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Vishay Siliconix SIHB24N65EFT1-GE3 N-CHANNEL 650V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB24N65EFT1-GE3	Digi-Reel	2,817		1	1 $6.68 10 $4.502 100 $6.68 1000 $6.68 10000 $6.68	Buy Now
	SIHB24N65EFT1-GE3	Cut Tape	2,817		1	1 $6.68 10 $4.502 100 $6.68 1000 $6.68 10000 $6.68	Buy Now
	SIHB24N65EFT1-GE3	Reel	1,600		800	1 - 10 - 100 - 1000 $2.7 10000 $2.7	Buy Now
New Advantage Corporation	SIHB24N65EFT1-GE3		800		1	1 - 10 - 100 - 1000 $3.28 10000 $3.28	Buy Now
Vishay Siliconix SIHB24N65E-GE3 MOSFET N-CH 650V 24A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB24N65E-GE3	Tube	1,868		1	1 $6.61 10 $6.61 100 $6.61 1000 $2.6625 10000 $2.6625	Buy Now
Vishay Siliconix SIHB24N65E-E3 MOSFET N-CH 650V 24A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB24N65E-E3	Tube			1,000	1 - 10 - 100 - 1000 $2.6625 10000 $2.6625	Buy Now
Bristol Electronics	SIHB24N65E-E3		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIHB24N65EF-GE3 MOSFET N-CH 650V 24A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB24N65EF-GE3	Tube			1,000	1 - 10 - 100 - 1000 $2.7 10000 $2.7	Buy Now
Vishay Siliconix SIHB24N65ET1-GE3 MOSFET N-CH 650V 24A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB24N65ET1-GE3	Reel			800	1 - 10 - 100 - 1000 $2.6625 10000 $2.6625	Buy Now

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SIHB24N65E Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHB24N65EF-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 24A D2PAK		Original	PDF
SIHB24N65E-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 24A D2PAK		Original	PDF
SIHB24N65ET1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 24A TO263		Original	PDF
SIHB24N65ET5-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 24A TO263		Original	PDF

SIHB24N65E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V 0.145 Qg max. (nC)	Original	SiHB24N65E 2002/95/EC O-263) 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145	Original	SiHB24N65E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145	Original	SiHB24N65E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145	Original	SiHB24N65E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Generation Two • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V 0.145 Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) •	Original	SiHB24N65E 2002/95/EC O-263) 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) • • • • • 0.145 122 Qgs (nC) 21 Qgd (nC) 37	Original	SiHB24N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V 0.145 Qg max. (nC)	Original	SiHB24N65E 2002/95/EC O-263) 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145	Original	SiHB24N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) • • • • • 0.145 122 Qgs (nC) 21 Qgd (nC)	Original	SiHB24N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHB24N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHB24N65E AN609, 7113m 5283m 0346m 9810u 28-Nov-14	PDF
TO-247 FULLPAK Package Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction	Original	enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF