VFBGA
Abstract: BV48A BV36A
Text: Package Diagram VFBGA 36-Lead VFBGA 6 x 8 x 1 mm BV36A 51-85149-* 1 Package Diagram 48-Lead VFBGA (6 x 8 x 1 mm) BV48A 51-85150-* 2
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36-Lead
BV36A
48-Lead
BV48A
VFBGA
BV48A
BV36A
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WCMC4016V9B-55
Abstract: No abstract text available
Text: WCMC4016V9B ADVANCE INFORMATION 4Mb 256K x 16 Pseudo Static RAM Features HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High
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WCMC4016V9B
I/O15)
WCMC4016V9B
WCMC4016V9B-55
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CYK128K16SCCB
Abstract: No abstract text available
Text: CYK128K16SCCB 2-Mbit 128K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low power MoBL architecture The CYK128K16SCCB is a high-performance CMOS pseudo static RAMs (PSRAM) organized as 128K words by 16 bits that supports an asynchronous memory interface. This device
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CYK128K16SCCB
CYK128K16SCCB
I/O15)
CYK128K16SCCBU
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Untitled
Abstract: No abstract text available
Text: CY81U032X16A7A MoBL3 PRELIMINARY 32M 2M x 16 SRAM Features (OE HIGH), or during a write operation (CE LOW and WE LOW). • Very high speed: 70 ns • Advanced low-power MoBL architecture • Wide voltage range: — VCC range: 2.3V – 3.1V • • •
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CY81U032X16A7A
I/O15)
CY81U032X16A7A
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14027
Abstract: BV48A WCMC1616V9X WCMC1616V9X-FI70
Text: ADVANCE INFORMATION WCMC1616V9X 1Mb x 16 Pseudo Static RAM Features • 1T Cell, PSRAM Architecture • High speed: 70 ns • Wide Voltage range: — VCC range: 2.7V to 3.3V • Low active power — Typical active current: 2 mA @ f = 1 MHz — Typical active current: 13 mA @ f = fMAX
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WCMC1616V9X
WCMC1616V9X
14027
BV48A
WCMC1616V9X-FI70
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WCMC2016V9B-55
Abstract: z1012
Text: WCMC2016V9B 2-Mbit 128K x 16 Pseudo Static RAM Features can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2
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WCMC2016V9B
I/O15)
WCMC2016V9B
WCMC2016V9B-55
z1012
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Untitled
Abstract: No abstract text available
Text: CY62177V25 MoBL3 PRELIMINARY 32M MoBL3 SRAM Features are disabled OE HIGH , or during a Write operation (CE LOW and WE LOW). • Advanced low-power MoBL Architecture • Wide voltage range: — VCC range: 2.3V – 3.1V • • • • • Writing to the device is accomplished by taking Chip Enable
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CY62177V25
I/O15)
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 38-05391 Spec Title: CY62158DV30 MoBL, 8-Mbit 1024K x 8 MoBL Static RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62158DV30 MoBL 8-Mbit (1024K x 8) MoBL® Static RAM This is ideal for providing More Battery Life (MoBL®) in
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CY62158DV30
1024K
CY62158DV30
CY62158DV
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CY62167DV30L-55ZI
Abstract: CY62167DV30
Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed
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CY62167DV30
16-Mbit
I/O15)
CY62167DV30
48-lead
BV48A
BV48B
CY62167DV30L-55ZI
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ultra fine pitch BGA
Abstract: CY62147CV25 CY62147CV30 CY62147CV33 CY62147V
Text: 47V CY62147CV25/30/33 MoBL 256K x 16 Static RAM Features cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are
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CY62147CV25/30/33
I/O15)
CY62147CV25:
CY62147CV30:
CY62147CV33:
CY62147V
CY62147CV25/30/33
ultra fine pitch BGA
CY62147CV25
CY62147CV30
CY62147CV33
CY62147V
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CYK128K16SCCB
Abstract: No abstract text available
Text: CYK128K16SCCB 2-Mbit 128K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low-power MoBL architecture The CYK128K16SCCB is a high-performance CMOS pseudo static RAM (PSRAM) organized as 128K words by 16 bits that supports an asynchronous memory interface. This device
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CYK128K16SCCB
CYK128K16SCCB
I/O15)
CYK128K16SCCBU
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CY62137CV18
Abstract: 1105
Text: CY62137CV18 MoBL2 128K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a
