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    Ruland Manufacturing Co Inc KM-4-4-SS

    4MM X 4MM STAINLESS KEYSTOCK
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    DigiKey KM-4-4-SS Bag 1
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    TURCK Inc VB2-FSM 4.4/2FKM 4.4/S651

    Vb2 |Turck VB2-FSM 4.4/2FKM 4.4/S651
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    Neutron USA VB2-FSM 4.4/2FKM 4.4/S651 50
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    TURCK Inc VB2-FSM 4.4/2FKM 4.4/S651 (ALTERNATE: U0098-1)

    Connector Splitter Parallel Wired 4 Conductor 2 Way Splitter, VB2-FSM 4.4 Series | Turck VB2-FSM 4.4/2FKM 4.4/S651
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    RS VB2-FSM 4.4/2FKM 4.4/S651 (ALTERNATE: U0098-1) Bulk 93 10 Weeks 1
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    TURCK Inc VB2-1/2FKM 4.4/S651 (ALTERNATE: U0163-61)

    Cordset, VB2-1/2FKM 4.4/S651, U0163-61 | Turck VB2-1/2FKM 4.4/S651
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    RS VB2-1/2FKM 4.4/S651 (ALTERNATE: U0163-61) Bulk 10 Weeks 1
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    TURCK Inc GSDA/GKDA/RKM 44/S1055 (ALTERNATE: U2-22637)

    GSDA/GKDA/RKM 44/S1055, U2-22637 | Turck GSDA/GKDA/RKM 44/S1055
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    RS GSDA/GKDA/RKM 44/S1055 (ALTERNATE: U2-22637) Bulk 16 Weeks 1
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    KM44S Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44S16030BT-G/F10 Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G_F10 Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G/F8 Samsung Electronics 125MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G_F8 Samsung Electronics 125MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G/FH Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G_FH Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G/FL Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030BT-G_FL Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-GF10 Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S16030CT-G/F10 Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G_F10 Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G/F7 Samsung Electronics 143MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G_F7 Samsung Electronics 143MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G/F8 Samsung Electronics 125MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G_F8 Samsung Electronics 125MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G/FA Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S16030CT-G/FH Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S16030CT-G/FH Samsung Electronics 100MHz, -1.0 to 4.6V, 1W, 50mA, 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G_FH Samsung Electronics 100MHz -1.0 to 4.6V 1W 50mA 4M x 4-bit x 4 banks synchronous CMOS SDRAM Scan PDF
    KM44S16030CT-G/FL Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Original PDF

    KM44S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM44S4020C CMOS SDRAM Revision History Revision .4 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM44S4020C PC100

    Untitled

    Abstract: No abstract text available
    Text: KM44S16020B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM44S16020B PC100 10/AP

    RA12

    Abstract: No abstract text available
    Text: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May 1999 KM44S64230A CMOS SDRAM Revision History Revision 0.1 Jan. 05, 1999


    Original     		PDF KM44S64230A 256Mbit A10/AP RA12

    Untitled

    Abstract: No abstract text available
    Text: KM44S16030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM44S16030C 4M x 4Bit x 4 Banks Synchronous DRAM


    Original     		PDF KM44S16030C 10/AP

    Untitled

    Abstract: No abstract text available
    Text: KM44S64230A Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Jan., 1999 • PC133 first published. REV. 0 Jan. '99 Preliminary PC133 CMOS SDRAM KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply


    Original     		PDF KM44S64230A PC133 KM44S64230A A10/AP

    Untitled

    Abstract: No abstract text available
    Text: KM44S32030A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May. 1999 KM44S32030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		PDF KM44S32030A 128Mbit 10/AP

    KM44S32030B

    Abstract: No abstract text available
    Text: KM44S32030B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM44S32030B CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		PDF KM44S32030B 128Mbit A10/AP KM44S32030B

    RA12

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNG's high performance CMOS


    Original     		PDF KM44S64230A KM44S64230A A10/AP RA12

    KM44S4020CT

    Abstract: KM44S4020
    Text: KM44S4020C CMOS SDRAM Revision History Revision .4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM44S4020C PC100 KM44S4020CT KM44S4020

    Untitled

    Abstract: No abstract text available
    Text: shrink-TSOP KM44S32030AN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 April 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.1 Apr. 1999 shrink-TSOP


    Original     		PDF KM44S32030AN 128Mb KM44S32030AT, 54-sTSOP

    RA12

    Abstract: No abstract text available
    Text: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 JUN 1999 KM44S64230A CMOS SDRAM Revision History Revision 0.1 Jan. 05, 1999


    Original     		PDF KM44S64230A 256Mbit A10/AP RA12

    54PIN

    Abstract: KM44S32030
    Text: Preliminary CMOS SDRAM KM44S32030 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S32030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF KM44S32030 KM44S32030 A10/AP 54PIN

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM44S32030 8M X 4Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S32030 is 134,217,728 bits synchronous high data • JEDEC standard 3.3V pow er supply • LVTTL com patible with m ultiplexed address rate Dynam ic RAM organized as 4 x 8,388,608 w ords by 4 bits,


    OCR Scan     		PDF KM44S32030 44S32030 10/AP

    Untitled

    Abstract: No abstract text available
    Text: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M X 4bit X 4 Banks Synchronous DRAM LVTTL Revision 0.2 January 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.2 Jan. '99 KM44S64230A CMOS SDRAM R evision H isto ry


    OCR Scan     		PDF KM44S64230A 256Mbit A10/AP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM44S64230A 16M X 4Bit X 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		PDF KM44S64230A KM44S64230A 10/AP

    ka 2843

    Abstract: No abstract text available
    Text: KM44S16030B CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S16030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS technol­


    OCR Scan     		PDF KM44S16030B KM44S16030B A10/AP ka 2843

    Untitled

    Abstract: No abstract text available
    Text: KM44S4020B CMOS SDRAM 2M x 4Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION JEDEC standard 3.3V power supply The KM44S4020B is 16,777.216 bits synchronous high data LVTTL compatible with multiplexed address rate Dynamic RAM organized as 2 x 2,097,152 words by 4 bits,


    OCR Scan     		PDF KM44S4020B KM44S4020B 10/AP

    8A1 op

    Abstract: KM44S16030A
    Text: KM44S16030A CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION . JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS Latency 2 & 3 Burst Length (1, 2, 4, 8 & full page)


    OCR Scan     		PDF KM44S16030A KM44S16030A 10/AP 8A1 op

    XC5L

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		PDF KM416S16230A 16Bit KM44S64230A 10/AP XC5L

    REF04

    Abstract: No abstract text available
    Text: KM44S 1603 1 AT SDRAM ELECTRONICS 4M x 4Bit x 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF KM44S KM44S16030A/KM44S16031A KM44S16031AT REF04

    Untitled

    Abstract: No abstract text available
    Text: KM44S16030B CMOS SDRAM Revision History Revision .3 N ovem ber 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not m eet PC100 characteristics . So AC param eter/C haracteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage C urrents (Inputs / DQ) are changed.


    OCR Scan     		PDF KM44S16030B PC100 a10/AP

    KM44S16030AT

    Abstract: DD3320
    Text: KM44S16030AT SDRAM ELECTRONICS 4M x 4Bit x 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF KM44S16030AT KM44S16030A/KM44S16031A 44S16030AT) KM44S16030AT DD3320

    18c5t

    Abstract: 5.6V
    Text: KM44S16020B CMOS SDRAM 8M x 4Bitx 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs CAS latency 2 & 3


    OCR Scan     		PDF KM44S16020B KM44S16020B 10/AP 18c5t 5.6V

    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030