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    FLK017XP Search Results

    FLK017XP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FLK017XP Fujitsu GaAs FET & HEMT Chip Original PDF
    FLK017XP-E1 Fujitsu FET: P Channel: ID 0.09 A Original PDF

    FLK017XP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLK017XP

    Abstract: GaAs FET HEMT Chips
    Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for


    Original
    PDF FLK017XP FLK017XP FCSI0598M200 GaAs FET HEMT Chips

    Untitled

    Abstract: No abstract text available
    Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for


    Original
    PDF FLK017XP FLK017XP 15hods

    Untitled

    Abstract: No abstract text available
    Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for


    Original
    PDF FLK017XP FLK017XP

    GaAs FET HEMT Chips

    Abstract: 2064 fet FLK017XP DIE CHIP 51 FET
    Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for


    Original
    PDF FLK017XP FLK017XP GaAs FET HEMT Chips 2064 fet DIE CHIP 51 FET

    Untitled

    Abstract: No abstract text available
    Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for


    Original
    PDF FLK017XP FLK017XP FCSI0598M200

    Filtronic

    Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
    Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15


    Original
    PDF FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500

    FLK017XP

    Abstract: GaAs FET HEMT Chips
    Text: FLK017XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 26%(Typ.) Proven Reliability DESCRIPTION


    OCR Scan
    PDF FLK017XP FLK017XP FCSI0598M200 GaAs FET HEMT Chips

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan
    PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet