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Rochester Electronics LLC IRFF211 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFF211	Bulk			260	1 - 10 - 100 - 1000 $1.15 10000 $1.15	Buy Now
New Jersey Semiconductor Products, Inc. IRFF213
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF213		152,126		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
New Jersey Semiconductor Products, Inc. IRFF212
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF212		18,674		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
New Jersey Semiconductor Products, Inc. IRFF210
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF210		9,671		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
New Jersey Semiconductor Products, Inc. IRFF211
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF211		350		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now

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IRFF21 Datasheets (68)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFF210	International Rectifier	HEXFET Transistor	Original	PDF
IRFF210	Intersil	2.2A, 200V, 1.500 ?, N-Channel Power MOSFET	Original	PDF
IRFF210	Semelab	N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package	Original	PDF
IRFF210	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRFF210	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFF210	International Rectifier	TO-39 Package N-Channel HEXFET	Scan	PDF
IRFF210	International Rectifier	TO-39 N-Channel HEXFET Power MOSFETs	Scan	PDF
IRFF210	International Rectifier	N-CHannel Power MOSFET in a TO-39 Package, 200 Volt, 1.5 Ohm	Scan	PDF
IRFF210	Motorola	European Master Selection Guide 1986	Scan	PDF
IRFF210	Motorola	N-Channel, Enhancement TMOS FET Transistors	Scan	PDF
IRFF210	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFF210	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFF210	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFF210	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

IRFF210	Unknown	FET Data Book	Scan	PDF
IRFF210	Siliconix	N-Channel Enhancement Mode Transistor	Scan	PDF
IRFF210	Vishay Siliconix	Shortform Siliconix Datasheet	Short Form	PDF
IRFF210R	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFF210R	International Rectifier	Rugged Series Power MOSFETs - N-Channel	Scan	PDF
IRFF210R	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

IRFF21 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRFF210 Abstract: No abstract text available Text: IRFF210 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	IRFF210 O205AF) 11-Oct-02 IRFF210	PDF
Untitled Abstract: No abstract text available Text: IRFF210, IRFF211, IRFF212, IRFF213 S E M I C O N D U C T O R 1.8A, and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	IRFF210, IRFF211, IRFF212, IRFF213 TA17442. IRFF213	PDF
2n6784 Abstract: No abstract text available Text: 2N6784 IRFF210 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • REPETITIVE AVALANCHE RATING	Original	2N6784 IRFF210 O-205AF)	PDF
IRFF210 Abstract: TB334 Text: IRFF210 Data Sheet January 2002 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.2A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	IRFF210 TA17442. IRFF210 TB334	PDF
IRF 725 Abstract: IRFF210 JANTX2N6784 JANTXV2N6784 Text: PD - 90424C IRFF210 JANTX2N6784 JANTXV2N6784 REF:MIL-PRF-19500/556 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF210 BVDSS 200V RDS(on) 1.5Ω ID 2.25A  The HEXFET technology is the key to International	Original	90424C IRFF210 JANTX2N6784 JANTXV2N6784 MIL-PRF-19500/556 O-205AF) IRF 725 IRFF210 JANTX2N6784 JANTXV2N6784	PDF
Untitled Abstract: No abstract text available Text: PD - 90424C IRFF210 JANTX2N6784 JANTXV2N6784 REF:MIL-PRF-19500/556 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF210 BVDSS 200V RDS(on) 1.5Ω ID 2.25A  The HEXFET technology is the key to International	Original	90424C IRFF210 JANTX2N6784 JANTXV2N6784 MIL-PRF-19500/556 O-205AF) electrical252-7105	PDF
IRFF210 Abstract: TB334 Text: IRFF210 Data Sheet March 1999 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 2.2A, 200V Formerly developmental type TA17442. Ordering Information PACKAGE 1887.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,	Original	IRFF210 TA17442. IRFF210 TB334	PDF
Untitled Abstract: No abstract text available Text: IRFF210 Data Sheet Title FF 0 bt 2A, 0V, 00 m, March 1999 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	IRFF210 IRFF210 O-205AF TB334	PDF
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065	PDF
CMF65-5.556K Abstract: No abstract text available Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,	Original	MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K	PDF
25CC Abstract: IRFF210 IRFF213 Text: MOTOROLA SC XSTRS/R F la g D \| b3b?aS4 OQflt.703 T \| T -S f-Ö ? IRFF210 IRFF213 M AXIM UM RATIN GS Symbol IRFF210 IRFF213 Unit Drain-Source Voltage Vd s s 200 150 Vdc Drain-Gate Voltage R q s = 1.0 m il Vd g r 200 150 Vdc Rating Gate-Source Voltage + 20	OCR Scan	IRFF210 IRFF213 IRFF213 O-205AF) 25CC	PDF
IRFF210 Abstract: IRFF211 Text: IMEF RELD EFFECT POWER TRANSISTOR IRFF210,211 2.2 AM PERES 200,150 VOLTS RD S O N = 1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	IRFF210 33K/W RFF211â IRFF211	PDF
IRFF210 Abstract: IRFF211 IRFF212 IRFF213 Text: Standard Power MOSFETs- IRFF210, IRFF211, IRFF212, IRFF213 File N um b er N-Channel Enhancement-Mode Power Field-Effect Transistors 1.8A and 2.2A, 150V - 200V rosioni = 1.50 and 2.40 N-C H A N N EL EN HANCEM ENT MODE Features: •	OCR Scan	IRFF210, IRFF211, IRFF212, IRFF213 -3374I IRFF212and IRFF213 IRFF210 IRFF211 IRFF212	PDF
IRFF213 Abstract: SY 180/4 IRFF212 Text: FUT RELD EFFECT POWER TRANSISTOR IRFF212,213 1.8 AMPERES 200,150 VOLTS RDS ON = 2-4 n Preliminary T his series of N -C h a n n e l E n h a n c e m e n t-m o d e P ow er M O SFETs utilizes G E ’s advanced Power D M O S technology to achieve low on-resistance with excellent device rugged	OCR Scan	IRFF212 IRFF213-Â IRFF213 SY 180/4	PDF

