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    TP3N60 Search Results

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    TP3N60 Price and Stock

    Rochester Electronics LLC HGTP3N60A4

    IGBT 600V 17A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTP3N60A4 Tube 54,613 216
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    Rochester Electronics LLC HGTP3N60A4D

    N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTP3N60A4D Tube 19,968 226
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    • 1000 $1.33
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    Rochester Electronics LLC HGTP3N60C3

    6A, 600V, N-CHANNEL IGBT
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    DigiKey HGTP3N60C3 Bulk 5,993 579
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    Rochester Electronics LLC HGTP3N60B3

    7A, 600V, UFS N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTP3N60B3 Bulk 2,000 579
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    Rochester Electronics LLC HGTP3N60B3R4724

    7A, 600V, UFS N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTP3N60B3R4724 Bulk 800 579
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    Find more TP3N60 price and stock on Findchips.com

    TP3N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTP3N6

    Abstract: No abstract text available
    Text: r r z S G S -T H O M S O N *7# » » E tL ie T O K f ! TP3N60 TP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S on M TP3N60 M TP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VO LTAG E FOR OFF-LINE APPLICATIO NS


    OCR Scan     		PDF MTP3N60 MTP3N60FI TP3N60 TP3N60FI 100KHz ATT22Q 500ms MTP3N6

    Untitled

    Abstract: No abstract text available
    Text: * 5 SGS-THOMSON ilLiCTIKMDe 7 TP3N60 TP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V M TP3N60 M TP3N60FI • . . ■ ■ dss 600 V 600 V R DS on Id < 2.5 a < 2.5 a 3.9 A 2.5 A TYPICAL RDS(on) = 2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF mTP3N60 MTP3N60FI TP3N60 TP3N60FI MTP3N60FI

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    G3N60B

    Abstract: No abstract text available
    Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, TP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and TP3N60B3 are MOS gated high


    OCR Scan     		PDF HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 GTD3N60B3S, HGT1S3N60B3S HGTP3N60B3 115ns 1-800-4-HARRIS G3N60B

    3N60C3D

    Abstract: g3n60c3d 3n60c3 3n60c transistor TE 901 equivalent Zener Diode LT 432 S3N60C3
    Text: HARRIS TP3N60C3D , HGT1S3N60C3D, HGT1S3N60C3DS S E M I C O N D U C T O R 6A , 6 0 0 V , U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t Di o d es Features Packaging JEDEC TO-22QAB • 6 A, 600V at Tc = 25 °C


    OCR Scan     		PDF HGTP3N60C3D HGT1S3N60C3D, HGT1S3N60C3DS 130ns O-22QAB HGTP3N60C3D, HGT1S3N60C3DS -800-4-H 3N60C3D g3n60c3d 3n60c3 3n60c transistor TE 901 equivalent Zener Diode LT 432 S3N60C3

    hg 3a 1004

    Abstract: BT 139 F applications note
    Text: TP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS ¡H A R R IS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features JEDEC TO -220AB • 6A, 600V at Tc = +25°C EMITTER • 600V Switching SOA Capability


    OCR Scan     		PDF HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS -220AB ay1996 130ns HGT1S3N60C3DS 1-800-4-HARRIS hg 3a 1004 BT 139 F applications note

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    TP3N60

    Abstract: p3n60 TP3N55 3n60 MOSFEt 3n60 transistor 3N55 mtp3n55 3N60
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N60 M T P 3N 55 M T P 3N 60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TM O S POWER FETs 3 AMPERES rDS on = 2 5 OH M S 550 and 600 VOLTS These TM O S P ow er FETs are designed fo r high vo ltag e , high


    OCR Scan     		PDF MTM/MTP3N60, MTP3N55 TP3N60 p3n60 TP3N55 3n60 MOSFEt 3n60 transistor 3N55 mtp3n55 3N60

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    3N60A4D

    Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688
    Text: HGT1S3N60A4DS, TP3N60A4D in t e r r i i J a n u a ry . D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the TP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    OCR Scan     		PDF HGT1S3N60A4DS HGTP3N60A4D TA49327. TA49369. 3N60A4D TA49369 HGT1S3N60A4DS9A 5LEC A9688

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP3N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3N 60E T M O S E -F E T ™ High Energy Pow er FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to


    OCR Scan     		PDF MTP3N60E/D 21A-09

    G3N60B3

    Abstract: Transistor No C110 transistor C110 tr c110 HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 LD26
    Text: HGTD3N60B3S, HGT1S3N60B3S, TP3N60B3 interrii J a n u a ry . m D ata S h eet 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and TP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.


    OCR Scan     		PDF HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 HGT1S3N60B3S HGTP3N60B3 G3N60B3 Transistor No C110 transistor C110 tr c110 HGTD3N60B3S HGTD3N60B3S9A LD26

    mtp3n

    Abstract: TP3N60 A1412
    Text: Si TYPE . TP3N60 TP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss TP3N60 TP3N60FI . . . . SGS-THOMSON ELiOT ö«S Id R üSion 600 V 600 V 2.5 2.5 ii il 3.9 A 2.5 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED R EPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF MTP3N60 MTP3N60FI MTP3N60/FI mtp3n TP3N60 A1412