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    SI4288DY Price and Stock

    Vishay Intertechnologies SI4288DY-T1-GE3

    DUAL N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SI4288DY-T1-GE3)
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    Avnet Americas SI4288DY-T1-GE3 Reel 7,500 8 Weeks 2,500
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    SI4288DY-T1-GE3 Ammo Pack 7 Weeks, 4 Days 1
    • 1 $1.33
    • 10 $1.05
    • 100 $0.849
    • 1000 $0.849
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    Mouser Electronics SI4288DY-T1-GE3 15,325
    • 1 $1.33
    • 10 $1.01
    • 100 $0.977
    • 1000 $0.977
    • 10000 $0.866
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    Verical SI4288DY-T1-GE3 10,000 2,500
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    SI4288DY-T1-GE3 5,000 2,500
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    Arrow Electronics SI4288DY-T1-GE3 10,000 8 Weeks 2,500
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    SI4288DY-T1-GE3 5,000 8 Weeks 2,500
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    • 10000 $1.2819
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    Newark SI4288DY-T1-GE3 Reel 20,000 2,500
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    • 10000 $0.622
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    SI4288DY-T1-GE3 Cut Tape 1,708 1
    • 1 $0.728
    • 10 $0.728
    • 100 $0.667
    • 1000 $0.667
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    TTI SI4288DY-T1-GE3 Reel 2,500 2,500
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    TME SI4288DY-T1-GE3 4,613 1
    • 1 $1.31
    • 10 $1.17
    • 100 $0.94
    • 1000 $0.86
    • 10000 $0.86
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    Avnet Asia SI4288DY-T1-GE3 10 Weeks 2,500
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    EBV Elektronik SI4288DY-T1-GE3 9 Weeks 2,500
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    Vishay Intertechnologies SI4288DY-T1-GE3.

    Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:40V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:9.2A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Vishay SI4288DY-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI4288DY-T1-GE3. Reel 2,500
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    Vishay Siliconix SI4288DY-T1-GE3

    40 Volts 9.2 Amps 3.1 Watts | Siliconix / Vishay SI4288DY-T1-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI4288DY-T1-GE3 Bulk 2,500
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    • 10000 $1.28
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    Quest Components SI4288DY-T1-GE3 40
    • 1 $1.715
    • 10 $1.372
    • 100 $0.8575
    • 1000 $0.8575
    • 10000 $0.8575
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    ES Components SI4288DY-T1-GE3
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    New Advantage Corporation SI4288DY-T1-GE3 5,000 1
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    • 10000 $0.6
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    SI4288DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4288DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 9.2A 8SO Original PDF

    SI4288DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S10-28

    Abstract: Si4288DY
    Text: SPICE Device Model Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4288DY 18-Jul-08 S10-28

    Untitled

    Abstract: No abstract text available
    Text: Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4288DY 2002/95/EC Si4288DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si4288

    Abstract: No abstract text available
    Text: Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4288DY 2002/95/EC Si4288DY-T1-GE3 11-Mar-11 si4288

    Untitled

    Abstract: No abstract text available
    Text: Si4288DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4288DY AN609, 1234m 9196u 2191m 1132u 3313m 9361m 2223m

    si4288

    Abstract: SO-8 gs 069 si42 SI4288DY-T1-GE3
    Text: Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4288DY 2002/95/EC Si4288DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4288 SO-8 gs 069 si42

    Untitled

    Abstract: No abstract text available
    Text: Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4288DY 2002/95/EC Si4288DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836