Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    7E0000 Search Results

    SF Impression Pixel

    7E0000 Price and Stock

    Hosonic Electronic Co Ltd E3SB27E00000DE

    XTAL 3225 27MHZ, 10PF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey E3SB27E00000DE Cut Tape 2,481 1
    • 1 $0.37
    • 10 $0.316
    • 100 $0.2725
    • 1000 $0.235
    • 10000 $0.235
    		Buy Now
    E3SB27E00000DE Digi-Reel 2,481 1
    • 1 $0.37
    • 10 $0.316
    • 100 $0.2725
    • 1000 $0.235
    • 10000 $0.235
    		Buy Now
    E3SB27E00000DE Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.21907
    		Buy Now

    TDK Electronics B65887E0000R041

    FERRITE CORE RM 6.8UH N41 2PCS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B65887E0000R041 Box 402 1
    • 1 $11.2
    • 10 $7.491
    • 100 $6.15267
    • 1000 $6.15267
    • 10000 $6.15267
    		Buy Now
    Newark B65887E0000R041 Kit 1
    • 1 $9.82
    • 10 $8.36
    • 100 $6.4
    • 1000 $6.4
    • 10000 $6.4
    		Buy Now

    TDK Electronics B65887E0000R087

    FERRITE CORE RM 6UH N87 2PCS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B65887E0000R087 Box 307 1
    • 1 $9.71
    • 10 $6.501
    • 100 $5.10433
    • 1000 $5.10433
    • 10000 $5.10433
    		Buy Now
    Newark B65887E0000R087 Kit 232 1
    • 1 $10.06
    • 10 $6.76
    • 100 $5.3
    • 1000 $5.3
    • 10000 $5.3
    		Buy Now
    TME B65887E0000R087 201 1
    • 1 $10.39
    • 10 $8.35
    • 100 $7
    • 1000 $6.73
    • 10000 $6.73
    		Buy Now

    TDK Electronics B65887E0000R049

    FERRITE CORE RM 3.9UH N49 2PCS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B65887E0000R049 Box 235 1
    • 1 $11.89
    • 10 $7.945
    • 100 $6.5202
    • 1000 $6.5202
    • 10000 $6.5202
    		Buy Now
    Newark B65887E0000R049 Kit 1
    • 1 $12.29
    • 10 $8.27
    • 100 $6.78
    • 1000 $6.78
    • 10000 $6.78
    		Buy Now

    TDK Electronics B65887E0000R097

    FERRITE CORE RM 6UH N97 2PCS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B65887E0000R097 Tray 234 1
    • 1 $11.83
    • 10 $7.905
    • 100 $6.5685
    • 1000 $6.5685
    • 10000 $6.5685
    		Buy Now
    Find more 7E0000 price and stock on Findchips.com

    7E0000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MX25L6475E MX25L6475E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1831 1 REV. 1.1, NOV. 11, 2013 MX25L6475E Contents 1. FEATURES. 4


    Original     		PDF MX25L6475E PM1831

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


    Original     		PDF Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM

    TE28F640J3C-120

    Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
    Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective


    Original     		PDF 28F128J3, 28F640J3, 28F320J3 x8/x16) 32-Byte 128-bit --64-bit High-Densi8/x16 56-Lead TE28F640J3C-120 TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Untitled

    Abstract: No abstract text available
    Text: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)


    Original     		PDF S29NS-R S29NS01GR, S29NS512R, S29NS256R, S29NS128R S29NS512P S29NS512R. S29VS256R S29VS128R

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


    Original     		PDF EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000

    UTC 1316

    Abstract: 74hc4060 xtal LM358 RF receiver module HD44100 HD44780 utc 1240 a can1a350ek 940 629 MOTOROLA 220 TBA 240B utc 1018 hc11k
    Text: MOTOROLA Order this document by AN1597/D SEMICONDUCTOR APPLICATION NOTE AN1597 Longwave Radio Data Decoding using an HC11 and an MC3371 Prepared by: P. Topping AMCU Applications Engineering Motorola Ltd., East Kilbride INTRODUCTION The BBC’s Radio 4 198 kHz Longwave transmitter carries


