CE5C

Abstract: CEA 243 A12C A14C ZZ1A18 6803 microprocessor pcetc
Contextual Info: DALLAS SEMICONDUCTOR CORP BTE D m 2 b l 4] i 3D Q0033t>E S 1 3 DAL 0S5340 n~'5Z-!>V 0.5 DS5340 V40 Softener Chip DJy.!LAS SEMICONDUCTOR FEATURES PIN DESCRIPTION • Provides softness for V40-based systems • Adapts to task-at-hand: -Converts up to 672K bytes of CMOS

Contextual Info: DS5303 PRODUCT PREVIEW DALLAS DS5303 6303 Softener Chip s e m ic o n d u c t o r FEATURES PACKAGE OUTLINE • Provides softness for HD6303-based systems: •iinnnnnnnnnnnnnnn r 80 79 n 77 76 7S 74 73 72 71 70 6» 66 67 66 <6 > 64 — IWJ7PUT 1 2 63 I D VCCI

a01494

Abstract: A19C Z3A18 ZDA17
Contextual Info: r z ^ T j S G S -T H O M S O N # . M28F841 IM 1 0 g [S [1 0 = [lO T (S M lB ( g S 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALLS1ZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each

Contextual Info: 3.0 V & 3.3 V S u p p ly HM65V8512 Series 524288-Word x 8-Bit High Speed Pseudo Static RAM Description Ordering Information Type No. Access tim e HM65V8512DFP-12 120 ns HM65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns

Contextual Info: 5 7 . S G S -T H O M S O N M28F841 llll g [s 5 (Q I[L I T O © lJÌ!lD (g Ì 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 5V± 0.5V SUPPLY VOLTAGE

Contextual Info: HN58V65AI Series HN58V66AI Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-759 Z Preliminary Rev. 0.0 Mar. 12, 1997 Description The Hitachi HN58V65AI series and HN58V66AI series are a electrically erasable and programmable

Contextual Info: 3.0 V & 3.3 V Supply HM65V8512 Series 524288-W ord X 8-B it High Speed Pseudo Static RAM Ordering Information Description Type No. Access time HM65V8512DFP-12 120 ns HM65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns

IA15

Contextual Info: G 7. SGS-1H 0 MS 0 N M28V841 HQÊISOIlLiÊratôIRiOlgS LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH M EM O RY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSCJP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE

Contextual Info: HN58V65AI Series HN58V66AI Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-759 Z Preliminary, Rev. 0.0 Mar. 12,1997 Description The Hitachi HN58V65AI series and HN58V66AI series are a electrically erasable and programmable

Contextual Info: HN58V256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-616B Z Rev. 2.0 Mar. 18, 1997 Description The Hitachi HN58V256A is electrically erasable and programmable ROM organized as 32768-word x 8bit. It has realized high speed low power consumption and high reliability by employing advanced MNOS

Contextual Info: S G S -T H O M S O N D M a iC T G S tM O ! M 2 8 F 1 0 2 1 Megabit 64K x 16, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 1OOpA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10[is

Contextual Info: SGS-THOMSON M27V402 R f f lD ^ [ llL liO T IjîO ll i LOW VOLTAGE _ 4 Megabit 256K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ LOW POW ER ’’CMOS” CONSUMPTION:

M28F102

Abstract: PLCC44 A1006
Contextual Info: /T 7 S G S -T H O M S O N M28F102 ^7m» ! ÆD gfâ(S!ËiLl5(@Î.rl}3(Q)lfSDÊi 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 90ns - LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

a14ct

Abstract: 28f102 M28F102 A10CZ
Contextual Info: SGS-THOMSON M28F102 1 Mb 64K x 16, Bulk Erase FLASH MEMORY DATA B RIEFING • ■ ■ • ■ « • ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE In 1s RANGE

HM658512LP-10V

Abstract: HM658512LP10
Contextual Info: HM658512 Series 524288-Word x 8-Bit High Speed Pseudo Static RAM Features Ordering Information • Single 5 V ±10% • Highspeed - Access time CE access time: 80/85/100/120 ns - Cycle time Random read/write cycle time: 130/160/190 ns • Low power - 250 mW typ active

68hc11a

Contextual Info: JU N i l 1993 DS5311FP PRELIM INARY PALLAS DS5311FP 68HC11 Softener Chip s e m ic o n d u c to r FEATURES • Softens 68HC11-based systems - Converts up to 64K bytes of CMOS RAM into lithium-backed NV program/data storage - Serial bootstrap loading - In-system program changes adapt HC11 to task

HM65V8512LFP15V

Abstract: M65V8512
Contextual Info: 3.0 V & 3.3 V Supply HM65V8512 Series 524288-Word X 8-Bit High Speed Pseudo Static RAM Ordering Information Description Type No. Access tim e H M65V8512DFP-12 120 ns H M65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns