Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    625 1334 DIODE Search Results

    625 1334 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    625 1334 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GW 540 DIODE

    Abstract: 625 1334 diode
    Text: MITEQ AM-1641 SERIES AMPLIFIER FREQUENCY MHz 100–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1641 27 1.5 2.0:1 50/50 1.9 25 31 -5 dB Return Loss 32 Gain (dB) 30 29


    Original     		PDF AM-1641 600staff, GW 540 DIODE 625 1334 diode

    GW 540 DIODE

    Abstract: No abstract text available
    Text: MITEQ AM-3A-000110 AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-3A-000110 37 0.75 2.0:1 50/50 1.6 10 FREQUENCY (MHz) 0.3–1000 42 3 13 41 12 40 P1dB 39 38 11 10 37


    Original     		PDF AM-3A-000110 GW 540 DIODE

    Untitled

    Abstract: No abstract text available
    Text: MITEQ AM-4A-000110 AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-4A-000110 50 1 2.0:1 50/50 1.6 10 FREQUENCY (MHz) 1–1000 4 15 14 P1dB 13 12 11 10 9 8 100 200 300


    Original     		PDF AM-4A-000110

    AM-1431

    Abstract: No abstract text available
    Text: MITEQ AM-1431 SERIES AMPLIFIER FREQUENCY MHz 0.01–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1431 35 0.75 2.0:1 50/50 1.6 10 15 40 14 75 3 13 39 P1dB 38 37 12 11


    Original     		PDF AM-1431

    Untitled

    Abstract: No abstract text available
    Text: MITEQ AM-2A-000110 AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-2A-000110 26 0.75 2.0:1 50/50 1.6 8 FREQUENCY (MHz) 1–1000 Gain (dB) 29 P1dB Gain (dB) 30 28 27 26


    Original     		PDF AM-2A-000110

    AM-1309

    Abstract: No abstract text available
    Text: MITEQ AM-1309 AMPLIFIER FREQUENCY MHz 0.01–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1309 50 1 2.0:1 50/50 1.6 10 4 13 53 12 52 11 P1dB 51 50 10 9 8 49 7 48 6 0.3


    Original     		PDF AM-1309 10staff,

    Untitled

    Abstract: No abstract text available
    Text: MITEQ AM-1551 SERIES AMPLIFIER FREQUENCY MHz 0.02–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1551 38 1 2.0:1 50/50 1.6 16 Gain (dB) Third Order Intercept 44 3 43


    Original     		PDF AM-1551

    Untitled

    Abstract: No abstract text available
    Text: MITEQ AM-1352 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 1–1000 AM-1352-1000 20 0.5 2.0:1 50/50 3.6 17 15 95 1 1–2000 AM-1352-2000 20 0.75 2.0:1 50/50 3.7


    Original     		PDF AM-1352 AM-1352-1000 AM-1352-2000 AM-1352-2500

    AM-1300

    Abstract: No abstract text available
    Text: MITEQ AM SERIES AMPLIFIER FREQUENCY MHz 0.01–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1300 27 0.75 2.0:1 50/50 1.6 8 13 29 12 55 2 11 28 P1dB 27 26 10 9 8 7 24


    Original     		PDF AM-1300

    Untitled

    Abstract: No abstract text available
    Text: MITEQ AM-1646 AMPLIFIER FREQUENCY MHz 0.3–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1646 59 0.75 2.0:1 50/50 1.6 15 4 19 62 18 61 17 P1dB 60 59 16 15 14 58 13 57


    Original     		PDF AM-1646 23staff,

    gw 340 diode

    Abstract: DIODE 236 1334
    Text: MITEQ AU-1642 AMPLIFIER FREQUENCY MHz GAIN (dB) (Min.) MODEL NUMBER VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1dB Gain (dB) 27 26 25 24 23 22 21 20 19 18 145 240 340 430 525 620 715 810 25 24 23 22 21 20 19 18 17 16 905 1000


    Original     		PDF AU-1642 gw 340 diode DIODE 236 1334

    DIODE 906 1334

    Abstract: No abstract text available
    Text: MITEQ AM-1636 AMPLIFIER FREQUENCY MHz 200–3000 MODEL NUMBER GAIN (dB) (Min.) AM-1636 8 VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 2.0:1 50/50 1.7 20 23 18 22 16 21 P1dB Gain (dB) 20 14 19 10 18 8 640


    Original     		PDF AM-1636 DIODE 906 1334

    Untitled

    Abstract: No abstract text available
    Text: MITEQ AM-1624 SERIES AMPLIFIER FREQUENCY MHz GAIN (dB) (Min.) MODEL NUMBER VAR. (±dB) (Max.) IMPED. IN/OUT (Ohms) VSWR (Max.) NOISE FIGURE (dB, Typ.) 45 Third Order Intercept 38 37 36 35 34 33 40 35 30 1.0 250 500 750 1000 1250 1500 1750 2000 2250 2500


