Untitled
Abstract: No abstract text available
Text: MG600Q1US41 HIGH POWER SW ITCHING APPLICATIONS. MOTOR CO N TRO L APPLICATIONS. High Input Impedance H ighspeed : tf= 0.5/iS Max. Low Saturation Voltage : V cE (sat) = 4.0V (Max.) Enhancement-Mode : TOSHIBA 2-109E1A Outline (See page 3 for the device outline)
|
OCR Scan
|
MG600Q1US41
2-109E1A
MG60QQ1US41
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA MG600Q1US41 TO SH IBA G IR M O D U L E M G 6 SILICON N C H A N N EL IGBT Q 1 U S 4 1 HIGH POW ER SW ITCHING APPLICATIONS. M O T O R CONTRO L APPLICATIONS. • High Input Impedance • H ig h sp e e d : tf=0.5/us Max. • Low Saturation Voltage : V c jj(s a y = 4.0V (Max.)
|
OCR Scan
|
MG600Q1US41
2-109E1A
|
PDF
|
MG600Q1US41
Abstract: 2-109E1A
Text: T O S H IB A MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 6 0 0 Q 1 US41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5,«s Max. Low Saturation Voltage : VCE(sat)~4-0V (Max.) Enhancement-Mode
|
OCR Scan
|
MG600Q1US41
MG600Q1
2-109E1A
100//S
MG600Q1US41
2-109E1A
|
PDF
|
MG600Q1US41
Abstract: No abstract text available
Text: T O SH IB A MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG600Q1US41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5^s Max. Low Saturation Voltage : VQE(sat) = 4.0V (Max.) Enh ancement-Mode
|
OCR Scan
|
MG600Q1US41
2-109E1A
MG600Q1US41
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG600Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. EQUIVALENT CIRCUIT High Input Impedance High Speed : tf= 0.5/*s Max. C Low Saturation Voltage : V cE(sat) = 4-0V(Max.)
|
OCR Scan
|
MG600Q1US41
2-109E1A
000A//
--10V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O S H IB A MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG600Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. H ig h In p u t Im pedance EQUIVALENT CIRCUIT H ig h Speed : tf=0.5/*s M ax. C Low Satu ratio n Voltage : V c E (s a t) = 4-0V(M ax.)
|
OCR Scan
|
MG600Q1US41
2-109E1A
|
PDF
|
GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
|
OCR Scan
|
2-99A1A
2-99B1A
GT250101
MG150J2YS40
MG75Q2YS11
MG400Q1US11
MG200Q1JS9
MG75J2YS40
MG50J6ES40
MG200Q2YS91
MG75J6ES40
mg100q2ys9
|
PDF
|
GT80J101
Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412
|
OCR Scan
|
GT8J101
GT8J102
GT8Q101
GT15J101
GT15J102
GT8Q102
MG300J2YS50
MG400J1US51
MG400J2YS50
MG800J1US51
GT80J101
MG75Q2YS40
MG360V1US41
MG100Q2YS42
MG75J6ES50
GT60M301
MG15J6ES40
MG300Q2YS40
MG150Q2YS40
mg100j6es5
|
PDF
|
G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
|
OCR Scan
|
GT10G101
GT10J301
GT10J311
GT10Q301
GT10Q
GT15G101
GT15J101
GT15J102
GT15J103
GT15Q101
G50Q2YS40
MG8Q6ES42
GT8Q102
mg300q1us41
GT60M301
MIG50J904H
gt15j103
MIG30J103H
MG25Q6ES50A
mg150q1js
|
PDF
|
MG75J2YS40
Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
|
OCR Scan
|
2-109C1A
MG50J6ES50
MG75J6ES50
2-94A2A
MG100J6ES50
MG50Q6ES11
MIG150J201H
MIG200J201H
MIG75Q201H
MIG100Q201H
MG75J2YS40
MG100J2YS45
MG50J2YS45
MG150J2YS45
MG300Q1US
MG400Q1US11
MG400J2YS40
MG150J2YS40
MG200Q2YS1
MG200J2YS45
|
PDF
|