Untitled
Abstract: No abstract text available
Text: January 1992 Semiconductor & DM93S46 High-Speed 6-Bit Identity Comparator General Description The DM93S46 is a very high speed 6-bit identity compara tor. The device compares two words of up to six bits and indicates identity in less than 12 ns. It is easily expandable
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93S46
DM93S46
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93S46
Abstract: 93s46 8 pin
Text: January 1992 DM93S46 High-Speed 6-Bit Identity Comparator General Description The DM93S46 is a very high speed 6-bit identity compara tor. The device compares two words of up to six bits and indicates identity in less than 12 ns. It is easily expandable
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93S46
DM93S46
93s46 8 pin
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a13b 5 pin
Abstract: A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin
Text: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES IDTAMB0480 PRODUCT BRIEF FEATURES: DESCRIPTION: • • • • • The fully buffered dual in-line memory module FB-DIMM is the next
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IDTAMB0480
AMB0480xxRJ8
AMB0480xxRJ
AMB0480xxRH8
AMB0480xxRH
a13b 5 pin
A13B
AMB0480
diode A14A
IDTAMB0480
DDR2-533
DDR2-667
ADVANCED COMMUNICATION DEVICES
A12A
a12b 5 pin
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Untitled
Abstract: No abstract text available
Text: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES DESCRIPTION: FEATURES: Advanced Memory Buffer for Fully buffered DIMMs 3.2 and 4 Gbit/s serial speeds DDR2-533 and 667 DRAM
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IDTAMB0480
DDR2-533
AMB0480xxRJ8
AMB0480xxRJ
AMB0480xxRH8
AMB0480xxRH
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A13B
Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
Text: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits
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AS9C25512M2018L
19-bit
A13B
DQ17A-DQ0A
A14B
DQ4a
DQ11A
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DQ20A
Abstract: A17a DQ18A be2a A13B
Text: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits
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AS9C25256M2036L
18Gbps
18-bit
DQ20A
A17a
DQ18A
be2a
A13B
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A17a
Abstract: a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A
Text: September 2004 Preliminary Information AS9C25512M2018L AS9C25256M2018L 2.5V 512/256K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288/262,144 x 18[1]
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AS9C25512M2018L
AS9C25256M2018L
512/256K
A17a
a17b
A18B-A0B
diode A14A
A14A
A15A
A16A
AS9C25256M2018L
AS9C25512M2018L
DQ17A
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A17A
Abstract: A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b
Text: September 2004 Preliminary Information AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1]
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AS9C25256M2036L
AS9C25128M2036L
256/128K
18Gbps
A17A
A15A
a17b
diode A14A
A11A
A13A
A14A
AS9C25128M2036L
AS9C25256M2036L
be0b
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DQ25A
Abstract: DQ20A DQ18A
Text: SG578288FG8SZUU April 27, 2006 Ordering Information Part Numbers Description Module Speed SG578288FG8SZDG 128Mx78 80 * (1GB), DDR2, 244-pin Mini-DIMM,Unbuffered, ECC, 2-Channel (128Mx39 (40), 512MB per Channel), 64Mx8 Based, DDR2-533-444, 36.83mm, 3Ω DQ termination, Green
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SG578288FG8SZUU
SG578288FG8SZDG
128Mx78
244-pin
128Mx39
512MB
64Mx8
DDR2-533-444,
PC2-4200
SG578288FG8SZIL
DQ25A
DQ20A
DQ18A
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A12B
Abstract: A14B a17b DS1280 A10B A11B A13B DS1280FP-80
Text: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for
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DS1280
68-pin
80-pin
DS1280FP-XX
44-pin
A12B
A14B
a17b
DS1280
A10B
A11B
A13B
DS1280FP-80
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dallas ds1280
Abstract: A12B A18B a17b DS1280 A10B A11B A13B DS1280FP-80
Text: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for
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DS1280
68-pin
80-pin
DS1280FP-XX
44-pin
dallas ds1280
A12B
A18B
a17b
DS1280
A10B
A11B
A13B
DS1280FP-80
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DS1280s
Abstract: dallas ds1280
Text: DS1280 DS1280 DALLAS SEMICONDUCTOR 3-Wire to Bytewide Converter Chip FEATURES PIN CONNECTIONS • Adapts JEDEC bytewide memory to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for dual port operation
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DS1280
68-pin
80-pin
A11BC
A12BC
A13RC
A14RC
A14BC
A15BC
DS1280s
dallas ds1280
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ATT7C314J
Abstract: No abstract text available
Text: iATsT Data Sheet November 1991 rMicroelectronics A TT7C 314J S ta tic , D u al-P o rt RAM 72K 8192 w ords x 9 b its Benefits Features • Full internal contention resolution transparent to the user ■ Word-size expansion capability ■ Parity bit available with 9-bit organization
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ATT7C31ample,
ATT7C314J
68-Pin
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SN10
Abstract: SN13 a12b
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 2Gb 1st ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
HMP41GF7MMP4C
D0/D18
D1/D19
D2/D20
D3/D21
D4/D22
D5/D23
D6/D24
D7/D25
SN10
SN13
a12b
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SN10
Abstract: SN13 "Raw Card J" DDR DIMM 512m non-ecc SPD
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb 1st ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that isolates the DDR2
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240pin
1240pin
SN10
SN13
"Raw Card J"
DDR DIMM 512m non-ecc SPD
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HYMP351F72AMP4D2-C4
Abstract: A13A dram card 60 SN10 SN13 hymp351f72amp4d2 DDR DIMM 512m non-ecc SPD DDR2 DIMM
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
512Mx72,
HYMP351F72AMP4
HYMP351F72AMP4D2-C4
A13A
dram card 60
SN10
SN13
hymp351f72amp4d2
DDR DIMM 512m non-ecc SPD
DDR2 DIMM
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NEC A15A
Abstract: dram card 60 SN13
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
512Mx72,
HYMP351F72AMP4
NEC A15A
dram card 60
SN13
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Untitled
Abstract: No abstract text available
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb E-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
512Mx72,
HMP151F7EFR4C
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Untitled
Abstract: No abstract text available
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb B-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
256Mx72,
HYMP525F72BP4
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hynix DDR2 800 1GB SO DIMM
Abstract: HMP564F7FFP8C
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
256Mx72,
HMP525F7FFP4C
hynix DDR2 800 1GB SO DIMM
HMP564F7FFP8C
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SSTV16857
Abstract: DDR 333 pc2700 RDIMM PC2100 SN74SSTV32867 SN74SSTV32877 SN74SSTVF16857 SSTVF16857 a2b 340
Text: Application Report SCEA031 - January 2003 Application of the SN74SSTVF16857 in Planar PC2700 DDR-333 RDIMMs Tomdio Nana and Roland Pang Standard Linear & Logic ABSTRACT The high-capacity memory modules used in servers and workstations present a complex load to the memory controller used in these high-reliability, high-performance systems. To
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SCEA031
SN74SSTVF16857
PC2700
DDR-333)
SSTV168reproduction
SSTV16857
DDR 333
pc2700
RDIMM
PC2100
SN74SSTV32867
SN74SSTV32877
SN74SSTVF16857
SSTVF16857
a2b 340
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HYMP151L72CP4
Abstract: No abstract text available
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb C-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
512Mx72,
HYMP151L72CP4D5
HYMP151L72CP4
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Untitled
Abstract: No abstract text available
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
256Mx72,
HMP525F7FFP4C
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Untitled
Abstract: No abstract text available
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb B-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
256Mx72,
HYMP525F72BP4
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