SGSP47 Search Results

SGSP474

Contextual Info: 30E t • 7iai237 0030021 S ■ _ / = 7 S G S - T H O M S O N 5 T ? ' ,H t " SM S G S P 4 7 4 ^ 7 # [ÜDffi Q [E[L[i(g¥^(ó)iD(gÍ SG SP 475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 fi

Contextual Info: 3QE D 7=12^237 D0301SD G T '^ k S G S-THOMSON SGS-THOMSON SGSP477 CHIP ¡y N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N l/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils

SGSP477

Contextual Info: SGS-THOMSON m SGSP477 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM • DIE SIZE: • METALLIZATION: Top Back 221 x 221 mils Al - max 7 mils M s P-Vapox 5 6 x 4 3 mils 18 x 18 mils c T 16 ± 2 mils • RECOMMENDED WIRE BONDING: Gate 6100 Â

SGSP471

Contextual Info: Æ 7 SGS-THOMSON SGSP471 SGSP472 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on SGSP471 SGSP472 100 V 80 V 0.075 ß 0.05 n 30 A 35 A • • • • HIGH SPEED SWITCHING APPLICATIONS 8 0 - 100 VOLTS - FOR DC/DC CONVERTERS HIGH CURRENT > 1V DROP AT 20A

SP571

Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
Contextual Info: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

SGSP479

Abstract: sgsp478 P479 p479 to218 SGSP579 75637 DM 7449 SGSP478/P578
Contextual Info: S G S-THOtlSôN ^ m m ^ ^ * J 73C _ 07 E D | 7^5^637 iH ^ t3 ° - 7 ^ 3 ^ V 3 - G D Î 7 6i 4 b |t 1 f 1/SGSP478/P479j I« a 3 ;SGSP578/P579 ' N_CHANNEL poWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate

sgsp471

Contextual Info: SGSP471 SGSP472 ¿ Z J SCS-THO M SON * J Æ . HDmmiOTMWÊS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP471 SGSP472 Voss 100 V 80 V ^ D S o n 0.075 n 0.05 Î2 Id 30 A 35 A • • • • HIGH SPEED SWITCHING APPLICATIONS 8 0 - 100 VOLTS - FOR DC/DC CONVERTERS

350w schematic diagram motor control

Abstract: vdgr test circuit SGSP479
Contextual Info: S G S - T t i O M S O N M ‘J Æ „ S G S P 4 7 9 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP479 V dss 500 V ^D S on 0.7 ß Id 9A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - 500V FOR OFF-LINE SMPS HIGH VO LTAG E-9A FOR UP TO 350W SMPS

SGSP477

Contextual Info: f Z 7 SGS-THOMSON SGSP477 CHIP ^ 7 # llD æ O IlL lK g T O R O D Ê i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils

Contextual Info: 3 G E J> • 7 ci 2 cî 5 3 7 D S C S -T H O M S O N HLIim RDD gi 3 D G M 1 b ■ T \ 3 A - 1 3 s 6 S’ T!,0MS0K SG SP479 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP479 VDSS 500 V RDS(on 0.7 ß 9A • • • • HIGH SPEED SWITCHING APPLICATIONS

sgsp477

Abstract: MC-0076
Contextual Info: /S T SGS-THOMSON 1 # ^ s - THoMSON SGSP477 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM 'D IE SIZE: 221 x221 mils • METALLIZATION: Top Al Back A u /C r/N i/A u ' BACKSIDE THICKNESS: 6100 A 1 DIE THICKNESS: 16 ± 2 mils ’ PASSIVATION:

SGSP474

Contextual Info: r^ 7 S G S -T H O M S O N # » » H H H O T M lO Ê i SG SP474 SG SP475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on *D SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 U 9 A 10 A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - FOR OFF-LINE SMPS

sgsp474

Contextual Info: SGSP474 SGSP475 Æ 7 SGS-THOMSON ^ 7 # RíflD IS Q IILll©M)RDD©Í N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) •d SGSP474 SGSP475 450 V 400 V 0.7 fl 0.55 fi 9 A 10 A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - FOR OFF-LINE SMPS

transistor di 556

Abstract: SGSP477
Contextual Info: T SGS-THOMSON ^7# MÊfôimiiËïrMMÊI SGSP477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on SGSP477 200 V 0.17 fi Id 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING

SGSP477

Contextual Info: 3QE D • 7 ci 2 ci 2 3 7 QÜ3QQ35 f Z 7 S G S -T H O M S O N ^ 7 # [ ¡ « [ ^ » Ë ig T M l O t g S □ ■ 'T - 3 9 H 3 * g s -t h o m s o n S G S P 477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss ^DS on b SGSP477 200 V 0.17 ß 20 A

SGSP477

Abstract: bg-25V SMPS CIRCUIT DIAGRAM 5V 20A AY5V tcl tv circuit
Contextual Info: f Z 7 SGS-THOMSON s6 s - th o m s o n ^7# SG SP477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP477 VDss 200 V ^D S on 0.17 ß b 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING

D2080

Abstract: SGSP477
Contextual Info: SGS-TUOMSON SGSP477 llö » [ a i g ir C M O ( g § N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP477 V dss 200 V ^DS(on 0.17 n •d 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING

SGSP479

Abstract: 350w schematic diagram motor control lg SMPS circuit SMPS CIRCUIT DIAGRAM lg
Contextual Info: n Z 7 S G S -T H O M S O N SGSP479 RjflöMilLi gTr^ iO i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on 'd SGSP479 500 V 0.7 a 9A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - 500V FOR OFF-LINE SMPS HIGH VOLTAGE-9A FOR UP TO 350W SMPS

IRF740 smd

Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
Contextual Info: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36

ISOWATT220

Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30

sgs*P381

Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Contextual Info: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177

BUV48 SE

Abstract: SGSD00036 kkz 10
Contextual Info: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous

high power pulse generator with mosfet

Abstract: N and P MOSFET sgsp221
Contextual Info: r=7 SCS-THOMSON JM iM R D [E] Q E[L[i©ir[^(0)[iD(§S a p p lic a t io n n o t e A BRIEF LOOK AT STATIC dV/dt IN POWER MOSFETS INTRODUCTION The normal safe operating area o f POWER MOSFETS may be insufficient when used in very fast sw itching circuits, such as those required in

486T250-3C8

Abstract: Ferrox EC52-3C8 L123 regulator SGSP479 EC52-3C8 ec52-3c8 ee lm723 LM723 pin details IF30-3C8 LM723 regulator BLOCK DIAGRAM
Contextual Info: APPLICATION NOTE A SECOND-GENERATION IC SWITCH MODE CONTROLLER OPTIMIZED FOR HIGH FREQUENCY POWER MOS DRIVE INTRODUCTION Since the introduction of the SG1524 in 1976, integrated circuit controllers have played an important role in the rapid development and exploitation of