MT3S03AT
Abstract: 014E 200E 800E
Text: MT3S03AT SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S03AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0
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MT3S03AT
MT3S03AT
014E-02
260E-10
800E-13
346E-14
014E
200E
800E
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transistor 14315
Abstract: 14315
Text: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB at f = 2 GHz • High gain: gain = 8dB (at f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
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MT3S03AT
transistor 14315
14315
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of ic 8038
Abstract: MT3S03AT IC 7486 ic 7815
Text: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB typ. (at f = 2 GHz) • High gain: gain = 8dB (typ.) (at f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)
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MT3S03AT
of ic 8038
MT3S03AT
IC 7486
ic 7815
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specifications of ic 8038
Abstract: working of ic 8038 for semiconductor IC 7106
Text: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB at f = 2 GHz • High gain: gain = 8dB (at f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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MT3S03AT
specifications of ic 8038
working of ic 8038
for semiconductor IC 7106
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MT6L58AFS
Abstract: MT3S03AFS MT3S03AT MT3S06FS MT3S06T
Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05
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MT6L58AFS
MT3S03AFS)
MT3S06FS)
MT3S03AT
MT3S06T
MT6L58AFS
MT3S03AFS
MT3S03AT
MT3S06FS
MT3S06T
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working of ic 8038
Abstract: marking 5241 MT3S03AT ic 7815 IC 7486 specifications of ic 8038 8250 bridge
Text: MT3S03AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB at f = 2 GHz • High gain: gain = 8dB (at f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C)
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MT3S03AT
002oducts
working of ic 8038
marking 5241
MT3S03AT
ic 7815
IC 7486
specifications of ic 8038
8250 bridge
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Untitled
Abstract: No abstract text available
Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 6 2 5 3
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MT6L58AFS
MT3S06T
MT3S06FS)
MT3S03AT
MT3S03AFS)
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Untitled
Abstract: No abstract text available
Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S03AT (MT3S06FS) (MT3S03AFS) Maximum Ratings (Ta = 25°C) Characteristic
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MT6L58AFS
MT3S06T
MT3S06FS)
MT3S03AT
MT3S03AFS)
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IC 7486
Abstract: 534-1 MAG 14241 MT3S03AT ic 7815 f 9444 TA 7129 13765
Text: MT3S03AT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S03AT VHF~UHF 帯低電圧動作•低位相雑音タイプ • 単位: mm 雑音特性が優れています。: NF = 1.4dB 標準 , |S21e|2 = 8dB (標準) (f = 2 GHz)
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MT3S03AT
IC 7486
534-1 MAG
14241
MT3S03AT
ic 7815
f 9444
TA 7129
13765
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Untitled
Abstract: No abstract text available
Text: MT6L03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L03AT VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Two devices are built in to the super-thin and ultra super mini 6 pins package: TU6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are
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MT6L03AT
MT3S03AS
MT3S03AT)
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Untitled
Abstract: No abstract text available
Text: MT6L52AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L52AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Three-pins (SSM/TESM) mold
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MT6L52AE
MT3S03AS
MT3S03AT)
MT3S04AS
MT3S04AT)
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Untitled
Abstract: No abstract text available
Text: MT6L03AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L03AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are
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MT6L03AE
MT3S03AS
MT3S03AT)
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Untitled
Abstract: No abstract text available
Text: MT6C03AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6C03AE VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are
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MT6C03AE
MT3S03AS
MT3S03AT)
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Untitled
Abstract: No abstract text available
Text: MT6L58AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6
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MT6L58AS
MT3S06S
MT3S06T)
MT3S03AS
MT3S03AT)
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MT3S03AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.4 dB at f = 2 GHz TTirrV» fio i n JJlg ll V ^ U lll
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MT3S03AT
IS21I2
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MT3S03AT MT3S03AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS 1.2 ±0 .0 5 Low Noise Figure : NF = 1.4 dB at f = 2 GHz TTirrV» fio i n J-J-lgll V^Ulll 0.8 ± 0.05 U.111
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MT3S03AT
IS21I2
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working of ic 8038
Abstract: working of IC 7486 8250 ic pin for semiconductor IC 7106 MT3S03AT IC 7486 ic 8038 specifications of ic 8038
Text: TO SH IBA MT3S03AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ±0 .0 5 • Low Noise Figure : NF = 1.4 dB at f = 2 GHz * High Gain 0.8 ± 0.05 MAXIMUM RATINGS (Ta = 25°C)
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MT3S03AT
working of ic 8038
working of IC 7486
8250 ic pin
for semiconductor IC 7106
MT3S03AT
IC 7486
ic 8038
specifications of ic 8038
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MT6C03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C03AE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 B-
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MT6C03AE
MT3S03AS
MT3S03AT)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MT6L58AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L58AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in in O O o o MOUNTED DEVICES
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MT6L58AE
MT3S06S
MT3S06T)
MT3S03AS
MT3S03AT)
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MT6C03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C03AE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 B-
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MT6C03AE
MT3S03AS
MT3S03AT)
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2SC5256
Abstract: MT3S03AS MT3S03AT MT6L51AE
Text: MT6L51AE TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AE V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES
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MT6L51AE
2SC5256
5256FT)
MT3S03AS
MT3S03AT)
2SC5256
MT3S03AS
MT3S03AT
MT6L51AE
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MT3S03AS
Abstract: MT3S03AT MT3S04AS MT3S04AT MT6L52AE
Text: TOSHIBA MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 V in in in OO o 2 o o - F MOUNTED DEVICES
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MT6L52AE
MT3S03AS
MT3S03AT)
MT3S04AS
MT3S04AT)
MT3S03AS
MT3S03AT
MT3S04AS
MT3S04AT
MT6L52AE
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MT3S03AS
Abstract: MT3S03AT MT6L03AT
Text: TO SH IBA MT6L03AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L03AT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES
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MT6L03AT
MT3S03AS
MT3S03AT)
MT3S03AS
MT3S03AT
MT6L03AT
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MT3S03AS
Abstract: MT3S03AT MT6C03AE
Text: TO SH IBA MT6C03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C03AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 5 MOUNTED DEVICES B- Q1/Q2 : SSM (TESM)
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MT6C03AE
MT3S03AS
MT3S03AT)
MT3S03AS
MT3S03AT
MT6C03AE
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