimum Reverse Breakdown Voltage
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0517J
FD100U06A5B
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FD100W06A5F
Abstract: FD100W06A5B
Text: PD - 20990 FD100W06A5B FRED Die in Wafer Form # # 600V VF = 3.0 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel , Chip Pack, and Sawn on Film "(upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD100W06A5B
195nC
FD100W06A5F
FD100W06A5B
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Untitled
Abstract: No abstract text available
Text: PD - 20987 rev. A FD120T06A5B FRED Die in Wafer Form z z 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD120T06A5B
190ns
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Untitled
Abstract: No abstract text available
Text: PD - 20988 rev. A FD120W06A5B FRED Die in Wafer Form z z 600V VF = 3.2 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD120W06A5B
350nC
60due
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S1025 equivalent
Abstract: No abstract text available
Text: Bulletin I - 0165J rev. A 12/05 FD075T06A5B FRED Die in Wafer Form z z 600V VF = 0.95V typ. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VFM VRRM IRM trr
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0165J
FD075T06A5B
S1025 equivalent
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FD100H06A5B
Abstract: FD100H06A5F 8ETH06 FD100H06A5P FD100H06A5R MIL-HDBK-263 S1025
Text: PD - 20201 rev.C FD100H06A5B FRED Die in Wafer Form z z 600V VF = 2.4 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD100H06A5B
220nC
12-Mar-07
FD100H06A5B
FD100H06A5F
8ETH06
FD100H06A5P
FD100H06A5R
MIL-HDBK-263
S1025
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HF100D060ACE
Abstract: IRGC100B60K
Text: PD - 94619 HF100D060ACE Hexfred Die in Wafer Form Features GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI
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125mm
HF100D060ACE
IRGC100B60K
HF100D060ACE
IRGC100B60K
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FD100W06A5F
Abstract: MIL-HDBK-263 S1025 8ETX06 FD100W06A5B
Text: PD - 20990 rev.A FD100W06A5B FRED Die in Wafer Form # # 600V VF = 3.0 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel , Chip Pack, and Sawn on Film "(upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD100W06A5B
195nC
12-Mar-07
FD100W06A5F
MIL-HDBK-263
S1025
8ETX06
FD100W06A5B
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Untitled
Abstract: No abstract text available
Text: PD - 94618A IRGC100B60KB Die in Wafer Form Features C GEN5 Non Punch Through NPT Technology Low VCE(on) 10µs Short Circuit Capability Square RBSOA Positive VCE(on) Temperature Coefficient Benchmark Efficiency for Motor Control Applications
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4618A
IRGC100B60KB
150mm
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SIGC54T60R3
Abstract: No abstract text available
Text: SIGC54T60R3 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC54T60R3 VCE ICn 600V 100A This chip is used for:
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SIGC54T60R3
Q67050A4341-A101
L7581A,
SIGC54T60R3
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MIL-HDBK-263
Abstract: S1025
Text: Bulletin I - 0165J rev. A 12/05 FD075T06A5B FRED Die in Wafer Form z z 600V VF = 0.95V typ. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VFM VRRM IRM trr
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0165J
FD075T06A5B
100Aability,
12-Mar-07
MIL-HDBK-263
S1025
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FD100T06A5B
Abstract: 8ETL06 MIL-HDBK-263 S1025 for IR hexfet die
Text: PD - 20989 rev.A FD100T06A5B FRED Die in Wafer Form # # 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel , Chip Pack, and Sawn on Film "(upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD100T06A5B
150ns
12-Mar-07
FD100T06A5B
8ETL06
MIL-HDBK-263
S1025
for IR hexfet die
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FD120W06A5B
Abstract: for IR hexfet die 15ETX06 MIL-HDBK-263 S1025 FD120W06A5
Text: PD - 20988 rev. B FD120W06A5B FRED Die in Wafer Form z z 600V VF = 3.2 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD120W06A5B
350nC
12-Mar-07
FD120W06A5B
for IR hexfet die
15ETX06
MIL-HDBK-263
S1025
FD120W06A5
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FD120T06A5B
Abstract: 15ETL06 MIL-HDBK-263 S1025
Text: PD - 20987 rev. B FD120T06A5B FRED Die in Wafer Form z z 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD120T06A5B
190ns
12-Mar-07
FD120T06A5B
15ETL06
MIL-HDBK-263
S1025
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4193E
Abstract: SIDC42D60E
Text: Preliminary SIDC42D60E Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE ICn SIDC42D60E 600V 100A A This chip is used for:
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SIDC42D60E
C67047-A4681A001
4193E,
4193E
SIDC42D60E
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SIDC42D60E6
Abstract: No abstract text available
Text: Preliminary SIDC42D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC42D60E6 600V 100A A This chip is used for:
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SIDC42D60E6
C67047-A4681A003
4193M,
SIDC42D60E6
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IRGC100B60K
Abstract: HF100D060ACE
Text: PD - 94619 HF100D060ACE Hexfred Die in Wafer Form Features GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI
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HF100D060ACE
125mm
12-Mar-07
IRGC100B60K
HF100D060ACE
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