Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7Sb4142 0014517 721 KMM5361000B1/B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tRAC tcAC tra KMM5361000B1-6 60ns 15ns 110ns KMM5361000B1-7
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7Sb4142
KMM5361000B1/B1G
110ns
KMM5361000B1-7
130ns
KMM5361000B1-8
KMM5361000B1
20-pin
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34S71
Abstract: 005D C1005D
Text: K M 4 4 C 1 005 DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power
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KM44C
KM44C1005DJ
003427b
34S71
005D
C1005D
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KM68BV4002
Abstract: No abstract text available
Text: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)
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KM68BV4002
512Kx
KM68BV4002-12
170mA
KM68BV4002
KM68BV4002-15
160mA
KM68BV4002J
36-SOJ-400
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KM29N040T
Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective
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KM29N040T
512Kx8
500us
400mil/0
KM29N040T
512Kx8bit
KM29N040
KM29N040T)
7TL4142
741 IC data sheet
bhrb
data sheet IC 741
KM29N04
samsung flash bad block mapping
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ks88c4316
Abstract: KS88C4116 samsung dmb microcontro adc6 material
Text: K S 8 8 C 4 3 16 E L E C T R O N IC S Mi crocontroll er DESCRIPTION The KS88C4316 single-chip 8-bit m icrocontroller is fabricated using a highly advanced CMOS process W ith a large num ber o f I/O pins, two synchronous serial I/O ports, 8-bit A/D converter, two 8-bit tim er/counters with
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KS88C4316
KS88C4316
16-bit
272-byte
16-Kbyte
64-Kbyte
KS88C4116
samsung dmb
microcontro
adc6 material
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Untitled
Abstract: No abstract text available
Text: KM44C 1 003 DJ CMOS D R AM ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , powér
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KM44C
KM44C1003DJ
G03416B
00341f
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Untitled
Abstract: No abstract text available
Text: KM44V16100AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,
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KM44V16100AK
16Mx4
16Mx4,
512Kx8)
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC tiHE D m 7U4142 256Kx4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: -8 Item • • • • • • • • • • • • -10 80ns 1 0 0 ns access time t R A c
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7U4142
256Kx4
150ns
180ns
28-PIN
KM424C256
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gd243
Abstract: No abstract text available
Text: KM29N32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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KM29N32000TS/RS
250us
gd243
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irf9540
Abstract: l 9143 irfp9140 IRFP9143 IRF9540 mosfet IRF9541 9142 ha 9141 9143 15a 50v p-channel mosfet
Text: SAMSUNG ELSTC^ONTCS IN C h4 E D WÊ 7 T b m M 2 IK I-y ö 4 Ü /»ö4 1 /y ö 4 2 /9 5 4 3 IRFP9140/914179142/9143 FEATURES • • • • • • • □□122bG GG E • SI1GK P-CHANNEL POWER MOSFETS TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times
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41/y542/9543
IRFP9140/9141
-100V
IRF9541/Ã
RFP9141
IRF9542/IRFP9142
IRF9543/IRFP9143
O-220
irf9540
l 9143
irfp9140
IRFP9143
IRF9540 mosfet
IRF9541
9142
ha 9141
9143
15a 50v p-channel mosfet
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ic 74142
Abstract: No abstract text available
Text: Preliminary KMM5364003ASW/ASWG DRAM MODULE KMM5364003ASW/ASWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003A is a 4Mx36bits Dynamic RAM ~ Part Identification high density memory module. The Samsung KMM5364003A
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KMM5364003ASW/ASWG
KMM5364003ASW/ASWG
4Mx16
KMM5364003A
4Mx36bits
4Mx16bits
72-pin
KMM5364003ASW
ic 74142
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HMM-11520
Abstract: No abstract text available
Text: T SAMSUNG ELECTRONICS INC bOE ]> • “7 * H 3 r O I 7 T b m 4 2 0012006 Ob? ■ StIGK H M M -11520 3} I-LARRIS Low Current GaAs MMIC Amplifier PRODUCT DATA SHEET June 1991 7 .5 -1 5 G Hz Features • On-Chip Source Resistor Network for Easy Bias Point Selection
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HMM-11520
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Untitled
Abstract: No abstract text available
Text: KS16120B Preliminary DSP for Digital Answering phone with ARAM interface INTRODUCTION KS16120B is a digital signal processor IC that implements all the 80-Q FP-1420C functions and hardware interfaces necessary for voice compression, storage and digital telephone answerer.
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KS16120B
KS16120B
4M/16M
-24dB
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A30Z
Abstract: 3224B V256D ttl 74112
Text: KM416V256DJ CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mods CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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16V256DJ
256Kx16
KM416V256DJ
Q0322bt.
A30Z
3224B
V256D
ttl 74112
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Untitled
Abstract: No abstract text available
Text: P r r ^ - m in e ^ Y KM6164002B, KM6164002BI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N •• Fast Access Time 10,12,15* • Max. - Low Power Dissipation The KM6164002B is a 4,194,304-bit high-speed Static Random
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KM6164002B,
KM6164002BI
KM6164002B
304-bit
71b4142
G03b70Q
KM6164002Bl
44-TS
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Untitled
Abstract: No abstract text available
Text: KM416C1004BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416C1004BJ
1Mx16
DD302t4
D0302bS
Q03D2bb
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Untitled
Abstract: No abstract text available
Text: KM44C4005BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
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KM44C4005BS
16Mx4,
512Kx8)
71b414E
003455b
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C 4 1 05B S ELECTRONICS CMOS D R A M 4 M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
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16Mx4,
512Kx8)
KM44C4105BS
GG34727
71b4142
Q03472Ã
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KM29V32000TS
Abstract: No abstract text available
Text: KM29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29V32000TS
250us
KM29V32000TS
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dg312
Abstract: No abstract text available
Text: KM6 8 FV 1OOO CMOS SRAM ELECTRONICS 128Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FV1000, KM68FS1000 and KM68FR1000 • Organization : 128K x 8 family are fabricated by SAMSUNG'S advanced Full
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128Kx8
KM68FV1000
KM68FS1000
KM68FR1000
32-SOP,
32-TSOP
32-STSOP
KM68FV1000,
dg312
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Untitled
Abstract: No abstract text available
Text: IRLW/IZ34A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 30 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175» »Operating Temperature ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = 60V
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IRLW/IZ34A
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Untitled
Abstract: No abstract text available
Text: KM 29N16000ETS/RS FLASH M EM O RY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : {2M +64K) x 8 bit
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KM29N16000ETS/RS
KM29N16000
Figure14
b4142
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KM44C4100BS
Abstract: BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit
Text: KM44C4100BS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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KM44C4100BS
34STB
KM44C4100BS
BC3 csr
data sheet tsop 138
TSOP 173 g
KM44C4100B
N300N
3bm42
512Kx8 bit
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC L7E D • 7 ^ 4 1 4 2 DDlSb30 77D ■ SM6K KM41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM 41C4002B is a C M O S high speed 4,194,304 x 1 Dynamic Random A cce ss Memory. Its de
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DDlSb30
KM41C4002B
41C4002B
41C4002B-6
110ns
41C4002B-7
130ns
41C4002B-8
150ns
R55-only
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