    Original     		PDF AM-1624 AM-1624-2500

    miteq au series satcom if amplifiers

    Abstract: No abstract text available
    Text: MITEQ AM-1185 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1185-1000 AM-1185-2000 28 28 0.5 1 2.0:1 2.0:1 50/50 50/50 3.4 3.5 12 10 FREQUENCY (MHz) 1–1000


    Original     		PDF AM-1185 AM-1185-1000 AM-1185-2000 200ion, 2002/96/EC 2002/96/EC miteq au series satcom if amplifiers

    RF 1331

    Abstract: No abstract text available
    Text: MITEQ AM-1331 & AM-1412 SERIES AMPLIFIER FREQUENCY MHz 1–1000 1–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1331 AM-1412 35 35 0.75 0.75 2.0:1 2.0:1 50/50 50/50


    Original     		PDF AM-1331 AM-1412 AM-1331 RF 1331

    AN8742

    Abstract: CD22402E Genlock CD22402D 1N914 CA5470 CD22402 CD4000B RS-170 decoder tv
    Text: CD22402 S E M I C O N D U C T O R Sync Generator for TV Applications and Video Processing Systems November 1996 Features Description • Interlaced Composite Sync Output The Harris CD22402 Note is a CMOS LSI sync generator that produces all the timing signals required to drive a fully 2-to-1


    Original     		PDF CD22402 525-line 30-frame/second, 625-line 25-frame/second 1-800-4-HARRIS AN8742 CD22402E Genlock CD22402D 1N914 CA5470 CD22402 CD4000B RS-170 decoder tv

    75337S

    Abstract: HUF75337G3 75337P HUF75337P3 HUF75337S3 HUF75337S3S HUF75337S3ST TB334
    Text: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description • 62A, 55V • Ultra Low On-Resistance, rDS ON = 0.014Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		PDF HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S TB334, 1-800-4-HARRIS 75337S HUF75337G3 75337P HUF75337P3 HUF75337S3 HUF75337S3S HUF75337S3ST TB334

    TEXAS INSTRUMENTS laser driver

    Abstract: S3017 B78108-S1153-K V23806-A84-C2
    Text: V23806-A84-C32 Single Mode 622 MBd ATM Transceiver 1x9 Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) (7.42–0.15) .292–.006 Optical Centerline (2) .080 (1.5±0.1) .06±.004 (0.73±0.1) .028±.004 (4±0.2) .158±.008 a)


    Original     		PDF V23806-A84-C32 84MHz V23806-A84-C2 1590Q S/UNI-622 S3017, S3018 V23806-A84-C32, TEXAS INSTRUMENTS laser driver S3017 B78108-S1153-K V23806-A84-C2

    Untitled

    Abstract: No abstract text available
    Text: FSYA250D, FSYA250R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs September 1997 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSYA250D, FSYA250R 1-800-4-HARRIS

    DATA SHEET IC 4046

    Abstract: FS250R DATASHEET Of c i 4046 MIL-S-19500 fsf250 ic 4046 2E12 FSF250D FSF250R
    Text: S E M I C O N D U C T O R FSF250D, FSF250R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 24A, 200V, rDS ON = 0.110Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		PDF FSF250D, FSF250R 36MeV/mg/cm2 to1E14 O-254AA 1-800-4-HARRIS DATA SHEET IC 4046 FS250R DATASHEET Of c i 4046 MIL-S-19500 fsf250 ic 4046 2E12 FSF250D FSF250R

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-Em itter Voltage C ollector-Base Voltage Em itter-Base Voltage Symbol Value Unit v CEO 50 Vdc VCBO 60 Vdc v EBO 6.0 Vdc Collector Current — Continuous


    OCR Scan     		PDF MPS6428 b3b75SS

    huf75337g3

    Abstract: 75337S
    Text: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S HARRIS S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features ^ • 62A, 55V M These N-Channel power MOS­ • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S TB334, 1-800-4-HARRIS huf75337g3 75337S

    1N120CND

    Abstract: No abstract text available
    Text: L I* n n i C y a £ £ & HGTP1N120CND, HGT1S1N120CNDS 6.2A, 1200V, NPT Series N-Channel IGBT Wjth Anti-Parallel Hyperfast Diode ADVANCE INFORMATION November 1998 Features Description • 6.2A, 1200V, T C = 2 5 °C The HGTP1N120CND and the HGT1S1N120CNDS are NonPunch Through NPT IGBT designs. They are new members of


    OCR Scan     		PDF HGTP1N120CND, HGT1S1N120CNDS TB334, HGTP1N120CND HGT1S1N120CNDS 1-800-4-HARRIS 1N120CND

    Untitled

    Abstract: No abstract text available
    Text: S3 FSF250D, FSF250R June 1997 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 24A, 200V, rDS o N = 0.110£i TO-254AA • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSF250D, FSF250R O-254AA 36MeV/mg/cm2 to1E14 1-800-4-HARRIS