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    NXP Semiconductors MTP3N60E

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    onsemi MTP3N60E

    Tmo Spwr 600V .5R To220 |Onsemi MTP3N60E
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    Corning Cable Systems SOC-MTP-3N-OM4

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    Motorola Semiconductor Products MTP3N120E

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    Motorola Semiconductor Products MTP3N25E

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    MTP3N Datasheets (126)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MTP3N08 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP3N08L Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    MTP3N08L Motorola Switchmode Datasheet Scan PDF
    MTP3N08L Unknown FET Data Book Scan PDF
    MTP3N08L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP3N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP3N100 Motorola European Master Selection Guide 1986 Scan PDF
    MTP3N100 Motorola N-channel TMOS power FET. 1000 V, 3 A, Rds(on) 4 Ohm. Scan PDF
    MTP3N100 Motorola Switchmode Datasheet Scan PDF
    MTP3N100 Unknown FET Data Book Scan PDF
    MTP3N100 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP3N100E On Semiconductor TMOS E-FET Power Field Effect Transistor Original PDF
    MTP3N100E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP3N100E On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 1000V, 1.5A, Pkg Style TO220AB Scan PDF
    MTP3N100E/D On Semiconductor TMOS POWER FET 3.0 AMPERES 1000 VOLTS Original PDF
    MTP3N100E-D On Semiconductor TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Original PDF
    MTP3N10L Motorola Switchmode Datasheet Scan PDF
    MTP3N10L Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    MTP3N10L Unknown FET Data Book Scan PDF
    MTP3N10L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    ...

    MTP3N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTP3N25E
    Text: MOTOROLA Order this document by MTP3N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP3N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 250 VOLTS


    Original     		PDF MTP3N25E/D MTP3N25E MTP3N25E/D* AN569 MTP3N25E

    MTP3N55

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N55 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF MTP3N55 O-220 MTP3N55

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP3N95 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF MTP3N95 O-220

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF MTP3N60 O-220

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N75 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF MTP3N75 O-220

    UC3845BN USED CIRCUIT

    Abstract: MBR370 UC3845BN AN1327 AN569 MOC8102 MTP3N120E MUR430 MTP3N120E-D mosfet transistor 800 volts.400 amperes
    Text: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS


    Original     		PDF MTP3N120E/D MTP3N120E UC3845BN USED CIRCUIT MBR370 UC3845BN AN1327 AN569 MOC8102 MTP3N120E MUR430 MTP3N120E-D mosfet transistor 800 volts.400 amperes

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N50 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF MTP3N50 O-220

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N45 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF MTP3N45 O-220

    mtp3n6

    Abstract: mosfet 600V 30A
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP3N60E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-220 MTP3N60E mtp3n6 mosfet 600V 30A

    MTP3N60

    Abstract: MTP3N6 MTP3N60FI
    Text: MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V 600 V < 2.5 Ω < 2.5 Ω 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF MTP3N60 MTP3N60FI 100oC O-220 ISOWATT220 MTP3N60 MTP3N6 MTP3N60FI

    mtp3n6

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI VDSS RDS(on) ID 600 V 600 V < 2.5Q < 2.5 Q. 3.9 A


    Original     		PDF MTP3N60 MTP3N60FI 100QC O-220 ISOWATT220 100ms mtp3n6

    Untitled

    Abstract: No abstract text available
    Text: , Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM3N60 MTP3N55 MTP3N60 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS TMOS POWER FETs 3 AMPERES 'DS(on) = 2.5 OHMS


    Original     		PDF MTM3N60 MTP3N55 MTP3N60 104AA

    2N3904

    Abstract: AN569 MTP3N60E
    Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS


    Original     		PDF MTP3N60E/D MTP3N60E MTP3N60E/D* 2N3904 AN569 MTP3N60E

    511 MOSFET TRANSISTOR motorola

    Abstract: MTP3N100E transistor 131-6 AN569
    Text: MOTOROLA Order this document by MTP3N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP3N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1000 VOLTS


    Original     		PDF MTP3N100E/D MTP3N100E MTP3N100E/D* 511 MOSFET TRANSISTOR motorola MTP3N100E transistor 131-6 AN569

