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Catalog Datasheet	MFG & Type	Document Tags	PDF
IRF530 Abstract: IRF532 irf531 IRF533 1RF533 t5d 58 reliability irf530 irf-530 Text: ZETEX S EMI CONDUCT ORS W D T=] 70S7f i DDDSSSb 1 95D 0 5 5 5 6 IRF530 IRF531 IRF532 IRF533 N-channel enhancement mode vertical DMOS PET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability	OCR Scan	70S7f IRF530 IRF531 IRF532 IRF533 O-220 IRF533 1RF533 t5d 58 reliability irf530 irf-530	PDF
Untitled Abstract: No abstract text available Text: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc	OCR Scan	70S7fl 000bfl7fl ZTX657 MPSA42 ZTX656 MPSA43 ZTX655 ZTX455 ZTX454 ZTX654	PDF
m 60 n 03 g10 Abstract: No abstract text available Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60	OCR Scan	7057fl 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 m 60 n 03 g10	PDF
bcv59 Abstract: N705 bcv-59 ZTX301 Text: ’ ZETEX SEMICONDUCTORS IbE D • =1170570 000b675 0 ■ ZETB ' SEM IC O N D U C T O R DICE ELECTRICAL C H A RA C TERIST ICS NPN SM A LL SIGNAL TRA N SISTO R S Dice type- BC546A BC546B ZT X304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C	OCR Scan	000b675 BC546A BC546B BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B bcv59 N705 bcv-59 ZTX301	PDF
ds132 Abstract: No abstract text available Text: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BST86 FEATURES: PARTMARKING DETAIL - KO ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 180 UNIT V Continuous Drain Current at Ta = 25°C •d 300 mA mA Pulse Drain Current taM	OCR Scan	BST86 100/iA lD300m 300fis. 70S7fl ds132	PDF
Untitled Abstract: No abstract text available Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 -J U L Y 94_ FEATURES * 100 Volt V CE0 * 2 A m p continuous current * Low saturation voltage * P,ot=1W a tt ABSOLUTE M A X IM U M RATINGS. Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	ZTX753 ZTX752 cH7Q57Ã 0Q1Q354 001G35S	PDF
Untitled Abstract: No abstract text available Text: bOE D • CH ? Ü 5 7 B 0007210 00e! « Z E T B ZETEX SEMICONDUCTORS IMPIM Silicon Planar High Voltage Transistors M PSA42 M PSA43 D E S C R IP T IO N T h ese plastic encapsulated, general purp ose transistors are d esigned for applications requiring high breakdow n voltages, low	OCR Scan	PSA42 PSA43 200ns. 0G07212 MpsA42 DDD7213	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - M A Y 94_ FEATURES * 12 Volt V CE0 * Gain of 400 at lc=3 A m p s * Very low saturation voltage A P P L IC A T IO N S * Darlington replacement * Flash gu n convertors	OCR Scan	cH7Q57Ã 0Q1Q354 001G35S	PDF
ZVNL120Z Abstract: DMOSFET Text: S0T89 N-CHANNEL ENHANCEMENT MODE VERTICAL D.MOSFET ZVIML120Z PARTMARKING DETAIL: ZVNL120Z - L12 * FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVNL120G DATA SHEET ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Drain-Source Voltage Continuous Drain Current at Ta = 25°C	OCR Scan	S0T89 ZVNL120Z ZVIML120Z ZVNL120G 125mA, 250mA 70S7fl DMOSFET	PDF
Untitled Abstract: No abstract text available Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ISSU E 1 - JU L Y FEATU RES * 300 Volt V.CEO 0.5 Amp continuous current P,o,= 1 Watt E E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL	OCR Scan	ZTX557 ZTX556 cH7Q57Ã 001G35S	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 60 Volt V DS * R DS on = 2 £ i ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current at Tamtp25°C VALUE UNIT V DS 60	OCR Scan	Tamtp25Â 001G35S	PDF
ZVN2110 Abstract: Zetex dmos ZVIM2110 ZVN2110B ZVN211 F-127 ZVN2110A ZVN2110C ZVN2110E F131 Text: J> bOE ^70570 • ZETEX 0007027 6 TÔ I Z E T B —I SEMICONDUCTORS N-channel enhancement mode vertical D M O S FET ZVN 2110 F EA T U R E S • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance	OCR Scan	ZVN2110 ZVN2110A* ZVN2110B* ZVN2110C Z-130 F-131 70S7fl 4/derating/8/86 ZVN2110 Zetex dmos ZVIM2110 ZVN2110B ZVN211 F-127 ZVN2110A ZVN2110E F131	PDF
458A Abstract: N458 Text: TS ZE TE X INC D. ^70570 OODblûb T 95D 06 186 D - T 'S 8 - o - 7 ZN458, ZN 458A ZN458B 2 .4 5 V precision reference regulator FEATU RES • • • • • • • Guaranteed 5 m V maximum deviation over full temperature range Low temperature coefficient 0 .0 0 3 % /°C	OCR Scan	ZN458, ZN458B 10ppm 10/iV ZN458A 1Hz-10kHz ZN458 70S7fi 458A N458	PDF
Untitled Abstract: No abstract text available Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 O_ FEATURES * Suitable fo r AF drivers and ou tput stages * High collector current and Low VCE sat COMPLEMENTARY TYPE - BCP53 PARTMARKING DETAILS - BCP56 BCP56 - 1 0 B C P 5 6-1 6	OCR Scan	OT223 BCP53 BCP56 BCP56 500mA, BCP56-10 BCP56-16 150mA,	PDF

analogue ohmmeter circuit diagram Abstract: transistor tt 2170 em digital ic cd 4066 BUT18 Text: ZE TE X INC TS » • TÌ70570 DDDbCm 4 ■ 95D 06 0 9 9 T 'S t - t O - e S " ZN451E ZN451CJ 3 y2 digit DVM 1C with external auto-zero DESCRIPTION EATURES External circuits may be included in the auto-zero loop ’ Full-scale reading 1 .9 9 9 m V or lower	OCR Scan	ZN451E ZN451CJ Ti7057fl analogue ohmmeter circuit diagram transistor tt 2170 em digital ic cd 4066 BUT18	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424A ISSUE 2 January 1994_ FEATURES * 240 Volt VDS * R D S o n = 4 ' 3 i i t y P ' 031 a t V G S = 2 -5 V * Low threshold APPLICATIONS * Earth recall and dialling switches * Electronic hook switches	OCR Scan	ZVN4424A arntf25Â 300ns. DD10312	PDF