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    Intersil Corporation HUF75329S3ST

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    Bristol Electronics HUF75329S3ST 1,799
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    Fairchild Semiconductor Corporation HUF75329S3ST

    49A, 55V, 0.024 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 49A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HUF75329S3ST 667
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    HUF75329S3ST Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75329S3ST Fairchild Semiconductor 49 A, 55 V, 0.024 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75329S3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-263, 3-Pin Original PDF
    HUF75329S3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF

    HUF75329S3ST Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    75329G

    Abstract: 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
    Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75329G3, HUF75329P3, HUF75329S3S 75329G 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 PDF

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A PDF

    75329p

    Abstract: 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329
    Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 File Number 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329 PDF

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C PDF

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference PDF

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532 PDF

    75329P

    Abstract: 75329s 75329G HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S HUF75329S3ST EIA rs 481 286
    Text: HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 42A, 55V The HUF75329 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S HUF75329 1-800-4-HARRIS 75329P 75329s 75329G HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S HUF75329S3ST EIA rs 481 286 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    75329P

    Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S TB334
    Text: HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 Features Description • 42A, 55V • Ultra Low On-Resistance, rDS ON = 0.025Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S TB334, HUF75329 1-800-4-HARRIS 75329P 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S TB334 PDF

    75329p

    Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
    Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 PDF

    75329p

    Abstract: 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS
    Text: interrii HUF75329G3, HUF75329P3, HUF75329S3S January 2000 Data Sheet 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS PDF

    75329p

    Abstract: 75329G HUF75329G3
    Text: in t e is il HUF75329G3, HUF75329P3, HUF75329S3S D a ta S h e e t J a n u a ry 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		HUF75329G3, HUF75329P3, HUF75329S3S HUF7S329P3, HUF7S329S3S AN7254 AN7260. 75329p 75329G HUF75329G3 PDF

    75329s

    Abstract: HUF75329P3 19407
    Text: HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S HARRIS S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 42A, 55V • Ultra Low On-Resistance, ros ON = 0.025(2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S TB334, HUF75329 1-800-4-HARRIS 75329s HUF75329P3 19407 PDF