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF MTP3N60 MTP3N60FI MTP3N60/FI ISQWATT220

    MTP3N80

    Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
    Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5


    OCR Scan     		PDF T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP3N80 MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60

    K 3267 fet transistor

    Abstract: transistor 600 volts.50 amperes MTP3N100 221A-06 TMOS Power FET transistor 400 volts.50 amperes
    Text: M O T O R O L A SC X S T R S / R F bflE » • b 3 b ? E 5 M □□'löbST 7S5 MOTbi MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP3N100 Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N -C hannel Enhancem ent M o d e S ilic o n Gate TM O S POWER FET


    OCR Scan     		PDF MTP3N100 21A-06 O-220AB K 3267 fet transistor transistor 600 volts.50 amperes MTP3N100 221A-06 TMOS Power FET transistor 400 volts.50 amperes

    Untitled

    Abstract: No abstract text available
    Text: No. IRF620 IRF621 IRF623 MTP7N18 IRF720 IRF723 MTP3N35 MTP3N40 IRF820 IRF622 IRF823 MTP2N45 MTP2N50 Cm 600 300 80 B3 2.5 15 600 300 80 B3 1.2 2.5 15 600 300 80 B3 0.25 1.2 2.5 15 600 300 80 B3 4.5 1 0.7 3.5 15 600 300 80 B3 2 4.5 1 0.7 3.5 15 600 300 80 2


    OCR Scan     		PDF IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 IRF722 IRF723

    MTP3N40

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N40 P o w er Field E ffe c t Tran sistor IM-Channel Enhancem ent-M ode Silicon G ate TM O S T This TM O S P ow er FET is desig n ed fo r h ig h vo ltag e , high speed p o w e r sw itch in g a pp licatio n s such as sw itch in g regu la to rs, c o n ­


    OCR Scan     		PDF MTP3N40 MTP3N40

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP3N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP3N50E TMOS E-FET™ High Energy Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to


    OCR Scan     		PDF MTP3N50E/D MTP3N50E 21A-06

    MTP8N10

    Abstract: MTP25N10 mtp7n06 MTP20N10 MTP7N15 irf510 MTP12N10 MTP5N06 MTP5N15 MTP20N08
    Text: POWER TRAN SISTO RS — T M O S PLASTIC continued Plastic TM OS Power MOSFETS — TO-220AB (continued) C A S E 221A -02 rD S(on) (Ohm s) M ax (Amp) 150 2.4 1.25 20 2.5 1.5 MTP3N15 3 50 2.5 IRF623 4 40 0.9 MTP5N15 5 50 0.8 IRF621 4 40 75 0.7 3.5 M TP7N15


    OCR Scan     		PDF O-220AB 21A-02 IRF613 IRF611 MTP3N15 IRF623 MTP5N15 IRF621 MTP7N15 IRF633 MTP8N10 MTP25N10 mtp7n06 MTP20N10 irf510 MTP12N10 MTP5N06 MTP20N08

    TP3N55

    Abstract: No abstract text available
    Text: M O T O RO LA SC XSTRS/R F m e I .0 t.3 t,7 E S 4 0 0 0 ^ 7 0 Ö I MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTM3N60 MTP3N55 MTP3N60 Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S POWER FETs


    OCR Scan     		PDF O-220AB 204AA TP3N55

    MTP6N55

    Abstract: MTP2P45 IRF840 SELECTION GUIDE MTP1N55 MTP2N90 MTP4N90 MTP8N45 irf8408 MTP3N80 irf840
    Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5


    OCR Scan     		PDF T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP6N55 MTP2P45 IRF840 SELECTION GUIDE MTP1N55 MTP8N45 irf8408 MTP3N80 irf840

    CA111

    Abstract: IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722 MTP7N18 MTP7N20
    Text: This Type No. IRF621 IRF622 IRF623 By MTP7N18 Its MTP7N20 IRF721 MTP3N35 MTP3N40 IRF820 IRF822 IRF823 MTP2N45 MTP2N50 T0-220 37 TO-220 (37) T 0 22 0 (37) T0-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) T 0 22 0 (37) TO-220 (37) T0-220 (37) 70-220 (37) TO-220


    OCR Scan     		PDF DU37114 T-39-Ã IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 CA111 IRF722