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    SIHB24N65E Search Results

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    SIHB24N65E Price and Stock

    Vishay Siliconix SIHB24N65EFT1-GE3

    N-CHANNEL 650V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB24N65EFT1-GE3 Digi-Reel 2,819 1
    • 1 $6.68
    • 10 $4.502
    • 100 $6.68
    • 1000 $6.68
    • 10000 $6.68
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    SIHB24N65EFT1-GE3 Cut Tape 2,819 1
    • 1 $6.68
    • 10 $4.502
    • 100 $6.68
    • 1000 $6.68
    • 10000 $6.68
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    SIHB24N65EFT1-GE3 Reel 1,600 800
    • 1 -
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    • 100 -
    • 1000 $2.7
    • 10000 $2.7
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    New Advantage Corporation SIHB24N65EFT1-GE3 800 1
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    • 1000 $3.28
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    Vishay Siliconix SIHB24N65E-GE3

    MOSFET N-CH 650V 24A D2PAK
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    DigiKey SIHB24N65E-GE3 Tube 1,868 1
    • 1 $6.61
    • 10 $6.61
    • 100 $6.61
    • 1000 $2.6625
    • 10000 $2.6625
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    Vishay Siliconix SIHB24N65E-E3

    MOSFET N-CH 650V 24A D2PAK
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    DigiKey SIHB24N65E-E3 Tube 1,000
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    • 1000 $2.6625
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    Bristol Electronics SIHB24N65E-E3 100
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    Vishay Siliconix SIHB24N65EF-GE3

    MOSFET N-CH 650V 24A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB24N65EF-GE3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.7
    • 10000 $2.7
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    Vishay Siliconix SIHB24N65ET5-GE3

    MOSFET N-CH 650V 24A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB24N65ET5-GE3 Reel 800
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    • 1000 $2.6625
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    SIHB24N65E Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHB24N65EF-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 24A D2PAK Original PDF
    SIHB24N65E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 24A D2PAK Original PDF
    SIHB24N65ET1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 24A TO263 Original PDF
    SIHB24N65ET5-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 24A TO263 Original PDF

    SIHB24N65E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V 0.145 Qg max. (nC)


    Original
    PDF SiHB24N65E 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original
    PDF SiHB24N65E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original
    PDF SiHB24N65E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original
    PDF SiHB24N65E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Generation Two • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V 0.145 Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) •


    Original
    PDF SiHB24N65E 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) • • • • • 0.145 122 Qgs (nC) 21 Qgd (nC) 37


    Original
    PDF SiHB24N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V 0.145 Qg max. (nC)


    Original
    PDF SiHB24N65E 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original
    PDF SiHB24N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) • • • • • 0.145 122 Qgs (nC) 21 Qgd (nC)


    Original
    PDF SiHB24N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB24N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    PDF SiHB24N65E AN609, 7113m 5283m 0346m 9810u 28-Nov-14

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original
    PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836