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CY62137CV18
I/O15)
CY62137BV18
1105
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CY62136CV
Abstract: CY62136CV30 CY62136CV33 CY62136V
Text: CY62136CV30/33 MoBL CY62136CV MoBL 2M 128K x 16 Static RAM Features This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly
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CY62136CV30/33
CY62136CV
I/O15)
CY62136CV33
CY62136CV30
CY62136V
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Untitled
Abstract: No abstract text available
Text: CY62147DV18 MoBL2 PRELIMINARY 4 Mb 256K x 16 Static RAM Features • • • • • • • • • mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable
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CY62147DV18
CY62147CV18
48-ball
I/O15)
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Untitled
Abstract: No abstract text available
Text: CYK256K16SCCB 4-Mbit 256K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low power MoBL architecture The CYK256K16SCCB is a high-performance CMOS pseudo static RAM (PSRAM) organized as 256K words by 16 bits that supports an asynchronous memory interface. This device
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CYK256K16SCCB
CYK256K16SCCB
CYK256K16SCCBU
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Untitled
Abstract: No abstract text available
Text: CYK256K16MCCB MoBL3 PRELIMINARY 4-Mbit 256K x 16 Pseudo Static RAM Features can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both
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CYK256K16MCCB
48-ball
I/O15)
CYK256K16MCCB
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CY81U016X16A7A
Abstract: No abstract text available
Text: CY81U016X16A7A MoBL3 PRELIMINARY 16M 1M x 16 SRAM Features (OE HIGH), or during a write operation (CE LOW and WE LOW). • Very high speed: 70 ns • Advanced low-power MoBL architecture • Wide voltage range: — VCC range: 2.3V – 3.1V • •
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CY81U016X16A7A
I/O15)
CY81U016X16A7A
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CY62157CV18
Abstract: CY62157DV20
Text: PRELIMINARY CY62157DV20 MoBL2 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed
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CY62157DV20
I/O15)
55-ns
70-ns
CY62157CV18
CY62157CV18
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Untitled
Abstract: No abstract text available
Text: CY7C1011CV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1011CV33 is a high performance complementary
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CY7C1011CV33
CY7C1011CV33
I/O15)
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CY62126BV
Abstract: CY62126DV30 CY62126DV30L
Text: 26DV30 ADVANCE INFORMATION CY62126DV30 MoBL 64K x 16 Static RAM Features • • • • • • • • • reduces power consumption by 90% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when
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26DV30
CY62126DV30
I/O15)
CY62126BV
CY62126BV
CY62126DV30L
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Untitled
Abstract: No abstract text available
Text: CY7C1011CV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Functional Description Features The CY7C1011CV33 is a high performance complementary metal oxide semiconductor (CMOS) static RAM organized as 131,072 words by 16 bits. This device has an automatic power
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CY7C1011CV33
CY7C1011CV33
CY7C1011BV33
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CY62157CV25
Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or
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CY62157DV30
I/O15)
CY62157CV25,
CY62157CV30,
CY62157C.
CY62157DV
CY62157DV30
CY62157CV25
CY62157CV30
CY62157CV33
cy62157dv30l-55zxi
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CY62126BV
Abstract: CY62126DV30 CY62126DV30L
Text: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing
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CY62126DV30
I/O15)
CY62126DV30
70-ns
CY62126BV
CY62126DV30L
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Untitled
Abstract: No abstract text available
Text: CY62126DV30 MoBL PRELIMINARY 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62126BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX
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CY62126DV30
CY62126BV
48-ball
44-lead
CY62126DV30
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