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    Ruland Manufacturing Co Inc KM-4-4-SS

    4MM X 4MM STAINLESS KEYSTOCK
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    DigiKey KM-4-4-SS Bag 1
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    TURCK Inc VB2-1/2FKM 4.4/S651

    Vb2 |Turck VB2-1/2FKM 4.4/S651
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    TURCK Inc GSDA/GKDA/RKM 44/S1055

    Tdp |Turck GSDA/GKDA/RKM 44/S1055
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    TURCK Inc VB2-FSM 4.4/2FKM 4.4/S651

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    Neutron USA VB2-FSM 4.4/2FKM 4.4/S651 30
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    TURCK Inc VB2-PSG 4M-1/2FKM 4.4/S651

    Vb2 |Turck VB2-PSG 4M-1/2FKM 4.4/S651
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    KM44S Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44S16030BT-G/F10 Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G_F10 Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G/F8 Samsung Electronics 125MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G_F8 Samsung Electronics 125MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G/FH Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G_FH Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G/FL Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G_FL Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-GF10 Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S16030CT-G/F10 Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G_F10 Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G/F7 Samsung Electronics 143MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G_F7 Samsung Electronics 143MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G/F8 Samsung Electronics 125MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G_F8 Samsung Electronics 125MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G/FA Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S16030CT-G/FH Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S16030CT-G/FH Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G_FH Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G/FL Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Original PDF

    KM44S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44S4020C CMOS SDRAM Revision History Revision .4 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		KM44S4020C PC100 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44S16020B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		KM44S16020B PC100 10/AP PDF

    RA12

    Abstract: No abstract text available
    Text: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May 1999 KM44S64230A CMOS SDRAM Revision History Revision 0.1 Jan. 05, 1999


    Original     		KM44S64230A 256Mbit A10/AP RA12 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44S16030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM44S16030C 4M x 4Bit x 4 Banks Synchronous DRAM


    Original     		KM44S16030C 10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44S64230A Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Jan., 1999 • PC133 first published. REV. 0 Jan. '99 Preliminary PC133 CMOS SDRAM KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply


    Original     		KM44S64230A PC133 KM44S64230A A10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44S32030A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May. 1999 KM44S32030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		KM44S32030A 128Mbit 10/AP PDF

    KM44S32030B

    Abstract: No abstract text available
    Text: KM44S32030B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM44S32030B CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		KM44S32030B 128Mbit A10/AP KM44S32030B PDF

    RA12

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNG's high performance CMOS


    Original     		KM44S64230A KM44S64230A A10/AP RA12 PDF

    KM44S4020CT

    Abstract: KM44S4020
    Text: KM44S4020C CMOS SDRAM Revision History Revision .4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		KM44S4020C PC100 KM44S4020CT KM44S4020 PDF

    Untitled

    Abstract: No abstract text available
    Text: shrink-TSOP KM44S32030AN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 April 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.1 Apr. 1999 shrink-TSOP


    Original     		KM44S32030AN 128Mb KM44S32030AT, 54-sTSOP PDF

    RA12

    Abstract: No abstract text available
    Text: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 JUN 1999 KM44S64230A CMOS SDRAM Revision History Revision 0.1 Jan. 05, 1999


    Original     		KM44S64230A 256Mbit A10/AP RA12 PDF

    54PIN

    Abstract: KM44S32030
    Text: Preliminary CMOS SDRAM KM44S32030 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S32030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		KM44S32030 KM44S32030 A10/AP 54PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM44S32030 8M X 4Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S32030 is 134,217,728 bits synchronous high data • JEDEC standard 3.3V pow er supply • LVTTL com patible with m ultiplexed address rate Dynam ic RAM organized as 4 x 8,388,608 w ords by 4 bits,


    OCR Scan     		KM44S32030 44S32030 10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M X 4bit X 4 Banks Synchronous DRAM LVTTL Revision 0.2 January 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.2 Jan. '99 KM44S64230A CMOS SDRAM R evision H isto ry


    OCR Scan     		KM44S64230A 256Mbit A10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM44S64230A 16M X 4Bit X 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		KM44S64230A KM44S64230A 10/AP PDF

    ka 2843

    Abstract: No abstract text available
    Text: KM44S16030B CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S16030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS technol­


    OCR Scan     		KM44S16030B KM44S16030B A10/AP ka 2843 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44S4020B CMOS SDRAM 2M x 4Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION JEDEC standard 3.3V power supply The KM44S4020B is 16,777.216 bits synchronous high data LVTTL compatible with multiplexed address rate Dynamic RAM organized as 2 x 2,097,152 words by 4 bits,


    OCR Scan     		KM44S4020B KM44S4020B 10/AP PDF

    8A1 op

    Abstract: KM44S16030A
    Text: KM44S16030A CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION . JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS Latency 2 & 3 Burst Length (1, 2, 4, 8 & full page)


    OCR Scan     		KM44S16030A KM44S16030A 10/AP 8A1 op PDF

    XC5L

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		KM416S16230A 16Bit KM44S64230A 10/AP XC5L PDF

    REF04

    Abstract: No abstract text available
    Text: KM44S 1603 1 AT SDRAM ELECTRONICS 4M x 4Bit x 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.


    OCR Scan     		KM44S KM44S16030A/KM44S16031A KM44S16031AT REF04 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44S16030B CMOS SDRAM Revision History Revision .3 N ovem ber 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not m eet PC100 characteristics . So AC param eter/C haracteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage C urrents (Inputs / DQ) are changed.


    OCR Scan     		KM44S16030B PC100 a10/AP PDF

    KM44S16030AT

    Abstract: DD3320
    Text: KM44S16030AT SDRAM ELECTRONICS 4M x 4Bit x 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.


    OCR Scan     		KM44S16030AT KM44S16030A/KM44S16031A 44S16030AT) KM44S16030AT DD3320 PDF

    18c5t

    Abstract: 5.6V
    Text: KM44S16020B CMOS SDRAM 8M x 4Bitx 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs CAS latency 2 & 3


    OCR Scan     		KM44S16020B KM44S16020B 10/AP 18c5t 5.6V PDF

    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks


    OCR Scan     		KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030 PDF