AN7254

Abstract: AN7260 RFP8N20L TB334
Contextual Info: RFP8N20L Data Sheet Title FP8 0L bt A, 0V, 00 m, gic vel, Cha el wer OST) utho July 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic

TA9291

Abstract: RFP8N20 36161 RFM8N18 RFM8N20 RFP8N18 2csm
Contextual Info: Standard Power M O S F E T s _ RFM8N18, RFM8N20, RFP8IM18, RFP8N20 File N um ber 1447 N-Channel Enhancemient-Mode Power Field-Effect Transistors 8 A, 180 V — 200 V o rDs on : 0.5 O Features: • ■ m m m SOA is power-dissipation lim ited

AN7254

Abstract: AN7260 RFP8N20L TB334
Contextual Info: RFP8N20L Data Sheet July 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

IN18

Abstract: RFM8N18 RFM8N20 RFP8N18 RFP8N20 TA9292
Contextual Info: 3875081 G E" SOLID STATE 01 Standard Power MOSFETs D eT| 3Û7SD01 001Ö137 3 _ I_ _ RFM8N18, RFM8N20, RFP8N18, RFP8N20 F ile N u m b e r 1447 N-Channel Enhancement-Mode Power Field-Effect Transistors

2C337

Abstract: A953 RFP8N18L Transistor 5C5 RFM8N18L RFM8N20L RFP8N20L rg 625
Contextual Info: 3875081 G E SOLID STATE 01 ÜE|3fl7SDâl GDlfl44G 4 Logic-Level Power MOSFETs _ ?"//' — - - RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L File Number 1514 N-Channel Logic Level Power Field-Effect Transistors L2 FET

RFP8N18L

Abstract: RFM8N18L TA9535 RFP8N20L RCA 518 rca 519 RFM8N20L RFP8M20L
Contextual Info: Logic-Level Power MOSFETs_ RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L F ile N u m b e r 15114 N-Channel Logic Level Power Field-Effect Transistors L2 FET 8 A, 180 V and 200 V rDs(on): 0.5fi Features: • Design optim ized fo r 5 volt gate drive

Contextual Info: RFP8N20L interdi Da ta S h e e t J u l y 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features Formerly developmental type TA09534. PACKAGE T O -2 2 0 A B • rDS ON = 0 .6 0 0 0 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS,

AN7254

Abstract: AN7260 RFP8N20L TB334
Contextual Info: RFP8N20L Data Sheet January 2002 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

Contextual Info: RFP8N20L Semiconductor April 1999 Data Sheet 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET • 8A, 200V RFP8N20L PACKAGE TO -220AB • rDS ON = 0.600i2 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP8N20L 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A,200V This N-Channel enhancement mode silicon gate power field

IAf630

Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

72Z4

Abstract: 8N18L RFP8N18L RFP8N20L RFP mosfets
Contextual Info: h A R f r is R FM 8 N 18L /2 0 L R FP8 N 18 L /2 0 L N -Channel Logic Level Power Field-Effect Transistors L2 FET A u g u s t 1991 Package Features T O -20 4 A A BOTTOM VIEW • 8A, 1 8 0V and 2 0 0 V • rD S (0 N ) = ° - 5 a • Design O p tim ized for 5V G ate Drives

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

irf540n irf640

Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Contextual Info: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

rfp50n06 equivalent

Abstract: BUZ71A equivalent buz11 equivalent BUZ71 equivalent IRF9540 equivalent RFP12N10L equivalent irf740 equivalent ICM755 IRF640 equivalent 555 timer for lm555cn
Contextual Info: Intersil Timers, Oscillators, Rectifiers and MOSFETs Timers/Oscillators Mfr.Õs Type Max. Output Frequency Astable Description Package Type LM555CN Timer for Time Delays and Oscillator Applications 10 KHz (Typ.) +4.5 V to +18 V @ 15 mA 8 Lead PDIP ICM7555IBA

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

8n20

Abstract: 8N18 rfm8n
Contextual Info: H A J R R RFM 8N18/8N20 RFP8N18/8N20 I S HARRIS SEMICOND SECTOR 5fc>E J> m 43G2E71 0Q41b7fl TTÔ IHAS August 1991 N-Channel Enhancement Mode Power Field Effect Transistors 7 ^ 3 4 */ Packages Features T0-204AA • 8A, 180V and 200V • rDS(on = o .s n • S O A is Pow er-D issipation Limited

Contextual Info: H A R R I S SEflICOND SECT OR böE D • 4 3 0 2 27 1 0 0 5 1 0 1 0 TTfi ■ PCF8N20W P^jFfäN20D H a r r is HAS S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated 'if • Contact Metallization - Gate and Source - Aluminum