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    600V N CHANNEL MOSFET Search Results

    600V N CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    600V N CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smps 5v 0.3A

    Abstract: N-Channel 600V MOSFET AF01N60C low vgs mosfet to-92
    Text: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical


    Original     		PDF AF01N60C AF01N60C -55oC 150oC smps 5v 0.3A N-Channel 600V MOSFET low vgs mosfet to-92

    MOSFET 4600

    Abstract: smps 5v 0.3A 4600 mosfet inverter
    Text: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical


    Original     		PDF AF01N60C AF01N60C -55oC 150oC MOSFET 4600 smps 5v 0.3A 4600 mosfet inverter

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical


    Original     		PDF AF01N60C -55oC 150oC AF01N60C

    w20nm

    Abstract: w20nm60 p20nm60fp P20NM60FP equivalent
    Text: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω


    Original     		PDF STB20NM60-1 STP20NM60FP STB20NM60 STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 w20nm w20nm60 p20nm60fp P20NM60FP equivalent

    w20nm60

    Abstract: w20nm60 equivalent p20nm60 P20NM60FP B20NM60 V2.1 STB20NM60 STB20NM60-1 P20NM60FP equivalent STP20NM60
    Text: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original     		PDF STB20NM60-1 STP20NM60FP STB20NM60 STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 w20nm60 w20nm60 equivalent p20nm60 P20NM60FP B20NM60 V2.1 P20NM60FP equivalent

    W20NM60

    Abstract: P20nm60 p20nm60fp w20nm60 equivalent P20NM60FP equivalent mosfet w20nm60 B20NM60-1 STP20NM60FP
    Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original     		PDF STB20NM60/-1 STP20NM60FP STP20NM60 STW20NM60 O-247 O-220/FP STB20NM60 STB20NM60-1 W20NM60 P20nm60 p20nm60fp w20nm60 equivalent P20NM60FP equivalent mosfet w20nm60 B20NM60-1

    w20nm60

    Abstract: w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60
    Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original     		PDF STB20NM60/-1 STP20NM60FP STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 STB20NM60-1 w20nm60 w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60

    RG 2006 10A 600V

    Abstract: FQU3N60C FQU3N60CTU FQD3N60C FQD3N60CTF FQD3N60CTM
    Text: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD3N60C FQU3N60C FQU3N60C RG 2006 10A 600V FQU3N60CTU FQD3N60CTF FQD3N60CTM

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C

    FQPF10N60CF

    Abstract: FQP10N60C FQP10N60CF FQPF10N60C
    Text: FRFET TM FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS on = 0.8Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP10N60CF FQPF10N60CF FQPF10N60CF FQP10N60C FQPF10N60C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD3N60C FQU3N60C FQU3N60C

    FQPF Series fqpf10n60c

    Abstract: FQPF10N60C FQP10N60C
    Text: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP10N60C FQPF10N60C FQPF Series fqpf10n60c FQPF10N60C

    FDU2N60C

    Abstract: N-Channel 600V MOSFET FQD2N60C FQU2N60C 600v 2A ultra fast recovery diode 2250U
    Text: QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FDU2N60C N-Channel 600V MOSFET FQD2N60C FQU2N60C 600v 2A ultra fast recovery diode 2250U

    10N60CT

    Abstract: 10N60C FQPF10N60CT FQPF Series fqpf10n60c FQPF10N60C FQPF Series FQPF 10N60 FQP10N60C
    Text: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP10N60C FQPF10N60C FQPF10N60C FQPF10N60CT 10N60CT 10N60C FQPF Series fqpf10n60c FQPF Series FQPF 10N60

    Untitled

    Abstract: No abstract text available
    Text: 600V N-Channel MOSFET Features Description • 6.26A, 600V, RDS on = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 28nC)


    Original     		PDF FQB8N60CF FQB8N60CF

    IRFBc40

    Abstract: transistor irfbc40 4A,600V IRFBC42 TB334 TA17426
    Text: IRFBC40, IRFBC42 Semiconductor 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFBC40, IRFBC42 IRFBc40 transistor irfbc40 4A,600V IRFBC42 TB334 TA17426

    IRFPC40

    Abstract: No abstract text available
    Text: IRFPC40 Data Sheet January 2002 6.8A, 600V, 1.200 Ohm, N-Channel Power MOSFET Features • 6.8A, 600V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFPC40 IRFPC40

    FQB8N60CF

    Abstract: FQB8N60CFTM
    Text: TM FRFET FQB8N60CF 600V N-Channel MOSFET Features Description • 6.26A, 600V, RDS on = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 28nC)


    Original     		PDF FQB8N60CF FQB8N60CF FQB8N60CFTM

    2N60C

    Abstract: fdu2n60c 305 marking code d-pak
    Text: FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


    Original     		PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FQU2N60C FQU2N60CTLTU FQU2N60CTU 2N60C fdu2n60c 305 marking code d-pak

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS on = 0.8Ω @VGS = 10 V • Low gate charge ( typical 44 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FQP10N60CF FQPF10N60CF FQPF10N60CF

    Untitled

    Abstract: No abstract text available
    Text: TM FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


    Original     		PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C

    FQB8N60C

    Abstract: FQB8N60CF FQB8N60CFTM
    Text: QFET FQB8N60CF TM 600V N-Channel MOSFET Features Description • 6.26A, 600V, RDS on = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 28nC)


    Original     		PDF FQB8N60CF FQB8N60CF FQB8N60C FQB8N60CFTM

    FQPF Series

    Abstract: FQP10N60C
    Text: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FQP10N60C FQPF10N60C FQPF10N60C FQPF Series

    FDU2N60C

    Abstract: FQD2N60C FQU2N60C
    Text: FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


    Original     		PDF FQD2N60C/FQU2N60C FQD2N60C/FQU2N60C FDU2N60C FQD2N60C FQU2N60C