NE24483
Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC
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Original
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S01543
AF367
AF280S
2N2999
2N2415
2N2416
2SA1245
BFQ24
NE59333
BFQ52
NE24483
NE38883
BFT93R
NE13783,
ATF-10135
BFT92R
BF936
CFX21
to119
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PDF
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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Original
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68B09
SN74ALS04BN
SN74ALS08N
SN74ALS00AN
CA3046
uA733
LM311P
LM318
CA3094
78H05
cp4071
data sheet IC 7408
2N4891
IC 7408
MDA970A2
MDA2500
1854-0071
MDA2502
2N4342
IC TTL 7400
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PDF
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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Original
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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PDF
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2SA1224
Abstract: E90115
Text: PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.5 GHz The NE901 Series of PNP silicon epitaxial transistors is designed for high frequency amplifier and high speed switch
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OCR Scan
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NE74014
NE90100
NE90115
NE901
665um)
462um)
690um)
IS12I
2SA1224
E90115
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PDF
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2SA1224
Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
Text: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de
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OCR Scan
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00GS512
NE90100
NE90115
NE74014
NE901
NE90115
2SA1224
NEC JAPAN 3167
1S955
NE74014
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series
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OCR Scan
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NE74000
NE74014
NE740
NE90115
MIL-S-19500.
IS12I
427SB5
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PDF
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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OCR Scan
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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PDF
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73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7
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OCR Scan
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NE46134
NE85634
NE46734
NE85634
NE46134
NE85619
NE68119
73412
NE64535
CHIP transistor 348
fvh 38
p08c
NE68039
NE889
NE02135
NE64500
NE24318
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PDF
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2SC1253
Abstract: 2SC1251 NEC k 2134 transistor NE74000 NE74014 NE74020 NE90115 CTO-39 2143E 1321E12
Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D 7 z ll- â S ' NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTION AND APPLICATIONS FEATURES The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent in
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OCR Scan
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MS7414
NE74000
NE74014
NE74020
NE740
2SC1253
2SC1251
NEC k 2134 transistor
NE74020
NE90115
CTO-39
2143E
1321E12
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PDF
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hitachi transistor fn651
Abstract: fn651 thyristor Q406 C745 TRANSISTOR ST C744 c311c c744 diodes ld 33 c744 A68KSA30X TELEVISION EHT TRANSFORMERS
Text: PA HITACHI 35TX10B/CZ41 31UX5B/CY45 31CX4B/CY44 27UX5B/C745 27CX4B/C744 27CX3B/C743 SERVICE MANUAL § No. 0039 R/C: ¡A 3 L X U CLU-851GR CLU-692GR CLU-691GR CAUTION: Before servicing this chassis, it is important that the service technician read the "Safety Precautions" and "Product Safety Notices" in this Service Manual.
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OCR Scan
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35TX10B/CZ41
31UX5B/CY45
31CX4B/CY44
27UX5B/C745
27CX4B/C744
27CX3B/C743
Q0501
Q3801
Q3802
hitachi transistor fn651
fn651
thyristor Q406
C745 TRANSISTOR
ST C744
c311c
c744 diodes
ld 33 c744
A68KSA30X
TELEVISION EHT TRANSFORMERS
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES DESCRIPTION • HIGH GAIN BANDW IDTH PRO DUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for w ide bandw idth V H F and U H F am plifiers. Excellent intermodulation characteristics and low noise make the series
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OCR Scan
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NE74000
NE74014
NE740
NE90115
quality31
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series
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OCR Scan
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NE74000
NE74014
NE740
NE90115
quali16
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PDF
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