Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXGP12N60B Search Results

    SF Impression Pixel

    IXGP12N60B Price and Stock

    IXYS Corporation IXGP12N60B

    IGBT 600V 24A 100W TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGP12N60B Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation IXGP12N60BD1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IXGP12N60BD1 18
    • 1 $23.9642
    • 10 $23.9642
    • 100 $22.766
    • 1000 $22.766
    • 10000 $22.766
    		Buy Now

    IXGP12N60B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGP12N60B IXYS 600V HiPerFAST IGBT Original PDF

    IXGP12N60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGD32N60B-5X

    Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
    Text: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43


    Original     		PDF IXGD28N30-43 IXGD40N30-5X IXGD12N60B-3X IXGD31N60-4X IXGD41N60-5X IXGD60N60-7Y IXGD200N60B-9X IXGD2N100-1M IXGD4N100-1T IXGD8N100-2L IXGD32N60B-5X ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: n i x Y S Preliminary Data Sheet IXGA12N60B IXGP12N60B HiPerFAST IGBT VCES 600 V 24 A 2.1 V 55 ns ^C25 V CE sat typ t Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V vCGR ^ = 25°C to 150°C; RGE = 1 Mi2 600 V Maximum Ratings VGES Continuous ±20


    OCR Scan     		PDF IXGA12N60B IXGP12N60B

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Preliminary Data Sheet VCES IXGA12N60B IXGP12N60B HiPerFAST IGBT ^C25 600 V 24 A “ VCE sat typ Maximum Ratings Symbol TestConditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£2 600 V TO-263 AA (IXGA) v Continuous


    OCR Scan     		PDF IXGA12N60B IXGP12N60B O-263

    IXGH24N50B

    Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
    Text: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out­ line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500


    OCR Scan     		PDF IXGD28N30-43 IXGD40N30-5X IXGD12N60B-33 IXGD31N60-4X IXGD41N60-5X IXGD60N60-7X IXGD200N60-9X IXGD8N100-2L IXGD12N100-33 IXGD17N100-4T IXGH24N50B IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100

    Ixgr50n60

    Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
    Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)


    OCR Scan     		PDF O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C