IRFF210 Abstract: IRFF211 IRFF212 Text: löE D SILICONIX INC • ÖSS473S QOmflQl 0 ■ IRFF210/211/212/213 f T ’Silfco n ix JJm in c o rp o ra te d N-Channel Enhancement Mode Transistors "T-IA -07 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS 'W •d (A) IRFF210 200 1.5 2.2 IRFF211	OCR Scan	E5473S IRFF210/211/212/213 O-205AF IRFF210 IRFF211 IRFF212 1RFF213	PDF
lm 3907 Abstract: IRFF211 IRFF213 IRFF210 IRFF212 3907 mosfet G346 AAABS Text: HE D I 4ÔSS455 OOQTBbM 5 \| i f - 7 Data Sheet No. PD-9.353E in te r n a tio n a l RE CT IFIER INTERNATIONAL RECTIFIER IO R HEXFET TRANSISTORS IRFF21 O IRFF21< 1 N-CHANNEL POWER MOSFETs TÜ-39 PACKAGE IRFF212 IRFF213 200 Volt, 1.5 Ohm HEXFET Features: The HEXFET® technology is the key to International	OCR Scan	ss455 IRFF213 G-346 lm 3907 IRFF211 IRFF213 IRFF210 IRFF212 3907 mosfet G346 AAABS	PDF
diode deg avalanche zo 150 20 Abstract: IRFF210R IRFF211R IRFF212R IRFF213R Text: Rugged Power MOSFETs_ IRFF210R, IRFF211R, IRFF212R, IRFF213R File Num ber 2025 Avalanche Energy Rated N-Channel Power MOSFETs 1.8A and 2.2A, 150V-200V N-CHANNEL ENHANCEMENT MODE rDs on = 1.5Q and 2.40 D Features: • Single pulse avalanche energy rated	OCR Scan	IRFF210R, IRFF211R, IRFF212R, IRFF213R 50V-200V 92CS-Â IRFF212R IRFF213R diode deg avalanche zo 150 20 IRFF210R IRFF211R	PDF
Untitled Abstract: No abstract text available Text: w vys S IRFF210, IRFF211, IRFF212, IRFF213 S e m ico n d ucto r y 7 1.8A, and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.8A and 2.2A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	IRFF210, IRFF211, IRFF212, IRFF213	PDF
h20 mosfet Abstract: No abstract text available Text: HARRI S SENI COND SECTOR bôE D • 4302271 0DS111E HAFRFRIS 4TT ■ HAS PCF210W F2 1OD S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-NI	OCR Scan	0DS111E PCF210W Mil-Std-750, IRF610 IRFD210 IRFF210 2N6784 PCF210D 1-800-4-HARRIS h20 mosfet	PDF
2N6788 motorola Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111 Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles	OCR Scan	IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111	PDF
IRF09120 Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120 Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ	OCR Scan	IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120	PDF
Untitled Abstract: No abstract text available Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical	OCR Scan		PDF
MMBF112L Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty	OCR Scan	06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211	PDF
F111 Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 Text: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss	OCR Scan	1RFD9120 IRFD9123 IRF09210 O-205AF IRFF222 1RFF223 T0-205AF 1RFF230 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120	PDF

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IRFF21 Search Results

IRFF21 Price and Stock

Rochester Electronics LLC IRFF211

New Jersey Semiconductor Products, Inc. IRFF213

New Jersey Semiconductor Products, Inc. IRFF212

New Jersey Semiconductor Products, Inc. IRFF210

New Jersey Semiconductor Products, Inc. IRFF211

IRFF21 Datasheets (68)

IRFF21 Datasheets Context Search

IRFF210

Untitled

2n6784

IRFF210

IRF 725

Untitled

IRFF210

Untitled

IRF460

CMF65-5.556K

25CC

IRFF210

IRFF210

IRFF213

IRFF210

lm 3907

diode deg avalanche zo 150 20

Untitled

h20 mosfet

2N6788 motorola

IRF09120

Untitled

MMBF112L

F111