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    MG800J1US51 Search Results

    MG800J1US51 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG800J1US51 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG800J1US51 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG800J1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 8 0 0 J 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance • Enhancement-Mode • High Speed : ^ = 0 .3 0 /^ Max. (I0 = 8OOA)


    OCR Scan     		PDF MG800J1US51 15/d5 2-109E1A 100//s! jS125â

    Untitled

    Abstract: No abstract text available
    Text: MG800J1US51 HIGH POW ER SW ITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode High Speed : tf= 0.30//s Max. (l£ = 800A) trr = 0.15//s (Max.) (Ip = 800A)


    OCR Scan     		PDF MG800J1US51 30//s 15//s 2-109E1A

    MG800J1US51

    Abstract: S5 3000
    Text: TOSHIBA MG800J1US51 M G 8 0 0 J 1 US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : tf=0.30;i*s Max. (Iç; = 800A)


    OCR Scan     		PDF MG800J1US51 MG800J1 15//s 2-109E1A MG800J1US51 S5 3000

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG800J1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 8 0 0 J 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : ^ = 0 .3 0 /^ Max. (I0 = 8OOA)


    OCR Scan     		PDF MG800J1US51 15/d5 2-109E1A jS125

    VG-800A

    Abstract: No abstract text available
    Text: TOSHIBA MG800J1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 8 0 0 J 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : tf= 0.30^s Max. (Ic = 800A)


    OCR Scan     		PDF MG800J1US51 2-109E1A VG-800A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA M G800J1US51 TOSHIBA GTR MODULE SILICON N CHAN N EL IGBT MG 8 0 0 J 1 US51 HIGH POWER SW ITCHING APPLICATIO NS M OTOR CO N TRO L APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance • Enhancem ent-M ode • High Speed : t f= 0 .3 0 ,« s Max. ( Iç = 800A)


    OCR Scan     		PDF G800J1US51 MG800J1US51

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG40001US41

    Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
    Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50


    OCR Scan     		PDF MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG400J2VS50 MG2SJ6ES40 MG40001US41 MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50

    GT80J101

    Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
    Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412


    OCR Scan     		PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45