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    88-108 MHZ W POWER Search Results

    88-108 MHZ W POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS320VC5506GBB Texas Instruments Low power C55x fixed point DSP - 108MHz 179-NFBGA -40 to 85 Visit Texas Instruments
    TMS320VC5506ZAY Texas Instruments Low power C55x fixed point DSP - 108MHz 179-NFBGA -40 to 85 Visit Texas Instruments
    TMS320VC5506ZAYR Texas Instruments Low power C55x fixed point DSP - 108MHz 179-NFBGA -40 to 85 Visit Texas Instruments
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    88-108 MHZ W POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    88-108 rf amplifier

    Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932
    Text: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 88-108 rf amplifier 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k

    blf578

    Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
    Text: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power


    Original     		PDF AN10800 BLF578 BLF578, AN10800 BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X

    blf574

    Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
    Text: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract


    Original     		PDF AN10714 BLF574 BLF574, AN10714 Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d

    ATC100B151J

    Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT

    MRF6VP2600H

    Abstract: T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT

    mrf6vp2600h

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H

    MRF6VP2600H

    Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 100fficers, MRF6VP2600H ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k

    NIPPON CAPACITORS

    Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi

    SD2932

    Abstract: 200B 700B RG316 ST40 SD2932 reference T20 56 diode diode Zener t25 4 c5
    Text: SD2932 RF power transistors HF/VHF/UHF n-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metallized n-channel MOS


    Original     		PDF SD2932 SD2932 200B 700B RG316 ST40 SD2932 reference T20 56 diode diode Zener t25 4 c5

    inductor vk200

    Abstract: 10A ferrite bead 25 ohm semirigid ZENER MARKING C8 ST vk200 ferrite bead ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms VK200 FERRITE diode L2.70 MARKING code mf stmicroelectronics
    Text: SD2932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metallized N-channel MOS


    Original     		PDF SD2932 SD2932 inductor vk200 10A ferrite bead 25 ohm semirigid ZENER MARKING C8 ST vk200 ferrite bead ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms VK200 FERRITE diode L2.70 MARKING code mf stmicroelectronics

    Untitled

    Abstract: No abstract text available
    Text: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS


    Original     		PDF SD2932 SD2932 SD2932W

    ZENER MARKING C8 ST

    Abstract: CAPACITOR 64 680 4J diode t25 4 L5 SD2932 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
    Text: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS


    Original     		PDF SD2932 SD2932 SD2932W ZENER MARKING C8 ST CAPACITOR 64 680 4J diode t25 4 L5 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b

    choke vk200

    Abstract: VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date SD1460 marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics
    Text: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM


    Original     		PDF SD1460 SD1460 choke vk200 VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics

    NEOSId

    Abstract: RG316-25
    Text: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 NEOSId RG316-25

    RG316-25

    Abstract: 25 ohm semirigid diode t25 4 L5 850 ohm potentiometer RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz vk200 ferrite bead 220 k ohm potentiometer VK200 INDUCTOR vk200.10 diode gp 434
    Text: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 RG316-25 25 ohm semirigid diode t25 4 L5 850 ohm potentiometer RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz vk200 ferrite bead 220 k ohm potentiometer VK200 INDUCTOR vk200.10 diode gp 434

    RG316-25

    Abstract: diode Zener t25 4 c8 T20 88 DIODE neosid diode t25 4 L5 MF variable CAPACITOR 50v Fair-Rite ATC 200B diode t25 4 c6 SD2932
    Text: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz M244 epoxy sealed DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 RG316-25 diode Zener t25 4 c8 T20 88 DIODE neosid diode t25 4 L5 MF variable CAPACITOR 50v Fair-Rite ATC 200B diode t25 4 c6

    diode Zener t25 4 c5

    Abstract: diode gp 434 RG316-25 diode t25 4 L5 diode t25 4 c5 SD2932 200B 700B ST40 neosid
    Text: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 diode Zener t25 4 c5 diode gp 434 RG316-25 diode t25 4 L5 diode t25 4 c5 200B 700B ST40 neosid

    RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

    Abstract: MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
    Text: SD2932  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 TSD2932 RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR

    vk200 rfc with 6 turns

    Abstract: vk200 choke SD1460 vk200* FERROXCUBE vk200 rf choke VK200 rfc VK200 TSD-1460 3-M-K-6098
    Text: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM


    Original     		PDF SD1460 SD1460 vk200 rfc with 6 turns vk200 choke vk200* FERROXCUBE vk200 rf choke VK200 rfc VK200 TSD-1460 3-M-K-6098

    Untitled

    Abstract: No abstract text available
    Text: NXP LDMOS RF power transistor BLF578 LDMOS RF power transistor delivering 1000 W of CW output power Delivering 1000 W of CW output power with 26 dB of gain and 75% efficiency, this rugged LDMOS device is ideally suited for use in broadcast transmitters and industrial, scientific and


    Original     		PDF BLF578

    fs1020

    Abstract: DFS2040 DFS80180 DFS20180 DFS4080 92SF UFS2040 mfs1020 dfs20 s0540
    Text: Frequency Synthesizer Product Catolog The content of this specification may change without notification 1/28/10 Coaxial Low Phase Noise Frequency Synthesizer 1 to 18GHz Low Phase Noise Frequency Synthesizers Freq. Step Power 2 Output Range Size GHz (MHz)


    Original     		PDF 18GHz MFS1020 RS232 RS485 fs1020 DFS2040 DFS80180 DFS20180 DFS4080 92SF UFS2040 mfs1020 dfs20 s0540

    mrf245

    Abstract: SD1416 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072
    Text: 88. 108 MHz class C for FM tansmitters émetteurs/réémetteurs FM, classe C TYPE SD 1457 SD 1460 PACKAGE CONFIG. Vcc CE CE 28 28 . 500 4LFL . 500 4LFL Pout W (V) > THOMSON-CSF fo (MHz) Pin (W) Gp (dB) (% ) 108 108 7,5 20 > 10 9 75 75 75 160 r!c .380 4L FL


    OCR Scan     		PDF SD2N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 mrf245 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072

    Philips Semiconductors RF Power Modules

    Abstract: RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"
    Text: Philips Semiconductors RF power modules Selection guide INTRODUCTION The following tables represent our complete range of RF power modules. VHF modules for mobile transminers f MHz Pl (W) Vs (V) 18 12.5 68 to 88 18 12.5 80 to 108 18 12.5 132 to 156 18 12.5


    OCR Scan     		PDF OT132B OT288C OT183A Philips Semiconductors RF Power Modules RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"

    sd1483

    Abstract: GP LL3
    Text: SGS-THOMSON ^ 7 # . » » I l L ll g r a W D SD1483 g i RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS > 88 - 108 MHz . 28 VOLTS . EFFICIENCY 60% . COMMON EMITTER . GOLD METALLIZATION > P o u t = 300 W MIN. WITH 10 dB GAIN PIN CONNECTION 1 1 2 DESCRIPTION


    OCR Scan     		PDF SD1483 SD1483 GP LL3