    Original     		PDF AN1597/D AN1597 MC3371 UTC 1316 74hc4060 xtal LM358 RF receiver module HD44100 HD44780 utc 1240 a can1a350ek 940 629 MOTOROLA 220 TBA 240B utc 1018 hc11k

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV6402M S29GL128N 110R

    JS28F256P33

    Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
    Text: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features „ „ „ „ High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst


    Original     		PDF 52MHz 32-KByte 128-KByte 130nm 64-Mbit RD48F2000P0XBQ0 128-Mbit RD48F3000P0XBQ0 256-Mbit RD48F4000P0XBQ0 JS28F256P33 PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85

    M29W640DB

    Abstract: M29W640D M29W640DT A0-A21 6A000
    Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns


    Original     		PDF M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000

    M420000000

    Abstract: FSB073 3FE00
    Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector


    Original     		PDF Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00

    28F640J3

    Abstract: E28F640J3A-120 INTEL 28F320J3 TSOP 66 Package 28F128K3 28F256K3 TE28F640J3C-120 28F128J3 28F160S3 RC28F128J3C-150
    Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective


    Original     		PDF 28F128J3, 28F640J3, 28F320J3 x8/x16) 32-Byte 128-bit --64-bit High-Densi8/x16 56-Lead 28F640J3 E28F640J3A-120 INTEL 28F320J3 TSOP 66 Package 28F128K3 28F256K3 TE28F640J3C-120 28F128J3 28F160S3 RC28F128J3C-150

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    Micron Q-Flash memory

    Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
    Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)


    Original     		PDF 128Mb, MT28F128J3, MT28F640J3, MT28F320J3 56-Pin x8/x16 128KB 128Mb) Micron Q-Flash memory FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11

    28F256L30

    Abstract: 28F128L30 28F640L30
    Text: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0 Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 90 ns initial access — 50MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode


    Original     		PDF 28F640L30, 28F128L30, 28F256L30 50MHz 16K-Word 64K-Word com/design/flcomp/packdata/298049 28F256L30 28F128L30 28F640L30

    B605

    Abstract: HC711E9 S085 b673 power transistor IC1 7812 b673 transistor SPGMR11 AN1060 MC68HC811E2FN2 M68HC11
    Text: M68HC11E Family Data Sheet M68HC11 Microcontrollers M68HC11E/D Rev. 5 6/2003 MOTOROLA.COM/SEMICONDUCTORS MC68HC11E Family Data Sheet To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier


    Original     		PDF M68HC11E M68HC11 M68HC11E/D MC68HC11E B605 HC711E9 S085 b673 power transistor IC1 7812 b673 transistor SPGMR11 AN1060 MC68HC811E2FN2 M68HC11

    LHF12F16

    Abstract: wp 146 LH28F128BFHT-PTTL75A
    Text: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LH28F128BFHT-PTTL75A LHF12F16) FM046010 LHF12F16 LHF12F16 wp 146 LH28F128BFHT-PTTL75A

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original     		PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    MX29LV640D

    Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
    Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales


    Original     		PDF MX29LV640D MX29LV640E MX29LV640E PM1208 64M-BIT A0-A21 Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX

    MX29LV640ebt

    Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
    Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable


    Original     		PDF MX29LV640E 64M-BIT 128-word MX29LV640ebt MX29LV640EB MX29LV640EBTI-70G 29LV640 mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132

    C000H-DFFFH

    Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
    Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation


    Original     		PDF MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh

    M25PX64

    Abstract: No abstract text available
    Text: M25PX64 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz maximum clock frequency ■ 2.7 V to 3.6 V single supply voltage ■ Dual input/output instructions resulting in an


    Original     		PDF M25PX64 64-Mbit, 64-Kbyte 64-byte M25PX64